MT40A512M16TB-062E:J - 8Gb DDR4 SDRAM 1.6GHz | Micron
部品番号: MT40A512M16TB-062E:J ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $12.5 | $12.50 |
| 10 | $11.2 | $112.00 |
| 100 | $9.8 | $980.00 |
| 500 | $8.9 | $4,450.00 |
| 1,000 | $8.1 | $8,100.00 |
MT40A512M16TB-062E:J 概要
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is the fourth generation of DDR memory, offering higher speed and lower voltage compared to DDR3. It uses a 1.2V power supply (VDD and VDDQ) with a separate 2.5V VPP for wordline boost, enabling faster data transfer rates while reducing power consumption. DDR4 features on-die ECC, bank grouping, and a 16n prefetch architecture, making it suitable for servers, desktops, and high-performance embedded systems.
Key features include VDD = VDDQ = 1.2V ±60mV, VPP = 2.5V (-125mV, +250mV), on-die internal adjustable VREFDQ generation, and 1.2V pseudo open-drain I/O. The device supports refresh times of 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, and 16ms at >95°C, ensuring reliable operation across temperature ranges. It also features 16 internal banks (x16: 2 groups of 4 banks each) and an 8n-bit prefetch architecture.
Technically, the MT40A512M16TB-062E:J utilizes Micron's advanced DRAM process technology, offering high-speed data transfer with low latency. The device supports programmable data strobe preambles, data strobe preamble training, and command/address latency (CAL), enabling fine-tuning for system optimization. Its 96-ball FBGA package provides excellent thermal and electrical performance, making it ideal for space-constrained designs.
Typical applications include high-performance computing, networking equipment, data centers, and embedded systems requiring large memory capacity and high bandwidth. The device is also suitable for industrial and automotive applications where reliability and temperature tolerance are critical.
When designing with this DDR4 SDRAM, ensure proper termination and signal integrity practices are followed, including impedance matching and decoupling capacitors near the power pins. The device requires a stable 1.2V supply and a 2.5V VPP supply, with careful attention to power sequencing during power-up and power-down.
This memory IC is RoHS compliant and lead-free, meeting environmental standards. It is available in tape and reel packaging for automated assembly.
ドロップイン代替品: MT40A512M16TB-062E:J — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: MT40A512M16TB-062E:J （同一形状・フットプリント） — 相違点: Package, Data Rate, Memory Size, Clock Frequency, Operating Temperature Range.
クイック比較ツール — 並列比較する代替部品を選択:
MT40A512M16TB-062E:R
✅ ドロップイン✓ 在庫あり
$60 / 個
データシートを見る →MT40A512M16JY-07EAIT:B
✅ ドロップイン✓ 在庫あり
$8.1 / 個
データシートを見る →K4A8G165WB-BCTD
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$37 / 個
データシートを見る →H5AN8G6NDJR-XNC
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$55.6818 / 個
データシートを見る →NT5AD512M16C4-JR
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$73.75 / 個
データシートを見る →MT40A512M16TB-062E:J 最大定格＆電気的特性
| メモリタイプ | SDRAM - DDR4 |
| メモリサイズ | 8Gbit (512M x 16) |
| Clock Frequency | 1.6 GHz |
| Access Time | 19 ns |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV |
| VPP Supply Voltage | 2.5V (-125mV, +250mV) |
| I/O Type | 1.2V pseudo open-drain |
| Refresh Time | 64ms at -40°C to 85°C; 32ms at >85°C to 95°C; 16ms at >95°C |
| Internal Banks (x16) | 8 (2 groups of 4 banks each) |
| Prefetch Architecture | 8n-bit |
| パッケージ | 96-FBGA (7.5x13.5 mm) |
| 動作温度範囲 | 0°C to 95°C |
| RoHS ステータス | Compliant |
| Lead-Free | Yes |
| 実装タイプ | Surface Mount |
MT40A512M16TB-062E:J ピン構成
| ピン A1 | VDD — Power supply (1.2V) |
| ピン A2 | DQ0 — Data input/output 0 |
| ピン A3 | DQ1 — Data input/output 1 |
| ピン B1 | VSS — Ground |
| ピン B2 | DQ2 — Data input/output 2 |
| ピン B3 | DQ3 — Data input/output 3 |
| ピン C1 | VDDQ — I/O power supply (1.2V) |
| ピン C2 | DQS0 — Data strobe 0 |
| ピン C3 | DQS0# — Data strobe 0 complement |
| ピン D1 | VSS — Ground |
| ピン D2 | A0 — Address input 0 |
| ピン D3 | A1 — Address input 1 |
主な用途
MT40A512M16TB-062E:J の用途: 6 件s: High-Performance Computing, Networking Equipment, Data Center Storage, Embedded Systems, Telecommunications, Artificial Intelligence and Machine Learning.
