TJ60S06M3L vs TJ60S06M3LT6L1.NQ Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci TJ60S06M3L disebabkan oleh Toshiba dan TJ60S06M3LT6L1.NQ disebabkan oleh Toshiba. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Toshiba
TJ60S06M3L(T6L1,NQ - P-Ch -60V -60A 11.2mOhm DPAK+ MOSFET | Toshiba
TJ60S06M3LT6L1.NQ ✓ AktifPengandingan Spesifikasi
| Parametr | TJ60S06M3L | TJ60S06M3LT6L1.NQ |
|---|---|---|
| Merek | Toshiba | Toshiba |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | P-channel |
| Technology | U-MOSVI (Trench MOSFET) | Toshiba U-MOS (silicon) |
| Drain-Source Voltage (VDS) | -60 V | -60 V |
| Continuous Drain Current (ID) | -60 A (Tc) | — |
| Power Dissipation (PD) | 100 W (Tc) | — |
| On-State Resistance (RDS(on)) | 11.2 mΩ (typ.) at VGS = -10 V | — |
| Gate-Source Threshold Voltage (Vth) | -3.0 V (typ.) at VDS = -1 mA | — |
| Drain Leakage Current (IDSS) | -10 µA (max) at VDS = -40 V | — |
| Input Capacitance (Ciss) | 7760 pF (typ.) | 7760 pF |
| Kemasan | DPAK+ (TO-252-3 surface-mount) | DPAK+ (TO-252) |
| Gambaran Suhu Operasi | [DATA_NEEDED: -55C to +175C assumed, confirm via datasheet] | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Lead-Free / RoHS | RoHS compliant | — |
| Automotive Grade | AEC-Q101 qualified (LJ suffix: TJ60S06M3L,LXHQ) | — |
| Manufacturer | Toshiba Electronic Devices & Storage | — |
| Cell Technology | Trench (enhancement mode) | — |
| Gate-Source Voltage (VGS) | — | +10 V / -20 V |
| Continuous Drain Current (ID) at TC=25C | — | -60 A |
| Power Dissipation (PD) at TC=25C | — | 100 W |
| RDS(on) Max at VGS=-10V | — | 0.0112 ohm |
| FET Type | — | MOSFET P-Channel, Metal Oxide |
| Suhu Operasi | — | -55C to +150C (Tj) |
| Aras MSL | — | 1 (unlimited) |
| Status RoHS | — | Compliant |
| Automotive Qualified | — | Yes (per Toshiba product positioning) |