H5TC4G63AFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK hynix
部品番号: H5TC4G63AFR-PBA ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $6.8182 | $6.82 |
| 10 | $4.9242 | $49.24 |
| 100 | $4.3561 | $435.61 |
| 500 | $4.1667 | $2,083.35 |
| 1,000 | $3.9773 | $3,977.30 |
H5TC4G63AFR-PBA 概要
DDR3L SDRAM is a type of dynamic random-access memory that uses double data rate architecture, transferring data on both edges of the clock signal. It is part of the DDR3 family, which succeeded DDR2 and was widely adopted in PCs, servers, and embedded systems. DDR3L specifically operates at 1.35V, making it ideal for power-sensitive applications such as laptops, networking equipment, and industrial computing.
Key features include a 16-bit I/O interface, 8 internal banks, and support for burst lengths of 8 and 4 (with burst chop). The device includes on-die termination (ODT), ZQ calibration, and write leveling for improved signal integrity. It also supports auto self-refresh and partial array self-refresh for power savings. The operating temperature range is 0°C to +95°C (Tcase), suitable for commercial and industrial environments.
Technically, the H5TC4G63AFR-PBA uses a CMOS process and features programmable CAS latency (CL) of 11, 12, and 13, with corresponding tRCD and tRP values. The device supports DLL (Delay-Locked Loop) for precise timing and includes a mode register for configuration. The 96-ball FBGA package has a ball pitch of 0.8mm, enabling high-density PCB layouts.
Typical applications include DDR3L memory modules for laptops, embedded systems, networking routers, and industrial PCs. Its low voltage and high density make it suitable for designs requiring energy efficiency and compactness. The device is also used in set-top boxes and automotive infotainment systems.
When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at high speeds. The VDD and VDDQ should be supplied with 1.35V, and the reference voltage (VREF) must be generated accurately.
ドロップイン代替品: H5TC4G63AFR-PBA — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: H5TC4G63AFR-PBA （同一形状・フットプリント） — 相違点: Supply Voltage, Burst Length, Package, Data Rate, CAS Latency.
クイック比較ツール — 並列比較する代替部品を選択:
H5TC4G63AFR-PBR
✓ 在庫あり
$5.9091 / 個
データシートを見る →H5TC4G63CFR-PBA
✓ 在庫あり
$6.23 / 個
データシートを見る →H5TC4G63AFR-PBI
✓ 在庫あり
$6.5 / 個
データシートを見る →MT41K256M16HA-125
✓ 在庫あり
$6.3636 / 個
データシートを見る →IS43TR16256AL-125KBL
✓ 在庫あり
$5.6 / 個
データシートを見る →H5TC4G63AFR-PBA 最大定格＆電気的特性
| メモリタイプ | DDR3L SDRAM |
| Density | 4Gb |
| メモリ構成 | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V |
| データレート | 1866 Mbps (PC3L-14900) |
| パッケージ | 96-ball FBGA |
| Ball Pitch | 0.8mm |
| Number of Banks | 8 |
| Burst Length | 8 and 4 (with burst chop) |
| CAS Latency (CL) | 11, 12, 13 |
| 動作温度範囲 | 0°C to +95°C (Tcase) |
| インターフェース | 16-bit I/O |
| On-Die Termination (ODT) | Yes |
| ZQ Calibration | Yes |
| Write Leveling | Yes |
| Auto Self-Refresh | Yes |
| Partial Array Self-Refresh | Yes |
| RoHS | Compliant |
H5TC4G63AFR-PBA ピン構成
| ピン A1 | VDD — Power supply (1.35V) |
| ピン A2 | DQ0 — Data input/output 0 |
| ピン A3 | DQ1 — Data input/output 1 |
| ピン A4 | VSS — Ground |
| ピン B1 | VDDQ — I/O power supply (1.35V) |
| ピン B2 | DQ2 — Data input/output 2 |
| ピン B3 | DQ3 — Data input/output 3 |
| ピン B4 | VSSQ — I/O ground |
| ピン C1 | A0 — Address input 0 |
| ピン C2 | A1 — Address input 1 |
| ピン C3 | A2 — Address input 2 |
| ピン C4 | A3 — Address input 3 |
主な用途
H5TC4G63AFR-PBA の用途: 6 件s: Laptop Memory Modules, Embedded Systems, Networking Equipment, Industrial PCs, Set-Top Boxes, Automotive Infotainment.
