TJ60S06M3L vs TJ60S06M3LT6L1.NQ 比較
詳細並排比較 TJ60S06M3L 由 Toshiba 與 TJ60S06M3LT6L1.NQ 由 Toshiba. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | TJ60S06M3L | TJ60S06M3LT6L1.NQ |
|---|---|---|
| 品牌 | Toshiba | Toshiba |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity | P-Channel | P-channel |
| Technology | U-MOSVI (Trench MOSFET) | Toshiba U-MOS (silicon) |
| Drain-Source Voltage (VDS) | -60 V | -60 V |
| Continuous Drain Current (ID) | -60 A (Tc) | — |
| Power Dissipation (PD) | 100 W (Tc) | — |
| On-State Resistance (RDS(on)) | 11.2 mΩ (typ.) at VGS = -10 V | — |
| Gate-Source Threshold Voltage (Vth) | -3.0 V (typ.) at VDS = -1 mA | — |
| Drain Leakage Current (IDSS) | -10 µA (max) at VDS = -40 V | — |
| Input Capacitance (Ciss) | 7760 pF (typ.) | 7760 pF |
| 封裝 | DPAK+ (TO-252-3 surface-mount) | DPAK+ (TO-252) |
| 工作溫度範圍 | [DATA_NEEDED: -55C to +175C assumed, confirm via datasheet] | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Lead-Free / RoHS | RoHS compliant | — |
| Automotive Grade | AEC-Q101 qualified (LJ suffix: TJ60S06M3L,LXHQ) | — |
| Manufacturer | Toshiba Electronic Devices & Storage | — |
| Cell Technology | Trench (enhancement mode) | — |
| Gate-Source Voltage (VGS) | — | +10 V / -20 V |
| Continuous Drain Current (ID) at TC=25C | — | -60 A |
| Power Dissipation (PD) at TC=25C | — | 100 W |
| RDS(on) Max at VGS=-10V | — | 0.0112 ohm |
| FET Type | — | MOSFET P-Channel, Metal Oxide |
| 工作溫度 | — | -55C to +150C (Tj) |
| MSL 等級 | — | 1 (unlimited) |
| RoHS 狀態 | — | Compliant |
| Automotive Qualified | — | Yes (per Toshiba product positioning) |