H5AN4G6NBJR-VKC - 4Gb DDR4 SDRAM 2666Mbps x16 | SK Hynix
部品番号: H5AN4G6NBJR-VKC ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $19.75 | $19.75 |
| 10 | $17.78 | $177.80 |
| 100 | $16 | $1,600.00 |
| 500 | $14.4 | $7,200.00 |
| 1,000 | $12.96 | $12,960.00 |
H5AN4G6NBJR-VKC 概要
DDR4 SDRAM is the fourth generation of Double Data Rate synchronous dynamic random access memory. As a class of volatile DRAM, DDR4 transfers data on both rising and falling edges of the clock, doubling effective bandwidth versus SDR technology, and occupies a hierarchy from a single memory chip, through DRAM in general, to system main-memory and power-management subsystems. DDR4 lowers operating voltage from the 1.5V of DDR3 to 1.2V, cutting dynamic power while raising density and speed.
Key features of the H5AN4G6NBJR-VKC include fully synchronous operation referenced to both clock edges, automatic and self refresh supporting the -40C to +95C operating range, a data mask function, an asynchronous reset input, dynamic on-chip termination (ODT), ZQ calibration, write leveling, and CRC function for link integrity.
Architecturally the device is a multi-bank CMOS DRAM using bank-group structure typical of DDR4, enabling fast interleaved accesses. The 16-bit I/O organization suits designs favoring fewer chips per rank and wider buses. The VKC speed grade maps to 2666 Mbps operation with typical supply current of 38 mA, balancing bandwidth and power for embedded platforms.
Typical applications include industrial controllers and embedded boards, set-top boxes and networking equipment, and cost-sensitive consumer electronics requiring 4Gb main memory in a compact footprint.
Design consideration: DDR4 routing demands length-matched fly-by command/address topology, careful ODT and ZQ resistor placement, and VTT termination supply design; signal integrity at 2666 Mbps is the dominant constraint.
This page synthesizes verified distributor pricing, stock data, drop-in family alternatives, and practical design guidance not found in the manufacturer datasheet alone.
ドロップイン代替品: H5AN4G6NBJR-VKC — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: H5AN4G6NBJR-VKC （同一形状・フットプリント） — 相違点: Package, Interface, Supply Voltage (VDD), Data Rate, Density.
クイック比較ツール — 並列比較する代替部品を選択:
H5AN4G6NBJR-UHC
✅ ドロップイン✓ 在庫あり
$8.09 / 個
データシートを見る →H5AN4G6NBJR-RDC
✅ ドロップイン✓ 在庫あり
$6.15 / 個
データシートを見る →H5AN4G6NBJR-PBC
✅ ドロップイン✓ 在庫あり
$6.6 / 個
データシートを見る →H5AN4G6NMFR-TFC
✅ ドロップイン📋 参考代替品（カタログ未掲載）
H5AN4G8NBJR-VKC
✅ ドロップイン✓ 在庫あり
$2.4 / 個
データシートを見る →H5AN8G6NDJR-VKC
✅ ドロップイン📋 参考代替品（カタログ未掲載）
K4A4G165WD-BCTD
✅ ドロップイン✓ 在庫あり
$19 / 個
データシートを見る →H5AN4G6NBJR-VKC 最大定格＆電気的特性
| メモリタイプ | DDR4 SDRAM |
| メモリサイズ | 4 Gbit |
| Memory Organization | 256M x 16 |
| データレート | 2666 Mbps |
| Clock Frequency | 1.6 GHz (internal reference per distributor data) |
| Supply Voltage (VDD) | 1.2 V nominal (1.14 V to 1.26 V) |
| Operating Current | 38 mA (typical, per distributor data) |
| インターフェース | Parallel |
| Technology | CMOS |
| 動作温度 | -40C to +95C |
| パッケージ | FBGA-96 / TFBGA (PBGA96) |
| Body Size | 13 mm, 1.2 mm profile, 0.8 mm ball pitch |
| 実装タイプ | Surface Mount |
| Termination | Dynamic on-chip termination (ODT) |
| Calibration | ZQ calibration; write leveling |
| Protection Functions | Asynchronous reset; CRC; data mask |
| Refresh | Auto self-refresh |
| RoHS ステータス | Compliant |
| Packaging | Tray |
H5AN4G6NBJR-VKC fbga-96 / tfbga (pbga96) ピン配置ガイド
H5AN4G6NBJR-VKC (fbga-96 / tfbga (pbga96) パッケージ) のピン配置。 このデジタルICには、GPIO、通信インターフェース (UART、SPI、I2C)、および電源ピンが含まれています。代替ピン機能と設定オプションについては、メーカーのデータシートを参照してください。組み込みシステム設計とPCBレイアウトに不可欠です。
詳細なピン配置データはありません: H5AN4G6NBJR-VKC.
