STS7DNH3LL vs BSC0901NSATMA1 Perbandingan

Perbandingan bersamaan detil STS7DNH3LL dari STMicroelectronics dan BSC0901NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum STS7DNH3LL BSC0901NSATMA1
Merek STMicroelectronics Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer STMicroelectronics Infineon Technologies
Product Type Dual N-Channel Power MOSFET —
Technology STripFET III (trench gate) N-Channel Trench MOSFET (OptiMOS)
Drain-to-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) 7 A per channel —
On-Resistance RDS(on) typ. 0.018 Ω at VGS = 10 V —
Gate-to-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Paket SO-8 TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm
Tipe Mounting Surface Mount Surface Mount
Suhu Hubung Kerja -55 °C to +175 °C —
Power Dissipation (per channel) [DATA_NEEDED: PD per channel] —
Channel Count 2 (Dual) —
Channel Polarity N-Channel —
Status RoHS Compliant Compliant
Lead-Free Yes —
Part Family — OptiMOS 30V
Drain-to-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) at Tc — 100 A
Continuous Drain Current (ID) at Ta — 28 A
On-State Resistance RDS(on) Max at VGS=10V — 1.9 mOhm
On-State Resistance RDS(on) Typ at VGS=10V — [DATA_NEEDED: RDS(on) typical]
Gate Charge (Qg) Typ — [DATA_NEEDED: Qg total]
Avalanche Energy (EAS) — 80 mJ
Power Dissipation (PD) at Tc — 69 W
Power Dissipation (PD) at Ta — 2.5 W
Rentang Suhu Kerja — -55C to +150C
Tingkat Sensitivitas Kekeringan (MSL) — 1
Built-in Body Diode — Yes
Configuration — Single N-Channel with Built-in Diode

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon