K4B4G1646D-BMH9 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
Référence : K4B4G1646D-BMH9 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.8 | $78,00 |
| 100 | $7.2 | $720,00 |
| 500 | $6.8 | $3 400,00 |
| 1 000 | $6.5 | $6 500,00 |
K4B4G1646D-BMH9 Présentation
DDR3L SDRAM is a type of dynamic random-access memory that uses double data rate architecture to transfer data on both edges of the clock signal, effectively doubling the data rate. It is part of the DDR3 family, which is a successor to DDR2 and offers higher bandwidth and lower power consumption. DDR3L specifically operates at 1.35V, distinguishing it from standard DDR3 (1.5V) and enabling its use in mobile and embedded systems where power efficiency is critical.
Key features include programmable CAS latency, write latency, on-die termination (ODT), and internal calibration for signal integrity. The device supports burst lengths of 8 and 4, and includes auto-refresh and self-refresh modes for power management. The 96-ball FBGA package provides excellent thermal and electrical performance, with a ball pitch of 0.8mm, suitable for high-density PCB designs.
Technically, the K4B4G1646D-BMH9 utilizes Samsung's advanced D-die process technology, which enhances speed and reduces power consumption. The device supports DLL (Delay-Locked Loop) enabled mode for precise timing, and includes features like write leveling and read leveling for improved signal integrity in high-speed systems. The memory is organized with 8 banks, allowing for efficient interleaving and reduced latency.
Typical applications include embedded systems, networking equipment, industrial computing, and consumer electronics such as set-top boxes and routers. Its low voltage and high density make it suitable for DDR3L SODIMM modules and on-board memory in space-constrained designs.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at 2133Mb/s. The device requires a 1.35V supply and a separate VDDQ supply, which should be regulated accurately.
Alternatives de remplacement direct pour K4B4G1646D-BMH9 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec K4B4G1646D-BMH9 (même facteur de forme et même empreinte) — différant par Data Rate, Package, Burst Length, CAS Latency, Operating Temperature.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K4B4G1646D-BHMA
✅ Remplacement direct✓ En stock
$2.9 / unité
Voir la fiche technique →K4B4G1646D-BFMA
✅ Remplacement direct✓ En stock
$6.5 / unité
Voir la fiche technique →K4B4G1646D-BYK0
✅ Remplacement direct✓ En stock
$2.9 / unité
Voir la fiche technique →MT41K256M16HA-125
⚡ Même boîtier✓ En stock
$6.3636 / unité
Voir la fiche technique →H5TC4G63AFR-RDA
⚡ Même boîtier📋 Alternative de référence (hors catalogue)
K4B4G1646D-BMH9 Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR3L SDRAM |
| Density | 4Gb |
| Organisation de la mémoire | 256M x 16 |
| Number of Banks | 8 |
| Débit de données | 2133 Mb/s per pin |
| Supply Voltage (VDD) | 1.35V |
| Supply Voltage (VDDQ) | 1.35V |
| Boîtier | 96-ball FBGA (9x13mm) |
| Ball Pitch | 0.8mm |
| Latence CAS | Programmable |
| Burst Length | 8 and 4 |
| Statut RoHS | Compliant |
| Lead-Free | Yes |
| Sans halogène | Yes |
Configuration des broches de K4B4G1646D-BMH9
| Broche A1 | VDD — Power supply |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche A4 | VSS — Ground |
| Broche A5 | DQ2 — Data input/output 2 |
| Broche A6 | DQ3 — Data input/output 3 |
| Broche A7 | VDDQ — I/O power supply |
| Broche A8 | DQ4 — Data input/output 4 |
| Broche A9 | DQ5 — Data input/output 5 |
| Broche A10 | VSS — Ground |
| Broche A11 | DQ6 — Data input/output 6 |
| Broche A12 | DQ7 — Data input/output 7 |
| Broche A13 | VDD — Power supply |
| Broche A14 | VSS — Ground |