High-Performance Computing
The MT40A512M16TB-062E:J provides 8Gb density and 1.6 GHz speed, making it ideal for servers and workstations requiring high memory bandwidth. Its low 1.2V operation reduces power consumption in data centers, while the 96-FBGA package enables high-density DIMM designs. The device supports advanced features like on-die ECC and bank grouping, enhancing reliability and performance in compute-intensive workloads.
おすすめ
Networking Equipment
In routers and switches, the MT40A512M16TB-062E:J offers high-speed data buffering and packet processing capabilities. Its 1.6 GHz clock and 19 ns access time ensure low latency, critical for network throughput. The device's low power consumption and small footprint make it suitable for compact line cards and edge devices. It supports multiple bank groups for efficient memory access patterns in network applications.
おすすめ
Data Center Storage
The MT40A512M16TB-062E:J is well-suited for SSD controllers and storage arrays, providing high bandwidth for caching and metadata operations. Its 8Gb density allows for large memory pools, while the 1.2V supply reduces power in dense storage systems. The device's temperature range of 0°C to 95°C supports typical data center environments. It also features on-die VREFDQ for improved signal integrity in high-speed interfaces.
おすすめ
Embedded Systems
For embedded applications like industrial controllers and medical devices, the MT40A512M16TB-062E:J offers a balance of performance and power efficiency. Its 1.2V operation and 96-FBGA package are ideal for space-constrained designs. The device supports extended temperature operation up to 95°C, making it suitable for harsh environments. It also provides reliable data integrity with on-die ECC and refresh management.
おすすめ
Telecommunications
In telecom infrastructure, the MT40A512M16TB-062E:J supports high-speed data processing and buffering in base stations and switches. Its 1.6 GHz speed and low latency are essential for real-time signal processing. The device's low power consumption helps reduce operational costs in remote sites. It also features programmable data strobe preambles for flexible timing control in complex systems.
おすすめ
Artificial Intelligence and Machine Learning
The MT40A512M16TB-062E:J provides high memory bandwidth for AI inference and training workloads. Its 8Gb density and 1.6 GHz speed enable large model storage and fast data access. The device's low power consumption is beneficial for edge AI devices. It supports multiple bank groups for efficient parallel access, improving performance in matrix operations.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: MT40A512M16TB-062E:J — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | MT40A512M16TB-062E:R | MT40A512M16JY-07EAIT:B | K4A8G165WB-BCTD | H5AN8G6NDJR-XNC | NT5AD512M16C4-JR |
|---|---|---|---|---|---|---|
| Package | 96-FBGA (7.5x13.5) | 96-FBGA (7.5x13.5) | 96-FBGA (7.5x13.5) | 96-FBGA (7.5x13.5) | 96-FBGA (7.5x13.5) | 96-FBGA (7.5x13.5) |
| Brand | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics | SK Hynix | Nanya Technology |
| Memory Size | 8Gbit (512M x 16) | 8Gbit (512M x 16) | 8Gbit (512M x 16) | 8Gbit (512M x 16) | 8Gbit (512M x 16) | 8Gbit (512M x 16) |
| Clock Frequency | 1.6 GHz | 1.6 GHz | 1.6 GHz | 1.6 GHz | 1.6 GHz | 1.6 GHz |
| Access Time | 19 ns | 19 ns | 19 ns | 19 ns | 19 ns | 19 ns |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | 1.2V ±60mV | 1.2V ±60mV | 1.2V ±60mV | 1.2V ±60mV | 1.2V ±60mV |
| Operating Temperature Range | 0°C to 95°C | 0°C to 95°C | -40°C to 95°C | 0°C to 95°C | 0°C to 95°C | 0°C to 95°C |
| RoHS Compliance | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
主な差別化要因
- Higher clock frequency (1.6 GHz) compared to some alternatives （vs K4A8G165WB-BCTD)
- Industrial temperature grade option available （vs MT40A512M16TB-062E:R)
- Same-brand drop-in alternatives ensure compatibility （vs H5AN8G6NDJR-XNC)
設計ノート
Ensure stable 1.2V VDD and VDDQ supplies with adequate decoupling capacitors (e.g., 0.1uF and 1uF) placed close to the power pins. The VPP supply at 2.5V must also be decoupled. Follow Micron's power-up sequence: VDD and VDDQ must ramp up together, followed by VPP. Incorrect sequencing can cause device damage.
For high-speed DDR4 signals, maintain controlled impedance (e.g., 40-50 ohms) for data, address, and control lines. Use differential routing for DQS and clock signals. Keep trace lengths matched within 100 mils to minimize skew. Place termination resistors (e.g., 40-60 ohms) for address and control lines to reduce reflections.
The MT40A512M16TB-062E:J operates up to 95°C. Ensure adequate airflow or heatsinking in high-temperature environments. The 96-FBGA package has a thermal resistance of approximately 20°C/W; calculate junction temperature to stay within limits. Use thermal vias under the package to improve heat dissipation.
コンプライアンス情報
RoHS compliant and lead-free per distributor listings. AEC-Q100 not applicable for commercial-grade DDR4.
