MOSFET
제품 (1294)
BSS306NH6327XTSA1 - 30V 2.3A N-Ch OptiMOS MOSFET | Infineon
The Infineon BSS306NH6327XTSA1 is an N-Channel 30 V 2.3 A small-signal OptiMOS power MOSFET housed in a 3-pin SOT-23 (PG-SOT23) surface-mount package. Optimized for low on-state resistance and fast switching, the device dissipates up to 500 mW at Ta=25°C and is qualified to AEC-Q101 for automotive applications, making it suitable for use alongside Infineon's BSS306N family of small-signal/small-power MOSFETs. A small-signal MOSFET is a low-power field-effect transistor designed for switching, level shifting, and load management in compact, high-density designs. Within the broader semiconductor taxonomy, the BSS306N sits in the discrete MOSFET category (MOSFET -> transistor -> discrete semiconductor -> semiconductor), enabling engineers to replace bipolar transistors or build efficient high-side/low-side switches where traditional BJTs would dissipate excessive heat. Key specifications include 30 V drain-source voltage (VDS), 2.3 A continuous drain current (ID) at Ta, an on-resistance of approximately 57 mΩ typical, and low gate charge for high-frequency operation. The 3-pin SOT-23 package (PG-SOT23) is one of the industry's most common small-outline footprints, allowing direct drop-in compatibility with hundreds of N-channel MOSFETs. Technically, the BSS306N leverages Infineon's OptiMOS technology, providing an optimized silicon trench cell structure that minimizes conduction and switching losses. The standard 2.5 V gate-threshold range allows direct logic-level drive from microcontrollers and ASICs without additional level-shifting circuitry. Typical applications include load switching in portable electronics, power management in battery-powered systems, signal routing in industrial automation, automotive ECUs (body and chassis modules), and general-purpose DC-DC conversion stages. When designing with this part, ensure the gate-source voltage stays within the recommended maximum and provide adequate PCB thermal relief, as 500 mW (Ta) is the absolute limit at 25°C. For high-current or high-ambient designs, derate power dissipation using the thermal resistance curve from the manufacturer datasheet. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet.
BSS308PEH6327XTSA1 - P-Ch -30V -2A OptiMOS MOSFET | Infineon | SOT-23
The Infineon BSS308PEH6327XTSA1 is a P-channel enhancement-mode small-signal MOSFET rated for -30 V VDS and -2 A continuous drain current in a 3-pin SOT-23 (PG-SOT23) surface-mount package, qualified to the automotive AEC-Q101 standard. It belongs to Infineon's OptiMOS P power-MOSFET family, which is engineered for very low on-state resistance, low gate charge, and high switching speed in a compact footprint. What is a small-signal P-channel MOSFET? A P-channel enhancement-mode MOSFET is a type of field-effect transistor (FET) that conducts when a negative voltage is applied to its gate relative to its source. The 'small-signal' classification refers to devices typically used for switching and amplification at currents under approximately 5 A, in contrast to high-power MOSFETs intended for kilowatt-scale converters. P-channel devices simplify high-side switching circuits by removing the need for a charge pump or bootstrap driver, since the gate can be driven relative to ground. Key features include a maximum drain-source on-resistance RDS(on) of 80 mΩ at VGS = -10 V, an operating temperature range of -55 °C to +150 °C, and a power dissipation rating of 500 mW on a standard FR4 board. The device is supplied on 3000-piece reels in Tape & Reel packaging and is fully RoHS compliant. The OptiMOS process technology provides an excellent figure of merit (FOM = RDS(on) × Qg), making this part particularly effective for low-loss load switching and small DC-DC converter sections. Typical applications include power-rail load switching in portable and battery-powered devices, USB On-The-Go (OTG) power muxing, reverse-polarity protection, level shifters, and general-purpose switching in automotive body electronics and infotainment subsystems. Designers frequently select this part where a P-channel high-side switch is preferred to simplify gate drive. When designing with this device, ensure that VGS never exceeds the +/-20 V absolute maximum and that adequate gate-source pulldown is provided to prevent inadvertent turn-on during transients. A small gate-source resistor (typically 10 kΩ) is recommended to discharge the gate capacitance and harden the part against dv/dt-induced turn-on.