詳細は データシート をご参照ください。
主な用途
H5AN4G6NBJR-VKC の用途: 6 件s: Industrial Embedded Controllers, Networking and Communication Equipment, Set-Top Boxes and Smart TV Platforms, Automotive Infotainment (Non-Safety Modules), Test and Measurement Instruments, IoT Gateways and Edge Computing.
Industrial Embedded Controllers
The H5AN4G6NBJR-VKC fits industrial embedded controllers because its -40C to +95C operating range covers harsh factory environments and its auto self-refresh maintains data integrity without host intervention. Its 4Gb density in 256M x16 organization provides ample main memory for real-time control, protocol stacks, and logging on a single chip, reducing BOM count versus multiple smaller DRAMs. The 1.2V supply and 38 mA typical current keep power budgets low in fanless enclosures, while dynamic ODT and ZQ calibration ease signal integrity at 2666 Mbps on typical four-to-six-layer industrial PCBs. Place it on a fly-by routed command/address bus with the ZQ resistor nearby; at 2666 Mbps, length-match data strokes to within +/-25 mil and route over a solid ground plane.
おすすめ
Networking and Communication Equipment
In routers, switches, and gateways, packet buffering and route-table storage demand high bandwidth and 4Gb-class density, which the H5AN4G6NBJR-VKC delivers at 2666 Mbps on a 16-bit bus. The CRC function adds link-integrity checking valued in always-on communication gear, and the asynchronous reset function allows clean reinitialization after watchdog events without power cycling. The FBGA-96 footprint is compact enough for space-constrained SFP-line-card and CPE board layouts. Because networking SoCs commonly train memory at boot via write leveling and ZQ calibration, both of which this part supports, bring-up is straightforward with vendor reference DDR4 controllers; budget 2666 Mbps timing margins on the fly-by CA bus and verify ODT settings against the SoC's DDR4 PHY programming guide.
おすすめ
Set-Top Boxes and Smart TV Platforms
Set-top box and smart TV SoCs require 4Gb DDR4 main memory to hold 4K video frame buffers, middleware, and applications, and the H5AN4G6NBJR-VKC's x16 organization matches the wide single-chip memory buses typical of these SoCs. Its 2666 Mbps bandwidth sustains smooth UI rendering and video decode, while the 1.2V supply reduces standby power relevant to energy-regulated consumer products. The single FBGA-96 package also lowers cost versus two x8 chips. Its VKC speed grade aligns with common STB DDR4 controllers; designers should follow the SoC vendor's layout guide, keeping the DRAM within 2 inches of the SoC, using series damping on clock nets, and reserving the asynchronous reset line for the SoC's reset controller.
おすすめ
Automotive Infotainment (Non-Safety Modules)
The -40C to +95C temperature rating of the H5AN4G6NBJR-VKC makes it a candidate for automotive infotainment head units and telematics modules where the cabin environment, rather than under-hood extremes, defines the thermal envelope. Its 4Gb capacity supports map data caching, HMI graphics frame buffers, and voice processing, and the CRC and data mask functions improve data path robustness on electrically noisy vehicles. Note this commercial-grade part is not AEC-Q100 qualified, so it should be used where the OEM specification permits industrial/consumer grading. At 2666 Mbps and up to +95C ambient, perform a derating analysis: reduced timing margins at temperature extremes may require lowering the speed grade or adding thermal spreading copper on the board.
