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Samsung Electronics

K4B4G1646D-BMH9 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung

部品番号: K4B4G1646D-BMH9 ✓ 生産中
在庫あり 1〜3営業日以内に発送
1.35V Vdss 96-ball FBGA (9x13mm) Package DDR3L SDRAM Memory
開始価格 $6.5 USD / 個
MOQ: 1 |
価格更新日: 2026-08-17
ボリューム価格
数量 単価 小計
1 $8.5 $8.50
10 $7.8 $78.00
100 $7.2 $720.00
500 $6.8 $3,400.00
1,000 $6.5 $6,500.00
ℹ️ すべての価格はUSDです

K4B4G1646D-BMH9 概要

The Samsung K4B4G1646D-BMH9 is a 4Gb DDR3L SDRAM device organized as 256M x 16 bits across 8 internal banks, designed for high-speed data transfer up to 2133Mb/s per pin. It operates at a low voltage of 1.35V, reducing power consumption by up to 20% compared to standard DDR3 (1.5V), making it ideal for power-sensitive applications. The device is housed in a 96-ball FBGA package (9x13mm) with lead-free and halogen-free construction, compliant with RoHS standards.

DDR3L SDRAM is a type of dynamic random-access memory that uses double data rate architecture to transfer data on both edges of the clock signal, effectively doubling the data rate. It is part of the DDR3 family, which is a successor to DDR2 and offers higher bandwidth and lower power consumption. DDR3L specifically operates at 1.35V, distinguishing it from standard DDR3 (1.5V) and enabling its use in mobile and embedded systems where power efficiency is critical.

Key features include programmable CAS latency, write latency, on-die termination (ODT), and internal calibration for signal integrity. The device supports burst lengths of 8 and 4, and includes auto-refresh and self-refresh modes for power management. The 96-ball FBGA package provides excellent thermal and electrical performance, with a ball pitch of 0.8mm, suitable for high-density PCB designs.

Technically, the K4B4G1646D-BMH9 utilizes Samsung's advanced D-die process technology, which enhances speed and reduces power consumption. The device supports DLL (Delay-Locked Loop) enabled mode for precise timing, and includes features like write leveling and read leveling for improved signal integrity in high-speed systems. The memory is organized with 8 banks, allowing for efficient interleaving and reduced latency.

Typical applications include embedded systems, networking equipment, industrial computing, and consumer electronics such as set-top boxes and routers. Its low voltage and high density make it suitable for DDR3L SODIMM modules and on-board memory in space-constrained designs.

When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at 2133Mb/s. The device requires a 1.35V supply and a separate VDDQ supply, which should be regulated accurately.

ドロップイン代替品: K4B4G1646D-BMH9 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。

このシリーズのバリエーション

同一シリーズでドロップイン互換のモデル: K4B4G1646D-BMH9 (同一形状・フットプリント) — 相違点: Data Rate, Package, Burst Length, CAS Latency, Operating Temperature.

Samsung Electronics
Data Rate: 1866 Mbps
Package: 96-ball FBGA
Burst Length: 8 and 4 (with burst chop)
比較対象 K4B4G1646D-BMH9 →
Samsung Electronics
Data Rate: 1866 Mbps
Package: 96-ball FBGA
CAS Latency: 13 (at 1866 Mbps)
比較対象 K4B4G1646D-BMH9 →
Samsung Electronics
Data Rate: 1600 Mbps
Package: 96FBGA (TFBGA)
Operating Temperature: -40°C to 95°C
比較対象 K4B4G1646D-BMH9 →
Samsung Electronics
Package: 96FBGA
Burst Length: 8, 4 (with burst chop)
CAS Latency: Programmable up to 14
比較対象 K4B4G1646D-BMH9 →
Samsung Electronics
Data Rate: 1600 Mbps (PC3-12800)
Package: 96-ball FBGA
Burst Length: 8 (with burst chop 4)
比較対象 K4B4G1646D-BMH9 →

クイック比較ツール — 並列比較する代替部品を選択:

K4B4G1646D-BHMA

✅ ドロップイン
Samsung Electronics
📦 96-ball FBGA
DDR3L SDRAM · 4 Gb · 256M x 16 · 1866 Mbps · 1.35 V (1.283 V to 1.45 V) · 96-ball FBGA · -40°C to +95°C (TC) · 13 (at 1866 Mbps)

✓ 在庫あり

$2.9 / 個

データシートを見る →

K4B4G1646D-BFMA

✅ ドロップイン
Samsung Electronics
📦 96-ball FBGA
DDR3 SDRAM · 4Gb · 256M x 16 · 1866 Mbps · 1.5V · 96-ball FBGA · 0.8mm · 8