BSS314PEH6327XTSA1 - -30V P-Ch 1.5A OptiMOS MOSFET | Infineon
The Infineon BSS314PEH6327XTSA1 is a P-channel enhancement-mode small-signal power MOSFET built on Infineon's OptiMOS process, rated for -30V VDS and -1.5A continuous drain current in a 3-pin PG-SOT23 surface-mount package. It is part of the BSS314PE family qualified to automotive standards, delivering 500mW power dissipation at TA and a maximum on-state resistance in the order of 140 mOhm at -10V VGS. A P-channel MOSFET is a type of field-effect transistor (FET) in which the conducting channel is formed by p-type semiconductor material and the device is turned on by applying a negative gate-to-source voltage. P-channel MOSFETs sit in the broader discrete-semiconductor hierarchy: FET -> MOSFET -> power MOSFET -> small-signal/small-power MOSFET -> surface-mount discrete. P-channel parts are particularly useful as high-side load switches because they can be driven directly from a logic-level signal without the charge pump required by N-channel high-side switches, simplifying USB power switching, battery load management, and LED driver topologies. Key features of the BSS314PEH6327XTSA1 include a logic-level compatible -4.5V VGS drive, low Rds(on) for low conduction loss in the ON state, low gate charge for fast switching, and integrated ESD protection. The PG-SOT23-3 footprint uses industry-standard pinout (G-S-D) enabling drop-in replacement on most SOT-23 P-channel layouts. The automotive-grade qualification makes it suitable for AEC-Q101 demanding environments. The OptiMOS chip architecture uses a trench-gate structure to minimize Rds(on) per unit silicon area and to keep gate charge Qg low for high-frequency switching efficiency. Compared to older planar P-channel generations, the trench process delivers roughly 2-3x lower on-resistance in the same die area, allowing the SOT-23 footprint to handle 1.5A continuous drain current with proper PCB copper heat-sinking. Typical applications include USB VBUS load switching, battery protection and power path management in portable electronics, DC-DC converter high-side switches, LED backlight drivers in mobile and display modules, and reverse-polarity protection circuits. Its automotive qualification also opens it to body electronics modules and infotainment rails. When designing with this part, observe the SOA limits carefully because SOT-23 has limited thermal headroom. Provide adequate copper pad area on source pin to keep junction temperature below 150 C, derate ID for ambient temperature above 25 C, and use a gate pull-down resistor to hold the device OFF during MCU reset. Place a TVS or zener from gate to source if the gate trace can see transient over-voltage during hot-plug events. This page synthesizes distributor live pricing, Infineon same-family drop-in alternatives, cross-brand pin-compatible equivalents, and practical PCB thermal guidance that you will not find in the bare datasheet PDF.
BSS316NH6327XTSA1 - 30V N-Ch 1.4A OptiMOS 2 MOSFET | Infineon
The Infineon BSS316NH6327XTSA1 is an N-channel enhancement-mode small-signal power MOSFET built on Infineon's OptiMOS 2 30V platform, rated for 30V VDS and 1.4A continuous drain current in a 3-pin PG-SOT23 (SOT-23-3) surface-mount package. It delivers a maximum on-resistance of 160 mOhm at VGS=10V and ID=1.4A, with a typical threshold voltage of 2V at 3.7uA, and is qualified to AEC-Q101 for automotive use. The device is targeted at low-voltage switching applications that demand high efficiency, fast switching, and a tiny footprint. A small-signal N-channel MOSFET is a voltage-controlled majority-carrier device in which applying a positive gate-to-source voltage above the threshold creates an inversion-layer channel that conducts current between drain and source. The "small signal" designation implies sub-2A continuous drain current, optimized gate charge, and a SOT-23-style package intended for PCB-side switching rather than power-stage conduction. Within the broader taxonomy, the BSS316N sits between discrete transistors and dedicated power MOSFETs: discrete semiconductor -> MOSFET -> N-channel MOSFET -> small-signal/OptiMOS family -> OptiMOS 2 30V class. Key features of the BSS316NH6327XTSA1 include a 30V drain-source breakdown voltage, 160 mOhm maximum RDS(on) at VGS=10V, a total gate charge (Qg) of 600 pC at VGS=5V, an input capacitance (Ciss) of 94 pF at VDS=15V, and 500 mW maximum power dissipation at TA=25C. The 3-pin PG-SOT23 package has a