TLF11251LDXUMA1 vs 1EDN7126GXTMA1 Perbandingan

Perbandingan bersamaan detil TLF11251LDXUMA1 dari Infineon dan 1EDN7126GXTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum TLF11251LDXUMA1 1EDN7126GXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Half-Bridge Gate Driver Single-channel TDI gate driver for GaN HEMT and Si MOSFET
Konfigurasi Output Half-Bridge (1 high-side + 1 low-side) —
Tipe Output Non-Inverting —
Peak Output Current 2.5 A (source/sink) —
Waktu naik 60 ns (typical) —
Waktu Menurun 60 ns (typical) —
Supply Voltage Range 3.5 V to 7 V —
Number of Drivers 1 (half-bridge) —
Input Logic Compatibility CMOS / TTL (non-inverting) 3.3 V / 5 V TTL/CMOS (TDI)
Suhu Kerja -40 C to +125 C (AEC-Q100 Grade 1) —
Paket PG-TSON-10-2 (10-pin TSON with exposed pad) PG-VSON-10-4
Tipe Mounting Surface Mount Surface Mount
Level MSL [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
Automotive Qualification AEC-Q100 —
Status RoHS Compliant Compliant
Protection Features Shoot-through protection, UVLO —
Configuration — Non-Inverting
Channel Type — Single
Driven Supply Voltage — [DATA_NEEDED: VCC max value]
Peak Source Current — 1.5 A
Peak Sink Current — 1.5 A
Common-Mode Voltage (CMR) — 200 V
Input Type — Truly Differential Input (TDI)
Propagation Delay (Typ.) — [DATA_NEEDED: tpd typical value]
Rise / Fall Time (Typ.) — [DATA_NEEDED: tr / tf typical value]
Rentang Suhu Kerja — -40C to +125C
Reach — Compliant
Lead-Free — Yes

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