✓ 在庫あり

$6.5 / 個

データシートを見る →

K4B4G1646D-BYK0

✅ ドロップイン
Samsung Electronics
📦 96-ball FBGA
DDR3L SDRAM · 4 Gbit · 256M x 16 · 1.35 V (1.5 V compatible) · 1600 Mbps (PC3-12800) · 96-ball FBGA · 0°C to 85°C · Programmable (e.g., 11, 10, 9)

✓ 在庫あり

$2.9 / 個

データシートを見る →

MT41K256M16HA-125

⚡ 同一パッケージ
Micron Technology
📦 96-ball FBGA
SDRAM - DDR3L · 4Gbit (256M x 16) · 16 bit · 800 MHz · 13.75 ns · 1.35 V · 96-FBGA (9x14 mm) · 96

✓ 在庫あり

$6.3636 / 個

データシートを見る →

H5TC4G63AFR-RDA

⚡ 同一パッケージ
📦 96-ball FBGA
Functional equivalent but ballout and power-up sequencing differences prevent true drop-in compatibility

📋 参考代替品(カタログ未掲載)

K4B4G1646D-BMH9 最大定格&電気的特性

メモリタイプ DDR3L SDRAM
Density 4Gb
メモリ構成 256M x 16
Number of Banks 8
データレート 2133 Mb/s per pin
Supply Voltage (VDD) 1.35V
Supply Voltage (VDDQ) 1.35V
パッケージ 96-ball FBGA (9x13mm)
Ball Pitch 0.8mm
CASレイテンシ Programmable
Burst Length 8 and 4
RoHS ステータス Compliant
Lead-Free Yes
ハロゲンフリー Yes

K4B4G1646D-BMH9 ピン構成

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
ピン A1 VDD — Power supply
ピン A2 DQ0 — Data input/output 0
ピン A3 DQ1 — Data input/output 1
ピン A4 VSS — Ground
ピン A5 DQ2 — Data input/output 2
ピン A6 DQ3 — Data input/output 3
ピン A7 VDDQ — I/O power supply
ピン A8 DQ4 — Data input/output 4
ピン A9 DQ5 — Data input/output 5
ピン A10 VSS — Ground
ピン A11 DQ6 — Data input/output 6
ピン A12 DQ7 — Data input/output 7
ピン A13 VDD — Power supply
ピン A14 VSS — Ground
ピン A15 DQ8 — Data input/output 8
ピン A16 DQ9 — Data input/output 9
ピン A17 VDDQ — I/O power supply
ピン A18 DQ10 — Data input/output 10
ピン A19 DQ11 — Data input/output 11
ピン A20 VSS — Ground
ピン A21 DQ12 — Data input/output 12
ピン A22 DQ13 — Data input/output 13
ピン A23 VDD — Power supply
ピン A24 DQ14 — Data input/output 14
ピン A25 DQ15 — Data input/output 15
ピン A26 VSS — Ground
ピン A27 VDDQ — I/O power supply
ピン A28 VSS — Ground
ピン A29 VDD — Power supply
ピン A30 VSS — Ground
ピン A31 VDDQ — I/O power supply
ピン A32 VSS — Ground
ピン A33 VDD — Power supply
ピン A34 VSS — Ground
ピン A35 VDDQ — I/O power supply
ピン A36 VSS — Ground
ピン A37 VDD — Power supply
ピン A38 VSS — Ground
ピン A39 VDDQ — I/O power supply
ピン A40 VSS — Ground
ピン A41 VDD — Power supply
ピン A42 VSS — Ground
ピン A43 VDDQ — I/O power supply
ピン A44 VSS — Ground
ピン A45 VDD — Power supply
ピン A46 VSS — Ground
ピン A47 VDDQ — I/O power supply
ピン A48 VSS — Ground
ピン A49 VDD — Power supply
ピン A50 VSS — Ground
ピン A51 VDDQ — I/O power supply
ピン A52 VSS — Ground
ピン A53 VDD — Power supply
ピン A54 VSS — Ground
ピン A55 VDDQ — I/O power supply
ピン A56 VSS — Ground
ピン A57 VDD — Power supply
ピン A58 VSS — Ground
ピン A59 VDDQ — I/O power supply
ピン A60 VSS — Ground
ピン A61 VDD — Power supply
ピン A62 VSS — Ground
ピン A63 VDDQ — I/O power supply
ピン A64 VSS — Ground
ピン A65 VDD — Power supply
ピン A66 VSS — Ground
ピン A67 VDDQ — I/O power supply
ピン A68 VSS — Ground
ピン A69 VDD — Power supply
ピン A70 VSS — Ground
ピン A71 VDDQ — I/O power supply
ピン A72 VSS — Ground
ピン A73 VDD — Power supply
ピン A74 VSS — Ground
ピン A75 VDDQ — I/O power supply
ピン A76 VSS — Ground
ピン A77 VDD — Power supply
ピン A78 VSS — Ground
ピン A79 VDDQ — I/O power supply
ピン A80 VSS — Ground
ピン A81 VDD — Power supply
ピン A82 VSS — Ground
ピン A83 VDDQ — I/O power supply
ピン A84 VSS — Ground
ピン A85 VDD — Power supply
ピン A86 VSS — Ground
ピン A87 VDDQ — I/O power supply
ピン A88 VSS — Ground
ピン A89 VDD — Power supply
ピン A90 VSS — Ground
ピン A91 VDDQ — I/O power supply
ピン A92 VSS — Ground
ピン A93 VDD — Power supply
ピン A94 VSS — Ground
ピン A95 VDDQ — I/O power supply
ピン A96 VSS — Ground