low thermal resistance and supports reflow soldering to standard JEDEC J-STD-020 profiles. Pb-free lead plating makes the part RoHS compliant, and AEC-Q101 qualification extends use into automotive electronics. The OptiMOS 2 technology uses an advanced trench-cell process that minimizes cell pitch and reduces both on-resistance per unit area and gate charge. The result is a low FOM (RDS(on) x Qg) figure, which translates into lower conduction and switching losses. Combined with the 30V rating, this cell architecture is well-suited to 12V automotive and 5V/12V industrial rails. Typical applications include load switching in battery-powered portable devices, high-side/low-side switches in DC-DC converter modules, USB power path management, LED backlight driving, and automotive body-electronics modules such as ECU outputs and small motor drivers. The part is also widely used as a generic high-speed level shifter or signal relay in mixed-signal designs. When designing with the BSS316N, place the gate-drive resistor as close to the gate pin as possible to limit ringing, and ensure VGS is fully driven above the threshold for low RDS(on). For switching loads above 100 kHz, account for the 600 pC Qg when sizing the gate driver. This page synthesizes distributor pricing, verified drop-in alternatives, AEC-Q101 compliance, and practical PCB-layout notes not collected in any single Infineon datasheet section.
BSS606NH6327XTSA1 - 60V 3.2A N-Ch MOSFET, SOT-89 | Infineon
The Infineon BSS606NH6327XTSA1 is an N-channel small-signal power MOSFET rated at 60 V VDS and 3.2 A continuous drain current (Ta), housed in a surface-mount PG-SOT-89 package with 1 W power dissipation (Ta). Built on Infineon's OptiMOS technology platform, the device delivers a low on-resistance of approximately 60 mΩ at VGS=10 V, making it suitable for high-efficiency switching in space-constrained designs. An N-channel MOSFET (NMOS) is a voltage-controlled semiconductor switch where a positive gate-source voltage creates an inversion layer that conducts current between drain and source. The small-signal/small-power sub-category sits between discrete signal-level transistors (SOT-23 scale, hundreds of mA) and high-current power MOSFETs (TO-220/DFN, tens of amps). Within the broader taxonomy, the BSS606N belongs to the discrete semiconductor hierarchy: N-channel MOSFET -> enhancement-mode MOSFET -> power MOSFET -> discrete semiconductor -> semiconductor. SOT-89 packaging, with its integrated heat slug, allows this NMOS to dissipate roughly twice the power of a comparably rated SOT-23 device while occupying only a small SMD footprint. Key specifications include 60 V drain-source breakdown voltage, 3.2 A continuous drain current at 25°C ambient, typical Rds(on) of 60 mΩ at VGS=10 V, low gate charge for fast switching, and a wide operating junction temperature range from -55°C to +150°C. The logic-level compatible gate drive simplifies microcontroller interfacing in 3.3 V and 5 V systems. The SOT-89 footprint provides enhanced thermal performance via the exposed tab, which must be soldered to a copper pad for proper heat dissipation. The device's architecture uses Infineon's planar OptiMOS cell design, optimized for low conduction loss and fast switching transients. The SOT-89 package integrates a metal heat-spreader tab on the underside that significantly reduces thermal resistance compared to smaller SOT packages, allowing continuous operation at higher currents within the same board area. The part is qualified to automotive standards per the manufacturer's product family page, making it suitable for both industrial and automotive subsystem designs. Typical applications include DC-DC converter power stages, motor driver H-bridges, load switching in battery management systems, LED backlight drivers, and relay/valve replacement circuits. The combination of 60 V rating and 3.2 A current capability suits 12 V and 24 V automotive bus systems, as well as point-of-load regulators in industrial 24 V supplies. When designing with this part, ensure the exposed thermal pad is soldered to a copper pour of at least 50 mm² to keep junction temperature within safe limits at full load. Gate drive traces should be kept short to minimize ringing from the device's input capacitance. This page synthesizes distributor pricing across 6+ sources, verified drop-in alternatives in the same SOT-89 footprint, and practical design notes not found in the manufacturer datasheet alone.
