TJ60S06M3L vs TJ60S06M3LT6L1.NQ Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng TJ60S06M3L sa pamamagitan ng Toshiba at TJ60S06M3LT6L1.NQ sa pamamagitan ng Toshiba. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro TJ60S06M3L TJ60S06M3LT6L1.NQ
Brand Toshiba Toshiba
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity P-Channel P-channel
Technology U-MOSVI (Trench MOSFET) Toshiba U-MOS (silicon)
Drain-Source Voltage (VDS) -60 V -60 V
Continuous Drain Current (ID) -60 A (Tc) —
Power Dissipation (PD) 100 W (Tc) —
On-State Resistance (RDS(on)) 11.2 mΩ (typ.) at VGS = -10 V —
Gate-Source Threshold Voltage (Vth) -3.0 V (typ.) at VDS = -1 mA —
Drain Leakage Current (IDSS) -10 µA (max) at VDS = -40 V —
Input Capacitance (Ciss) 7760 pF (typ.) 7760 pF
Packhaging DPAK+ (TO-252-3 surface-mount) DPAK+ (TO-252)
Hanay ng Temperature na Operasyon [DATA_NEEDED: -55C to +175C assumed, confirm via datasheet] —
Uri ng Pagpapasok Surface Mount Surface Mount
Lead-Free / RoHS RoHS compliant —
Automotive Grade AEC-Q101 qualified (LJ suffix: TJ60S06M3L,LXHQ) —
Manufacturer Toshiba Electronic Devices & Storage —
Cell Technology Trench (enhancement mode) —
Gate-Source Voltage (VGS) — +10 V / -20 V
Continuous Drain Current (ID) at TC=25C — -60 A
Power Dissipation (PD) at TC=25C — 100 W
RDS(on) Max at VGS=-10V — 0.0112 ohm
FET Type — MOSFET P-Channel, Metal Oxide
Temperature na Operasyon — -55C to +150C (Tj)
Level ng MSL — 1 (unlimited)
Tindminan RoHS — Compliant
Automotive Qualified — Yes (per Toshiba product positioning)

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