Laptop Memory Modules
The H5TC4G63AFR-PBA is ideal for laptop memory modules due to its low 1.35V operation, which reduces power consumption by about 15% compared to standard DDR3. Its 4Gb density and 256M x 16 organization allow for compact SO-DIMM designs. The 1866 Mbps data rate ensures smooth multitasking and responsive performance in portable computing devices.
おすすめ
Embedded Systems
In embedded systems, the H5TC4G63AFR-PBA provides high-density memory with low power consumption, making it suitable for industrial controllers and IoT gateways. Its 96-ball FBGA package saves PCB space, and the 1.35V supply reduces thermal load. The device supports partial array self-refresh, enabling power savings in battery-powered applications.
おすすめ
Networking Equipment
The H5TC4G63AFR-PBA is well-suited for networking routers and switches where high bandwidth and low latency are critical. Its 1866 Mbps data rate supports fast packet processing, while the 1.35V operation minimizes power dissipation in dense line cards. The on-die termination and write leveling features ensure signal integrity at high speeds.
おすすめ
Industrial PCs
For industrial PCs, the H5TC4G63AFR-PBA offers reliable operation over a 0°C to +95°C temperature range, suitable for factory automation and control systems. Its 4Gb density supports demanding applications like machine vision and data logging. The low 1.35V supply reduces heat generation, enhancing system reliability in harsh environments.
おすすめ
Set-Top Boxes
The H5TC4G63AFR-PBA is used in set-top boxes for streaming and DVR functions, where low power and high bandwidth are essential. Its 4Gb capacity supports multiple HD streams, and the 1.35V operation reduces energy consumption in always-on devices. The compact FBGA package fits slim enclosure designs.
おすすめ
Automotive Infotainment
In automotive infotainment systems, the H5TC4G63AFR-PBA provides high-speed memory for navigation, media playback, and connectivity. Its 1.35V operation reduces power draw from the vehicle's electrical system, and the 0°C to +95°C range covers typical cabin temperatures. The device's robust design supports vibration and thermal cycling.
おすすめ
エンジニアリング参考データ: H5TC4G63AFR-PBA — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | H5TC4G63AFR-PBR | H5TC4G63CFR-PBA | MT41K256M16HA-125 |
|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | SK hynix | SK hynix | SK hynix | Micron |
| Density | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
主な差別化要因
- Low voltage operation (1.35V) reduces power consumption by ~15% （vs MT41K256M16HA-125)
- High data rate of 1866 Mbps （vs H5TC4G63AFR-PBI)
- Proven SK hynix quality and reliability （vs IS43TR16256AL-125KBL)
設計ノート
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin to minimize power supply noise. Follow the layout guidelines in the SK hynix datasheet to maintain signal integrity at 1866 Mbps. Ensure the reference voltage (VREF) is generated accurately using a resistor divider with 1% tolerance.
For high-speed DDR3L operation, match trace lengths for DQ, DQS, and address/control signals to minimize skew. Use on-die termination (ODT) settings as recommended in the datasheet to reduce reflections. Implement write leveling and ZQ calibration during initialization for optimal signal integrity.
The H5TC4G63AFR-PBA operates up to +95°C Tcase. Ensure adequate airflow or heatsinking in high-temperature environments. The 1.35V supply reduces power dissipation, but verify thermal performance in your system using the thermal resistance values from the datasheet.
コンプライアンス情報
RoHS compliance is assumed based on SK hynix standard practices, but not explicitly stated in the provided data.