| Broche A15 | DQ8 — Data input/output 8 |
| Broche A16 | DQ9 — Data input/output 9 |
| Broche A17 | VDDQ — I/O power supply |
| Broche A18 | DQ10 — Data input/output 10 |
| Broche A19 | DQ11 — Data input/output 11 |
| Broche A20 | VSS — Ground |
| Broche A21 | DQ12 — Data input/output 12 |
| Broche A22 | DQ13 — Data input/output 13 |
| Broche A23 | VDD — Power supply |
| Broche A24 | DQ14 — Data input/output 14 |
| Broche A25 | DQ15 — Data input/output 15 |
| Broche A26 | VSS — Ground |
| Broche A27 | VDDQ — I/O power supply |
| Broche A28 | VSS — Ground |
| Broche A29 | VDD — Power supply |
| Broche A30 | VSS — Ground |
| Broche A31 | VDDQ — I/O power supply |
| Broche A32 | VSS — Ground |
| Broche A33 | VDD — Power supply |
| Broche A34 | VSS — Ground |
| Broche A35 | VDDQ — I/O power supply |
| Broche A36 | VSS — Ground |
| Broche A37 | VDD — Power supply |
| Broche A38 | VSS — Ground |
| Broche A39 | VDDQ — I/O power supply |
| Broche A40 | VSS — Ground |
| Broche A41 | VDD — Power supply |
| Broche A42 | VSS — Ground |
| Broche A43 | VDDQ — I/O power supply |
| Broche A44 | VSS — Ground |
| Broche A45 | VDD — Power supply |
| Broche A46 | VSS — Ground |
| Broche A47 | VDDQ — I/O power supply |
| Broche A48 | VSS — Ground |
| Broche A49 | VDD — Power supply |
| Broche A50 | VSS — Ground |
| Broche A51 | VDDQ — I/O power supply |
| Broche A52 | VSS — Ground |
| Broche A53 | VDD — Power supply |
| Broche A54 | VSS — Ground |
| Broche A55 | VDDQ — I/O power supply |
| Broche A56 | VSS — Ground |
| Broche A57 | VDD — Power supply |
| Broche A58 | VSS — Ground |
| Broche A59 | VDDQ — I/O power supply |
| Broche A60 | VSS — Ground |
| Broche A61 | VDD — Power supply |
| Broche A62 | VSS — Ground |
| Broche A63 | VDDQ — I/O power supply |
| Broche A64 | VSS — Ground |
| Broche A65 | VDD — Power supply |
| Broche A66 | VSS — Ground |
| Broche A67 | VDDQ — I/O power supply |
| Broche A68 | VSS — Ground |
| Broche A69 | VDD — Power supply |
| Broche A70 | VSS — Ground |
| Broche A71 | VDDQ — I/O power supply |
| Broche A72 | VSS — Ground |
| Broche A73 | VDD — Power supply |
| Broche A74 | VSS — Ground |
| Broche A75 | VDDQ — I/O power supply |
| Broche A76 | VSS — Ground |
| Broche A77 | VDD — Power supply |
| Broche A78 | VSS — Ground |
| Broche A79 | VDDQ — I/O power supply |
| Broche A80 | VSS — Ground |
| Broche A81 | VDD — Power supply |
| Broche A82 | VSS — Ground |
| Broche A83 | VDDQ — I/O power supply |
| Broche A84 | VSS — Ground |
| Broche A85 | VDD — Power supply |
| Broche A86 | VSS — Ground |
| Broche A87 | VDDQ — I/O power supply |
| Broche A88 | VSS — Ground |
| Broche A89 | VDD — Power supply |
| Broche A90 | VSS — Ground |
| Broche A91 | VDDQ — I/O power supply |
| Broche A92 | VSS — Ground |
| Broche A93 | VDD — Power supply |
| Broche A94 | VSS — Ground |
| Broche A95 | VDDQ — I/O power supply |
| Broche A96 | VSS — Ground |
Applications typiques
K4B4G1646D-BMH9 convient pour 6 applications: Embedded Systems, Networking Equipment, Industrial Computing, Consumer Electronics, Automotive Infotainment, Data Center and Cloud Computing.
Embedded Systems
The K4B4G1646D-BMH9 is ideal for embedded systems requiring low power and high density memory. Its 1.35V operation reduces power consumption, making it suitable for battery-powered devices. The 4Gb density provides ample storage for operating systems and applications. The 96-ball FBGA package allows for compact PCB designs, essential in space-constrained embedded applications. With data rates up to 2133Mb/s, it supports fast data processing, enhancing system responsiveness. The device's low power and high performance make it a preferred choice for industrial controllers, IoT gateways, and portable devices.