BSS806NEH6327XTSA1 - 20V N-Ch MOSFET 2.3A SOT-23 | Infineon
The Infineon BSS806NEH6327XTSA1 is an N-channel small-signal enhancement-mode MOSFET rated at 20V VDS and 2.3A continuous drain current (Ta), packaged in a 3-pin PG-SOT23 (SOT-23-3) surface-mount outline with 500mW (Ta) power dissipation. Qualified to AEC-Q101, this part is targeted at automotive and industrial switching applications where compact footprint and high reliability are required. An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device whose conduction between drain and source is modulated by the gate-source voltage. Within the broader discrete-semiconductor hierarchy, this part belongs to small-signal MOSFETs -> MOSFETs -> transistors -> discrete semiconductors. The enhancement-mode behavior means the device is normally off at VGS=0 and turns on when VGS exceeds the threshold voltage, simplifying logic-level drive from 3.3V or 5V microcontrollers. Infineon's small-signal N-channel family is widely used for low-side switches, level shifters, and high-frequency DC-DC converter synchronous rectifiers. Key specifications include a maximum drain-source voltage of 20V, a maximum continuous drain current of 2.3A at Ta=25C, and a maximum on-resistance (RDS(on)) of 57 mOhm (per the Infineon BSS806NE product page). The SOT-23-3 package occupies roughly 2.9 mm x 1.3 mm of board area, making it well suited for high-density PCB designs. Pb-free lead plating and RoHS compliance suit modern assembly lines, while AEC-Q101 qualification enables use in automotive body electronics, infotainment, and LED driver subsystems. Typical applications include load switches in 12V automotive systems, high-side/low-side switches for small motors and relays, battery protection circuits in portable devices, and synchronous rectification in low-voltage buck converters. The 57 mOhm RDS(on) keeps conduction losses below ~0.3W at full load, allowing 2.3A switching without external heatsinking in most use cases. Designers should keep in mind the SOT-23 thermal limitations at sustained high current and provide adequate copper pour for heat spreading when used near the rated continuous drain current.
BSS806NH6327XTSA1 - 20V N-Ch OptiMOS 2 MOSFET, SOT-23 | Infineon
The Infineon BSS806NH6327XTSA1 is an N-channel OptiMOS™ 2 small-signal MOSFET rated at 20 V VDS and 2.3 A continuous drain current (Ta), housed in a 3-pin PG-SOT23 (SOT-23-3) surface-mount package. With a maximum on-resistance of 57 mΩ and 500 mW power dissipation, it is engineered for low-voltage, high-efficiency switching where PCB real estate is at a premium. A small-signal N-channel MOSFET in SOT-23 belongs to the discrete semiconductor family tree: MOSFET -> FET -> transistor -> discrete semiconductor. Within that taxonomy the OptiMOS™ 2 line is Infineon's 20 V-class trench-generation platform that replaced the older OptiMOS™ generation with lower gate charge, lower RDS(on), and tighter logic-level drive thresholds. This device is rated "ultra-logic level" (1.8 V Vgs(th) rated), which means a 1.8 V GPIO from a microcontroller, a coin-cell cell, or a small PMIC can drive the gate directly without a charge pump or level shifter. Key features include a 20 V drain-source breakdown, 2.3 A continuous ID (Ta), 57 mΩ maximum RDS(on) at VGS=4.5 V, ultra-low gate charge (typical Qg ≈ 2.5 nC for this generation), and an avalanche-rated body diode qualified to AEC-Q101 for automotive use. The PG-SOT23 footprint uses a center pin 2 that is internally bonded to the die pad, giving designers a low-inductance source return when the center pad is soldered to a small copper pour. Typical applications include DC-DC converter synchronous rectifiers, USB load switches, battery protection circuits, motor driver low-side switches, and LED backlight drivers. Because the part is AEC-Q101 qualified, it is also suitable for 12 V automotive body-electronics loads such as door modules and small sensor switches. When designing with this device, gate-drive strength matters: a 1 kΩ gate resistor with a 10 kΩ pull-down keeps the FET off during MCU reset. For switching-converter use, keep the switching-node loop (Drain -> L -> Drain) under 5 mm to control ringing on the 20 V rating headroom.
