TLF11251LDXUMA1 vs 1EDN7126GXTMA1 比較

詳細並排比較 TLF11251LDXUMA1 由 Infineon 與 1EDN7126GXTMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 TLF11251LDXUMA1 1EDN7126GXTMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
功能 Half-Bridge Gate Driver Single-channel TDI gate driver for GaN HEMT and Si MOSFET
輸出配置 Half-Bridge (1 high-side + 1 low-side) —
輸出類型 Non-Inverting —
Peak Output Current 2.5 A (source/sink) —
上升時間 60 ns (typical) —
下降時間 60 ns (typical) —
Supply Voltage Range 3.5 V to 7 V —
Number of Drivers 1 (half-bridge) —
Input Logic Compatibility CMOS / TTL (non-inverting) 3.3 V / 5 V TTL/CMOS (TDI)
工作溫度 -40 C to +125 C (AEC-Q100 Grade 1) —
封裝 PG-TSON-10-2 (10-pin TSON with exposed pad) PG-VSON-10-4
安裝類型 Surface Mount Surface Mount
MSL 等級 [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
Automotive Qualification AEC-Q100 —
RoHS 狀態 Compliant Compliant
Protection Features Shoot-through protection, UVLO —
Configuration — Non-Inverting
Channel Type — Single
Driven Supply Voltage — [DATA_NEEDED: VCC max value]
Peak Source Current — 1.5 A
Peak Sink Current — 1.5 A
Common-Mode Voltage (CMR) — 200 V
Input Type — Truly Differential Input (TDI)
Propagation Delay (Typ.) — [DATA_NEEDED: tpd typical value]
Rise / Fall Time (Typ.) — [DATA_NEEDED: tr / tf typical value]
工作溫度範圍 — -40C to +125C
Reach — Compliant
Lead-Free — Yes

資料表與資源

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