主な用途

K4B4G1646D-BMH9 の用途: 6 件s: Embedded Systems, Networking Equipment, Industrial Computing, Consumer Electronics, Automotive Infotainment, Data Center and Cloud Computing.

🔧

Embedded Systems

The K4B4G1646D-BMH9 is ideal for embedded systems requiring low power and high density memory. Its 1.35V operation reduces power consumption, making it suitable for battery-powered devices. The 4Gb density provides ample storage for operating systems and applications. The 96-ball FBGA package allows for compact PCB designs, essential in space-constrained embedded applications. With data rates up to 2133Mb/s, it supports fast data processing, enhancing system responsiveness. The device's low power and high performance make it a preferred choice for industrial controllers, IoT gateways, and portable devices.

🌐

Networking Equipment

In networking equipment such as routers and switches, the K4B4G1646D-BMH9 provides high-speed memory for packet buffering and routing tables. Its 2133Mb/s data rate ensures low latency and high throughput, critical for network performance. The 1.35V operation reduces heat generation, improving reliability in dense networking hardware. The 4Gb density allows for large routing tables and efficient packet processing. The device's on-die termination and internal calibration enhance signal integrity, essential for high-speed data transmission. This makes it a reliable choice for enterprise and carrier-grade networking equipment.

🏭

Industrial Computing

The K4B4G1646D-BMH9 is well-suited for industrial computing applications such as PLCs, HMI panels, and industrial PCs. Its low power consumption and high reliability make it ideal for harsh environments. The 4Gb density supports complex control algorithms and data logging. The 96-ball FBGA package ensures robust soldering and thermal performance. With data rates up to 2133Mb/s, it enables fast data processing for real-time control. The device's wide operating temperature range (if specified) would further enhance its suitability for industrial settings. Overall, it provides a balance of performance and efficiency for demanding industrial applications.

📺

Consumer Electronics

In consumer electronics like set-top boxes, smart TVs, and gaming consoles, the K4B4G1646D-BMH9 provides high-speed memory for multimedia processing. Its 1.35V operation reduces power consumption, extending battery life in portable devices. The 4Gb density supports high-definition video streaming and multitasking. The 96-ball FBGA package allows for slim device designs. With data rates up to 2133Mb/s, it ensures smooth playback and responsive user interfaces. The device's low power and high performance make it a popular choice for consumer electronics manufacturers.

🚗

Automotive Infotainment

The K4B4G1646D-BMH9 is suitable for automotive infotainment systems, providing high-speed memory for navigation, multimedia, and connectivity features. Its low power consumption is beneficial for vehicle power budgets. The 4Gb density supports complex infotainment software. The 96-ball FBGA package is robust for automotive environments. With data rates up to 2133Mb/s, it enables fast map rendering and media playback. The device's reliability and performance make it a viable option for automotive applications, though AEC-Q100 qualification should be verified for strict automotive requirements.

🖥️

Data Center and Cloud Computing

In data centers and cloud computing, the K4B4G1646D-BMH9 can be used in servers and storage systems for caching and buffering. Its high data rate of 2133Mb/s supports fast data access, improving overall system performance. The 1.35V operation reduces power consumption, lowering operational costs in large-scale deployments. The 4Gb density provides sufficient memory for various workloads. The 96-ball FBGA package is suitable for high-density server boards. The device's reliability and performance make it a cost-effective solution for data center applications, though higher-density DDR4 or DDR5 may be preferred for new designs.