BSS816NWH6327XTSA1 - 20V 1.4A N-Ch OptiMOS MOSFET | Infineon
The Infineon BSS816NWH6327XTSA1 is an N-Channel 20V 1.4A small-signal MOSFET built on Infineon's OptiMOS 2 process, housed in a 3-pin SOT-323 surface-mount package. It delivers a maximum drain-source on-resistance of 160 mOhm at VGS=4.5V and a continuous drain current of 1.4A at 25C ambient, with a 500mW power dissipation rating. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device used for switching and amplification. In the broader component taxonomy, the BSS816NW sits as a discrete semiconductor -> transistor -> MOSFET -> small-signal N-channel MOSFET -> power management building block. Small-signal MOSFETs like this one are optimized for low-current, high-frequency switching rather than high-power conversion. Key features include an ultra-low threshold voltage optimized for 1.8V and 3.3V logic-level drive, low on-resistance per unit area thanks to the OptiMOS 2 trench process, fast switching performance for DC-DC converter and load-switch roles, and an integrated ESD-protected gate. The SOT-323 footprint measures only 2.0mm x 1.25mm, enabling dense board layouts. The device is qualified to AEC-Q101 for automotive reliability stress. Technically, the OptiMOS 2 process uses a trench-gate architecture that minimizes R DS(on) x Qg figure of merit, the key indicator of switching loss. At 4.5V gate drive the part achieves its rated 160 mOhm R DS(on) max, while still switching usefully at 1.8V VGS for direct connection to GPIO outputs of microcontrollers and low-power SoCs. Typical applications include load switching in portable and battery-powered devices, DC-DC converter synchronous rectifier or low-side switch, battery protection and charging path control in wearables, USB power switch rails, and small motor or solenoid drivers in consumer and automotive subsystems. Its AEC-Q101 qualification also makes it suitable for body electronics and infotainment auxiliary rails. When designing with this part, place the gate pull-down resistor (typically 10k to 100k) close to the gate pin to prevent inadvertent turn-on from leakage currents. Keep the source-return and gate-loop areas small to minimize switching transients and ringing. This page synthesizes Infineon datasheet parameters, distributor pricing tiers, and application context not consolidated on any single vendor page.
BSS83PH6327XTSA1 - 60V P-Channel MOSFET 330mA | Infineon
The Infineon BSS83PH6327XTSA1 is a P-channel enhancement-mode small-signal MOSFET rated at -60V VDS and 330 mA continuous drain current, housed in a 3-pin PG-SOT23 (SOT-23-3) surface-mount package. It is part of Infineon's SIPMOS small-signal transistor family and is built using the company's OptiMOS process technology, delivering a typical RDS(on) of 2.0 ohm at VGS = -10 V and a low threshold voltage optimized for 1.8 V to 10 V gate-drive circuits. A P-channel MOSFET is a type of field-effect transistor in which the conductive channel is formed by p-type semiconductor material, and conduction is controlled by applying a negative gate-source voltage relative to the source. P-channel devices simplify high-side load switching in low-voltage systems because the load can be tied to ground and the MOSFET sits between the positive rail and the load, removing the need for a charge pump or bootstrap driver. Within the broader taxonomy, P-channel MOSFETs belong to MOSFET -> transistor -> discrete semiconductor -> semiconductor component family, alongside their N-channel counterparts. Key features of the BSS83PH6327XTSA1 include a maximum drain-source voltage of -60V, continuous drain current of 330 mA at TA = 25 C, pulsed drain current of 1.3 A, an on-resistance of 2.0 ohm maximum at VGS = -10 V, and a maximum power dissipation of 360 mW. The PG-SOT23 package measures approximately 2.9 mm x 1.5 mm x 1.0 mm, providing a compact footprint suitable for high-density PCB designs in portable and battery-powered equipment. The device uses Infineon's planar SIPMOS process, which integrates the body diode and gate protection structures on a single die. This construction yields strong ESD robustness and stable threshold characteristics over temperature. The part is qualified to the Infineon automotive grade and is suitable for both consumer and industrial environments operating from -55 C to +150 C junction temperature. Typical applications include load switching in battery management systems, power-rail OR-ing and multiplexing, level shifting between low-voltage MCUs and higher-voltage rails, reverse-polarity protection, and signal gating in portable consumer electronics. It is widely used as a compact high-side switch in handheld devices, IoT nodes, and USB peripherals where board space is at a premium. When designing with this part, observe the 360 mW power dissipation limit at 25 C ambient and derate linearly to zero at 150 C. The gate should be driven with at least -10 V for full enhancement when the lowest RDS(on) is required; lower gate voltages will increase on-resistance and conduction losses. The exposed drain tab is the device's primary thermal path and should be soldered to a copper pad of at least 25 mm squared for adequate heat spreading. This page synthesizes distributor pricing, drop-in same-package alternatives, application references, and practical design notes that go beyond the manufacturer datasheet to accelerate part selection and BOM risk reduction.
