TLF11251LDXUMA1 vs 1EDN7126GXTMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci TLF11251LDXUMA1 disebabkan oleh Infineon dan 1EDN7126GXTMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr TLF11251LDXUMA1 1EDN7126GXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Half-Bridge Gate Driver Single-channel TDI gate driver for GaN HEMT and Si MOSFET
Konfigurasi Output Half-Bridge (1 high-side + 1 low-side) —
Jenis Output Non-Inverting —
Peak Output Current 2.5 A (source/sink) —
Masa Pertambahan 60 ns (typical) —
Masa jatuh 60 ns (typical) —
Supply Voltage Range 3.5 V to 7 V —
Number of Drivers 1 (half-bridge) —
Input Logic Compatibility CMOS / TTL (non-inverting) 3.3 V / 5 V TTL/CMOS (TDI)
Suhu Operasi -40 C to +125 C (AEC-Q100 Grade 1) —
Kemasan PG-TSON-10-2 (10-pin TSON with exposed pad) PG-VSON-10-4
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
Automotive Qualification AEC-Q100 —
Status RoHS Compliant Compliant
Protection Features Shoot-through protection, UVLO —
Configuration — Non-Inverting
Channel Type — Single
Driven Supply Voltage — [DATA_NEEDED: VCC max value]
Peak Source Current — 1.5 A
Peak Sink Current — 1.5 A
Common-Mode Voltage (CMR) — 200 V
Input Type — Truly Differential Input (TDI)
Propagation Delay (Typ.) — [DATA_NEEDED: tpd typical value]
Rise / Fall Time (Typ.) — [DATA_NEEDED: tr / tf typical value]
Gambaran Suhu Operasi — -40C to +125C
Reach — Compliant
Lead-Free — Yes

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