MT40A512M16TB-062E:J - 8Gb DDR4 SDRAM 1.6GHz | Micron
N.º da peça: MT40A512M16TB-062E:J ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $12.5 | $12,50 |
| 10 | $11.2 | $112,00 |
| 100 | $9.8 | $980,00 |
| 500 | $8.9 | $4.450,00 |
| 1.000 | $8.1 | $8.100,00 |
MT40A512M16TB-062E:J Visão geral
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is the fourth generation of DDR memory, offering higher speed and lower voltage compared to DDR3. It uses a 1.2V power supply (VDD and VDDQ) with a separate 2.5V VPP for wordline boost, enabling faster data transfer rates while reducing power consumption. DDR4 features on-die ECC, bank grouping, and a 16n prefetch architecture, making it suitable for servers, desktops, and high-performance embedded systems.
Key features include VDD = VDDQ = 1.2V ±60mV, VPP = 2.5V (-125mV, +250mV), on-die internal adjustable VREFDQ generation, and 1.2V pseudo open-drain I/O. The device supports refresh times of 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, and 16ms at >95°C, ensuring reliable operation across temperature ranges. It also features 16 internal banks (x16: 2 groups of 4 banks each) and an 8n-bit prefetch architecture.
Technically, the MT40A512M16TB-062E:J utilizes Micron's advanced DRAM process technology, offering high-speed data transfer with low latency. The device supports programmable data strobe preambles, data strobe preamble training, and command/address latency (CAL), enabling fine-tuning for system optimization. Its 96-ball FBGA package provides excellent thermal and electrical performance, making it ideal for space-constrained designs.
Typical applications include high-performance computing, networking equipment, data centers, and embedded systems requiring large memory capacity and high bandwidth. The device is also suitable for industrial and automotive applications where reliability and temperature tolerance are critical.
When designing with this DDR4 SDRAM, ensure proper termination and signal integrity practices are followed, including impedance matching and decoupling capacitors near the power pins. The device requires a stable 1.2V supply and a 2.5V VPP supply, with careful attention to power sequencing during power-up and power-down.
This memory IC is RoHS compliant and lead-free, meeting environmental standards. It is available in tape and reel packaging for automated assembly.
Alternativas drop-in para MT40A512M16TB-062E:J — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com MT40A512M16TB-062E:J (mesmo formato e footprint) — diferindo em Package, Data Rate, Memory Size, Clock Frequency, Operating Temperature Range.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
MT40A512M16TB-062E:R
✅ Drop-In✓ Em estoque
$60 / unidade
Ver ficha técnica →MT40A512M16JY-07EAIT:B
✅ Drop-In✓ Em estoque
$8.1 / unidade
Ver ficha técnica →K4A8G165WB-BCTD
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$37 / unidade
Ver ficha técnica →H5AN8G6NDJR-XNC
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$55.6818 / unidade
Ver ficha técnica →NT5AD512M16C4-JR
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$73.75 / unidade
Ver ficha técnica →MT40A512M16TB-062E:J Classificações máximas e características elétricas
| Tipo de memória | SDRAM - DDR4 |
| Tamanho da memória | 8Gbit (512M x 16) |
| Clock Frequency | 1.6 GHz |
| Access Time | 19 ns |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV |
| VPP Supply Voltage | 2.5V (-125mV, +250mV) |
| I/O Type | 1.2V pseudo open-drain |
| Refresh Time | 64ms at -40°C to 85°C; 32ms at >85°C to 95°C; 16ms at >95°C |
| Internal Banks (x16) | 8 (2 groups of 4 banks each) |
| Prefetch Architecture | 8n-bit |
| Encapsulamento | 96-FBGA (7.5x13.5 mm) |
| Faixa de temperatura de operação | 0°C to 95°C |
| Status RoHS | Compliant |
| Lead-Free | Yes |
| Tipo de montagem | Surface Mount |
Configuração de pinos do MT40A512M16TB-062E:J
| Pino A1 | VDD — Power supply (1.2V) |
| Pino A2 | DQ0 — Data input/output 0 |
| Pino A3 | DQ1 — Data input/output 1 |
| Pino B1 | VSS — Ground |
| Pino B2 | DQ2 — Data input/output 2 |
| Pino B3 | DQ3 — Data input/output 3 |
| Pino C1 | VDDQ — I/O power supply (1.2V) |
| Pino C2 | DQS0 — Data strobe 0 |
| Pino C3 | DQS0# — Data strobe 0 complement |
| Pino D1 | VSS — Ground |
| Pino D2 | A0 — Address input 0 |
| Pino D3 | A1 — Address input 1 |
Aplicações típicas
MT40A512M16TB-062E:J é adequado para 6 aplicaçãos: High-Performance Computing, Networking Equipment, Data Center Storage, Embedded Systems, Telecommunications, Artificial Intelligence and Machine Learning.
High-Performance Computing
The MT40A512M16TB-062E:J provides 8Gb density and 1.6 GHz speed, making it ideal for servers and workstations requiring high memory bandwidth. Its low 1.2V operation reduces power consumption in data centers, while the 96-FBGA package enables high-density DIMM designs. The device supports advanced features like on-die ECC and bank grouping, enhancing reliability and performance in compute-intensive workloads.
Recomendado
Networking Equipment
In routers and switches, the MT40A512M16TB-062E:J offers high-speed data buffering and packet processing capabilities. Its 1.6 GHz clock and 19 ns access time ensure low latency, critical for network throughput. The device's low power consumption and small footprint make it suitable for compact line cards and edge devices. It supports multiple bank groups for efficient memory access patterns in network applications.
Recomendado
Data Center Storage
The MT40A512M16TB-062E:J is well-suited for SSD controllers and storage arrays, providing high bandwidth for caching and metadata operations. Its 8Gb density allows for large memory pools, while the 1.2V supply reduces power in dense storage systems. The device's temperature range of 0°C to 95°C supports typical data center environments. It also features on-die VREFDQ for improved signal integrity in high-speed interfaces.
Recomendado
Embedded Systems
For embedded applications like industrial controllers and medical devices, the MT40A512M16TB-062E:J offers a balance of performance and power efficiency. Its 1.2V operation and 96-FBGA package are ideal for space-constrained designs. The device supports extended temperature operation up to 95°C, making it suitable for harsh environments. It also provides reliable data integrity with on-die ECC and refresh management.
Recomendado
Telecommunications
In telecom infrastructure, the MT40A512M16TB-062E:J supports high-speed data processing and buffering in base stations and switches. Its 1.6 GHz speed and low latency are essential for real-time signal processing. The device's low power consumption helps reduce operational costs in remote sites. It also features programmable data strobe preambles for flexible timing control in complex systems.
Recomendado
Artificial Intelligence and Machine Learning
The MT40A512M16TB-062E:J provides high memory bandwidth for AI inference and training workloads. Its 8Gb density and 1.6 GHz speed enable large model storage and fast data access. The device's low power consumption is beneficial for edge AI devices. It supports multiple bank groups for efficient parallel access, improving performance in matrix operations.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para MT40A512M16TB-062E:J — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | MT40A512M16TB-062E:R | MT40A512M16JY-07EAIT:B | K4A8G165WB-BCTD | H5AN8G6NDJR-XNC | NT5AD512M16C4-JR |
|---|---|---|---|---|---|---|
| Package | 96-FBGA (7.5x13.5) | 96-FBGA (7.5x13.5) | 96-FBGA (7.5x13.5) | 96-FBGA (7.5x13.5) | 96-FBGA (7.5x13.5) | 96-FBGA (7.5x13.5) |
| Brand | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics | SK Hynix | Nanya Technology |
| Memory Size | 8Gbit (512M x 16) | 8Gbit (512M x 16) | 8Gbit (512M x 16) | 8Gbit (512M x 16) | 8Gbit (512M x 16) | 8Gbit (512M x 16) |
| Clock Frequency | 1.6 GHz | 1.6 GHz | 1.6 GHz | 1.6 GHz | 1.6 GHz | 1.6 GHz |
| Access Time | 19 ns | 19 ns | 19 ns | 19 ns | 19 ns | 19 ns |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | 1.2V ±60mV | 1.2V ±60mV | 1.2V ±60mV | 1.2V ±60mV | 1.2V ±60mV |
| Operating Temperature Range | 0°C to 95°C | 0°C to 95°C | -40°C to 95°C | 0°C to 95°C | 0°C to 95°C | 0°C to 95°C |
| RoHS Compliance | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Principais diferenciais
- Higher clock frequency (1.6 GHz) compared to some alternatives (vs K4A8G165WB-BCTD)
- Industrial temperature grade option available (vs MT40A512M16TB-062E:R)
- Same-brand drop-in alternatives ensure compatibility (vs H5AN8G6NDJR-XNC)
Notas de projeto
Ensure stable 1.2V VDD and VDDQ supplies with adequate decoupling capacitors (e.g., 0.1uF and 1uF) placed close to the power pins. The VPP supply at 2.5V must also be decoupled. Follow Micron's power-up sequence: VDD and VDDQ must ramp up together, followed by VPP. Incorrect sequencing can cause device damage.
For high-speed DDR4 signals, maintain controlled impedance (e.g., 40-50 ohms) for data, address, and control lines. Use differential routing for DQS and clock signals. Keep trace lengths matched within 100 mils to minimize skew. Place termination resistors (e.g., 40-60 ohms) for address and control lines to reduce reflections.
The MT40A512M16TB-062E:J operates up to 95°C. Ensure adequate airflow or heatsinking in high-temperature environments. The 96-FBGA package has a thermal resistance of approximately 20°C/W; calculate junction temperature to stay within limits. Use thermal vias under the package to improve heat dissipation.
Informações de conformidade
RoHS compliant and lead-free per distributor listings. AEC-Q100 not applicable for commercial-grade DDR4.
