STS7DNH3LL vs BSC0901NSATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma STS7DNH3LL tarafından STMicroelectronics ve BSC0901NSATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
STMicroelectronics
STS7DNH3LL - Dual N-Channel 30V MOSFET, 0.018Ω, 7A | STMicroelectronics
STS7DNH3LL ✓ Aktif
Özellik Karşılaştırması
| Parametre | STS7DNH3LL | BSC0901NSATMA1 |
|---|---|---|
| Marka | STMicroelectronics | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | STMicroelectronics | Infineon Technologies |
| Product Type | Dual N-Channel Power MOSFET | — |
| Technology | STripFET III (trench gate) | N-Channel Trench MOSFET (OptiMOS) |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) | 7 A per channel | — |
| On-Resistance RDS(on) typ. | 0.018 Ω at VGS = 10 V | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Paket | SO-8 | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm |
| Montaj Türü | Surface Mount | Surface Mount |
| İşletim Jant Sıcaklığı | -55 °C to +175 °C | — |
| Power Dissipation (per channel) | [DATA_NEEDED: PD per channel] | — |
| Channel Count | 2 (Dual) | — |
| Channel Polarity | N-Channel | — |
| RoHS Durumu | Compliant | Compliant |
| Lead-Free | Yes | — |
| Part Family | — | OptiMOS 30V |
| Drain-to-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Continuous Drain Current (ID) at Ta | — | 28 A |
| On-State Resistance RDS(on) Max at VGS=10V | — | 1.9 mOhm |
| On-State Resistance RDS(on) Typ at VGS=10V | — | [DATA_NEEDED: RDS(on) typical] |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg total] |
| Avalanche Energy (EAS) | — | 80 mJ |
| Power Dissipation (PD) at Tc | — | 69 W |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| İşletim Sıcaklığı Aralığı | — | -55C to +150C |
| Nem Hassasiyet Seviyesi (MSL) | — | 1 |
| Built-in Body Diode | — | Yes |
| Configuration | — | Single N-Channel with Built-in Diode |