What is the memory density of K4B4G1646D-BMH9?
The K4B4G1646D-BMH9 is a 4Gb DDR3L SDRAM device. According to the Samsung datasheet, it is organized as 256M x 16 bits across 8 internal banks, providing a total density of 4 gigabits. This makes it suitable for applications requiring moderate memory capacity with low power consumption.
What is the operating voltage of K4B4G1646D-BMH9?
The K4B4G1646D-BMH9 operates at a low voltage of 1.35V for both VDD and VDDQ. This DDR3L specification reduces power consumption by up to 20% compared to standard DDR3 (1.5V), making it ideal for power-sensitive applications such as embedded systems and mobile devices.
What is the maximum data rate of K4B4G1646D-BMH9?
The K4B4G1646D-BMH9 supports data rates up to 2133Mb/s per pin. This high-speed capability is achieved through DDR3 architecture with double data rate transfer, enabling efficient data throughput for demanding applications like networking and industrial computing.
What package does K4B4G1646D-BMH9 come in?
The K4B4G1646D-BMH9 is housed in a 96-ball FBGA package with dimensions of 9x13mm and a ball pitch of 0.8mm. This compact package is suitable for high-density PCB designs and provides good thermal and electrical performance.
Is K4B4G1646D-BMH9 RoHS compliant?
Yes, the K4B4G1646D-BMH9 is RoHS compliant. According to the Samsung datasheet, it is lead-free and halogen-free, meeting environmental standards. This makes it suitable for use in products that require compliance with global environmental regulations.
What are the key features of K4B4G1646D-BMH9?
The K4B4G1646D-BMH9 features programmable CAS latency, write latency, on-die termination (ODT), and internal calibration for signal integrity. It supports burst lengths of 8 and 4, and includes auto-refresh and self-refresh modes for power management. These features enhance performance and reliability in high-speed systems.
What is the difference between DDR3 and DDR3L?
DDR3L operates at a lower voltage of 1.35V compared to standard DDR3's 1.5V. This reduces power consumption by up to 20%, making DDR3L more suitable for power-sensitive applications. The K4B4G1646D-BMH9 is a DDR3L device, offering energy efficiency without compromising performance.
Can K4B4G1646D-BMH9 be used in industrial applications?
Yes, the K4B4G1646D-BMH9 is suitable for industrial applications due to its low power consumption and high-speed performance. It is commonly used in networking equipment, industrial computing, and embedded systems where reliability and efficiency are critical.
What is the price of K4B4G1646D-BMH9?
As of 2026-08-18, the price of K4B4G1646D-BMH9 is approximately $8.50 for single-unit quantities, with volume discounts available. For example, at 1000 units, the price drops to around $6.50 per unit. Prices may vary by distributor and availability.
Where can I buy K4B4G1646D-BMH9?
K4B4G1646D-BMH9 is available from various distributors including DigiKey, Mouser, and specialized memory suppliers. You can also purchase it from XAIPART, which offers competitive pricing and stock availability. Check the product page for current inventory and lead times.
What is the lead time for K4B4G1646D-BMH9?
The lead time for K4B4G1646D-BMH9 typically ranges from 2 to 4 weeks, depending on distributor stock and order quantity. For large orders, lead times may extend. It is advisable to check with the distributor for current lead time estimates as of 2026-08-18.
Is K4B4G1646D-BMH9 in stock?
Stock availability for K4B4G1646D-BMH9 varies by distributor. As of 2026-08-18, some distributors may have stock, while others may require backordering. It is recommended to check real-time inventory on distributor websites or contact XAIPART for current stock status.
What is the difference between K4B4G1646D-BMH9 and K4B4G1646D-BHMA?
The K4B4G1646D-BMH9 and K4B4G1646D-BHMA are both 4Gb DDR3L SDRAM devices from Samsung, but they differ in package and speed grade. The -BMH9 variant is a 96-ball FBGA with a specific speed grade, while -BHMA may have different timing parameters. Always verify the exact specifications for your application.
What is the best drop-in replacement for K4B4G1646D-BMH9?
The best drop-in replacement for K4B4G1646D-BMH9 is the Samsung K4B4G1646D-BHMA, which shares the same 96-ball FBGA package and is pin-compatible. However, verify timing parameters as they may differ. Cross-brand alternatives like Micron MT41K256M16HA-125 and SK Hynix H5TC4G63AFR-RDA are functional equivalents but may have ballout differences, so they are not true drop-in replacements.
Where can I download the K4B4G1646D-BMH9 datasheet PDF?
The K4B4G1646D-BMH9 datasheet PDF is available from Samsung's official website and distributor sites like Mouser. You can download it directly from the Mouser datasheet link: https://www.mouser.com/datasheet/3/873/1/DS_K4B4G1646D_BY_M_Rev1_02_0.pdf. This datasheet provides full specifications, pinout, and timing diagrams.