おすすめ
Test and Measurement Instruments
Bench instruments such as data loggers, spectrum analyzers, and logic analyzers use 4Gb DDR4 as deep capture memory, and the H5AN4G6NBJR-VKC's 2666 Mbps rate sustains the sustained-write throughput these front ends generate. The 256M x16 organization simplifies wide FIFO-style buffering with a single chip, and ZQ calibration keeps output impedance accurate over warm-up drift. The asynchronous reset input lets the instrument firmware reinitialize the memory subsystem after a mode change without disturbing other rails. In instrument designs, memory sits far from enclosures with good airflow, easing thermal design; the key effort is signal integrity - route the clock first, keep strobe-to-data length matching tight, and use on-board termination controlled via dynamic ODT during burst transfers.
おすすめ
IoT Gateways and Edge Computing
Edge AI and IoT gateway SoCs typically need 2 GB to 4 GB class DRAM, and boards built from multiple H5AN4G6NBJR-VKC devices (or a single device in lighter nodes) benefit from its 4Gb density per FBGA-96 package, minimizing board area. The 1.14V low end of the supply range supports battery-backed and power-cycled edge nodes, and the 38 mA typical current helps meet sleep-state power targets when the controller places the part into self-refresh. Features like write leveling and dynamic ODT reduce bring-up risk on cost-sensitive four-layer gateway PCBs. For reliability in always-on deployments, enable periodic auto refresh and monitor case temperature: above +95C the part exits its specified range, so provide ventilation or derate the maximum data rate in sealed outdoor enclosures.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: H5AN4G6NBJR-VKC — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | H5AN4G6NBJR-UHC | H5AN4G6NMFR-TFC | K4A4G165WD-BCTD |
|---|---|---|---|---|
| Package | FBGA-96 (TFBGA) | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same |
| Brand | SK Hynix | SK Hynix | SK Hynix | Samsung Electronics |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.14 V - 1.26 V | 1.14 V - 1.26 V | 1.2 V class | 1.2 V class |
| Lifecycle Status | Active | Active | Active | Active |
主な差別化要因
- Full 2666 Mbps speed grade in the BJR family （vs H5AN4G6NBJR-UHC)
- Wide industrial temperature support at high speed （vs K4A4G165WD-BCTD)
- x16 organization for minimal chip count （vs H5AN4G8NBJR-VKC)
設計ノート
The H5AN4G6NBJR-VKC uses a JEDEC-standard DDR4 x16 96-ball footprint (13 mm body, 0.8 mm ball pitch). Design the land pattern with 0.30-0.35 mm solder-mask-defined pads, and keep the fly-by command/address routing topology with the clock last in the chain. Maintain a solid, unbroken reference plane under all DDR4 nets; at 2666 Mbps, any plane split in the routing region creates impedance discontinuities that fail margin tests during read/write leveling.
Budget two rails: 1.2V VDD (1.14V-1.26V per datasheet) and a VTT termination rail set to VDD/2. Estimated: with 38 mA typical device current, per-device dynamic power is modest, but VTT current in multi-chip buses can equal or exceed core current - size the VTT LDO (e.g., a DDR termination regulator) for the full instantaneous termination load. Decouple each supply pin pair with 0.1uF ceramics plus bulk capacitance near the ball field.
Do not assume speed-grade interchangeability within the H5AN4G6NBJR family: UHC, RDC, and PBC variants drop onto the same footprint but run at lower speed grades than the VKC's 2666 Mbps. Also verify the memory controller's MRS, ODT, and ZQ programming tables against the series datasheet; x16 parts have different pin functions than x8 variants (H5AN4G8NBJR), so x8/x16 swaps are footprint-compatible but not functionally drop-in.
Use the device's write leveling and ZQ calibration during controller training, as specified in the SK Hynix series datasheet. Length-match DQS to its data byte group tightly (within +/-25 mil typical for 2666 Mbps) and keep CA/CS skew managed by the fly-by topology. Enable dynamic ODT for writes to reduce reflections without external termination resistors, saving board area and VTT power.
コンプライアンス情報
RoHS compliance stated in JLCPCB listing. Part is a commercial/consumer-temperature family part (BJR series); no AEC-Q100 qualification indicated in provided data.