Recommandé
Networking Equipment
In networking equipment such as routers and switches, the K4B4G1646D-BMH9 provides high-speed memory for packet buffering and routing tables. Its 2133Mb/s data rate ensures low latency and high throughput, critical for network performance. The 1.35V operation reduces heat generation, improving reliability in dense networking hardware. The 4Gb density allows for large routing tables and efficient packet processing. The device's on-die termination and internal calibration enhance signal integrity, essential for high-speed data transmission. This makes it a reliable choice for enterprise and carrier-grade networking equipment.
Recommandé
Industrial Computing
The K4B4G1646D-BMH9 is well-suited for industrial computing applications such as PLCs, HMI panels, and industrial PCs. Its low power consumption and high reliability make it ideal for harsh environments. The 4Gb density supports complex control algorithms and data logging. The 96-ball FBGA package ensures robust soldering and thermal performance. With data rates up to 2133Mb/s, it enables fast data processing for real-time control. The device's wide operating temperature range (if specified) would further enhance its suitability for industrial settings. Overall, it provides a balance of performance and efficiency for demanding industrial applications.
Recommandé
Consumer Electronics
In consumer electronics like set-top boxes, smart TVs, and gaming consoles, the K4B4G1646D-BMH9 provides high-speed memory for multimedia processing. Its 1.35V operation reduces power consumption, extending battery life in portable devices. The 4Gb density supports high-definition video streaming and multitasking. The 96-ball FBGA package allows for slim device designs. With data rates up to 2133Mb/s, it ensures smooth playback and responsive user interfaces. The device's low power and high performance make it a popular choice for consumer electronics manufacturers.
Recommandé
Automotive Infotainment
The K4B4G1646D-BMH9 is suitable for automotive infotainment systems, providing high-speed memory for navigation, multimedia, and connectivity features. Its low power consumption is beneficial for vehicle power budgets. The 4Gb density supports complex infotainment software. The 96-ball FBGA package is robust for automotive environments. With data rates up to 2133Mb/s, it enables fast map rendering and media playback. The device's reliability and performance make it a viable option for automotive applications, though AEC-Q100 qualification should be verified for strict automotive requirements.
Recommandé
Data Center and Cloud Computing
In data centers and cloud computing, the K4B4G1646D-BMH9 can be used in servers and storage systems for caching and buffering. Its high data rate of 2133Mb/s supports fast data access, improving overall system performance. The 1.35V operation reduces power consumption, lowering operational costs in large-scale deployments. The 4Gb density provides sufficient memory for various workloads. The 96-ball FBGA package is suitable for high-density server boards. The device's reliability and performance make it a cost-effective solution for data center applications, though higher-density DDR4 or DDR5 may be preferred for new designs.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K4B4G1646D-BMH9 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K4B4G1646D-BHMA | K4B4G1646D-BFMA | MT41K256M16HA-125 |
|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology |
| Density | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| RoHS | Compliant | Compliant | Compliant | Compliant |
| Pin Compatibility | Reference | Pin-compatible | Pin-compatible | Not pin-compatible (ballout differences) |
Principaux différenciateurs
- Low voltage operation at 1.35V (vs MT41K256M16HA-125)
- Higher data rate support up to 2133Mb/s (vs MT41K256M16HA-125)
- Pin-compatible with other Samsung variants (vs H5TC4G63AFR-RDA)
Notes de conception
Ensure stable power supply for VDD and VDDQ at 1.35V. Use low-ESR decoupling capacitors (0.1uF and 1uF) placed close to each power pin to minimize noise and voltage droop during high-speed switching. The device requires both VDD and VDDQ supplies; they should be derived from the same source to avoid potential latch-up.
Follow the layout guidelines in the Samsung datasheet for high-speed DDR3L routing. Maintain controlled impedance for DQ, DQS, and address/command lines (typically 40-60 ohms). Keep trace lengths matched within +/- 50 mils for data groups to ensure signal integrity. Use ground planes to provide a low-inductance return path.
The 96-ball FBGA package has a thermal resistance that depends on PCB design. Ensure adequate thermal vias under the package to dissipate heat. For typical applications, the power dissipation is low due to 1.35V operation, but in high-temperature environments, consider airflow or heatsinking. Monitor junction temperature to stay within the specified operating range.
Informations de conformité
RoHS compliant and halogen-free per datasheet. AEC-Q100 not applicable for memory ICs.
