TJ60S06M3L vs TJ60S06M3LT6L1.NQ Perbandingan
Perbandingan bersamaan detil TJ60S06M3L dari Toshiba dan TJ60S06M3LT6L1.NQ dari Toshiba. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Toshiba
TJ60S06M3L(T6L1,NQ - P-Ch -60V -60A 11.2mOhm DPAK+ MOSFET | Toshiba
TJ60S06M3LT6L1.NQ ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | TJ60S06M3L | TJ60S06M3LT6L1.NQ |
|---|---|---|
| Merek | Toshiba | Toshiba |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | P-channel |
| Technology | U-MOSVI (Trench MOSFET) | Toshiba U-MOS (silicon) |
| Drain-Source Voltage (VDS) | -60 V | -60 V |
| Continuous Drain Current (ID) | -60 A (Tc) | — |
| Power Dissipation (PD) | 100 W (Tc) | — |
| On-State Resistance (RDS(on)) | 11.2 mΩ (typ.) at VGS = -10 V | — |
| Gate-Source Threshold Voltage (Vth) | -3.0 V (typ.) at VDS = -1 mA | — |
| Drain Leakage Current (IDSS) | -10 µA (max) at VDS = -40 V | — |
| Input Capacitance (Ciss) | 7760 pF (typ.) | 7760 pF |
| Paket | DPAK+ (TO-252-3 surface-mount) | DPAK+ (TO-252) |
| Rentang Suhu Kerja | [DATA_NEEDED: -55C to +175C assumed, confirm via datasheet] | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Lead-Free / RoHS | RoHS compliant | — |
| Automotive Grade | AEC-Q101 qualified (LJ suffix: TJ60S06M3L,LXHQ) | — |
| Manufacturer | Toshiba Electronic Devices & Storage | — |
| Cell Technology | Trench (enhancement mode) | — |
| Gate-Source Voltage (VGS) | — | +10 V / -20 V |
| Continuous Drain Current (ID) at TC=25C | — | -60 A |
| Power Dissipation (PD) at TC=25C | — | 100 W |
| RDS(on) Max at VGS=-10V | — | 0.0112 ohm |
| FET Type | — | MOSFET P-Channel, Metal Oxide |
| Suhu Kerja | — | -55C to +150C (Tj) |
| Level MSL | — | 1 (unlimited) |
| Status RoHS | — | Compliant |
| Automotive Qualified | — | Yes (per Toshiba product positioning) |