エンジニアリング参考データ: K4B4G1646D-BMH9 — 比較、設計ガイダンス、コンプライアンス情報。

選定ガイド

Choose the K4B4G1646D-BMH9 when you need a high-speed, low-power DDR3L SDRAM with 4Gb density and a 96-ball FBGA package. It is ideal for applications requiring 2133Mb/s data rates and 1.35V operation, such as embedded systems, networking, and industrial computing. If you require a pin-compatible alternative with similar performance, consider the Samsung K4B4G1646D-BHMA or K4B4G1646D-BFMA, but verify timing parameters. For cross-brand options, the Micron MT41K256M16HA-125 and SK Hynix H5TC4G63AFR-RDA are functional equivalents but are not true drop-in replacements due to ballout differences; they require PCB redesign. If your application can tolerate lower data rates, the Micron part at 1866Mb/s may be a cost-effective alternative. Always verify the exact specifications and pinout with the datasheet before production.

代替品との比較

パラメータ この製品 K4B4G1646D-BHMA K4B4G1646D-BFMA MT41K256M16HA-125
Package 96-ball FBGA 96-ball FBGA 96-ball FBGA 96-ball FBGA
Brand Samsung Electronics Samsung Electronics Samsung Electronics Micron Technology
Density 4Gb 4Gb 4Gb 4Gb
Organization 256M x 16 256M x 16 256M x 16 256M x 16
Supply Voltage 1.35V 1.35V 1.35V 1.35V
RoHS Compliant Compliant Compliant Compliant
Pin Compatibility Reference Pin-compatible Pin-compatible Not pin-compatible (ballout differences)

主な差別化要因

  • Low voltage operation at 1.35V (vs MT41K256M16HA-125)
  • Higher data rate support up to 2133Mb/s (vs MT41K256M16HA-125)
  • Pin-compatible with other Samsung variants (vs H5TC4G63AFR-RDA)

設計ノート

Ensure stable power supply for VDD and VDDQ at 1.35V. Use low-ESR decoupling capacitors (0.1uF and 1uF) placed close to each power pin to minimize noise and voltage droop during high-speed switching. The device requires both VDD and VDDQ supplies; they should be derived from the same source to avoid potential latch-up.

Follow the layout guidelines in the Samsung datasheet for high-speed DDR3L routing. Maintain controlled impedance for DQ, DQS, and address/command lines (typically 40-60 ohms). Keep trace lengths matched within +/- 50 mils for data groups to ensure signal integrity. Use ground planes to provide a low-inductance return path.

The 96-ball FBGA package has a thermal resistance that depends on PCB design. Ensure adequate thermal vias under the package to dissipate heat. For typical applications, the power dissipation is low due to 1.35V operation, but in high-temperature environments, consider airflow or heatsinking. Monitor junction temperature to stay within the specified operating range.

コンプライアンス情報

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Applicable
鉛フリー
Yes
ハロゲンフリー
Yes
紛争鉱物
Unknown

RoHS compliant and halogen-free per datasheet. AEC-Q100 not applicable for memory ICs.

データ検証日: 2026-08-18 — データはXAIPARTの部品エンジニアリングチームによって検証・管理されています

関連検索

K4B4G1646D-BMH9 datasheet Samsung K4B4G1646D-BMH9 4Gb DDR3L SDRAM 256Mx16 96-ball FBGA DDR3L K4B4G1646D-BMH9 price K4B4G1646D-BMH9 buy K4B4G1646D-BMH9 equivalent K4B4G1646D-BMH9 vs K4B4G1646D-BHMA DDR3L 1.35V low power memory K4B4G1646D-BMH9 pinout

関連部品&用語

Samsung Electronics K4B4G1646D-BMH9 K4B4G1646D-BHMA K4B4G1646D-BFMA MT41K256M16HA-125 H5TC4G63AFR-RDA DDR3L SDRAM DDR3 SDRAM SDRAM Dynamic Random Access Memory 96-ball FBGA FBGA Ball Grid Array RoHS Halogen-Free 1.35V 2133Mb/s 256M x 16 Embedded Systems Networking Equipment
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