BSS84-7-F - P-Channel 50V 130mA SOT-23 MOSFET | Diodes Inc
The Diodes Incorporated BSS84-7-F is a P-channel enhancement-mode MOSFET rated at 50 V drain-source voltage (VDS), 130 mA continuous drain current (Ta), and 300 mW power dissipation, housed in a 3-pin SOT-23 surface-mount package. The -7-F suffix denotes tape-and-reel packaging with a lead-free, RoHS-compliant matte-tin plating. A P-channel enhancement-mode MOSFET is a voltage-controlled semiconductor switch that conducts when the gate-source voltage is pulled below its negative threshold. Within the power management hierarchy, small-signal MOSFETs like the BSS84 sit between general-purpose transistors and power MOSFETs, serving as low-side or high-side switches, level shifters, and load switches in power management circuits. Key features include the 50 V breakdown rating, which gives generous margin on 12 V and 24 V rails, low on-state resistance designed to minimize conduction loss, and fast switching performance suited to high-efficiency power-management applications. The SOT-23 package is one of the industry's most compact and widely assembled footprints, keeping board area and placement cost low. Technologically, the BSS84 family uses an advanced planar MOS process optimized by Diodes Incorporated to reduce RDS(ON) while maintaining superior switching behavior. The solderable matte-tin plated terminals, plated per MIL-STD-202 as noted in distributor data, support standard reflow soldering processes. Typical applications include load switches in battery-powered and portable devices, high-side switching of 12 V or 24 V industrial rails, level shifting between logic domains, relay and LED driver circuits, and general-purpose inversion in MCU and FPGA board designs. When designing with this device, remember the 300 mW Ta power limit and derate above 25C ambient; gate drive voltage directly sets RDS(ON), so driving the gate fully (e.g., -4.5 V or more) minimizes conduction loss. This page adds value beyond the manufacturer datasheet by synthesizing distributor pricing tiers, drop-in alternatives, application guidance, and design notes in one place.
BSS84-7-F-W - P-Ch 50V 130mA SOT-23 MOSFET | Diodes Inc
The Diodes Incorporated BSS84-7-F-W is a P-channel enhancement-mode MOSFET rated for 50 V drain-source voltage, 130 mA continuous drain current, and 300 mW power dissipation in a compact 3-pin SOT-23-3 surface-mount package with an on-state resistance of approximately 10 ohm. A P-channel enhancement-mode MOSFET is a voltage-controlled semiconductor switch that conducts when the gate is pulled below the source potential. Within the power management hierarchy, it belongs to the small-signal MOSFET family, which sits under discrete transistors and general-purpose power semiconductors. Unlike N-channel devices, P-channel MOSFETs such as the BSS84 are naturally suited to high-side switching, where the load connects to ground and the switch sits between the positive supply and the load. Key features include the 50 V drain-source breakdown rating, which provides generous margin on 12 V and 24 V rails; a low threshold voltage that allows direct drive from microcontroller GPIO pins in many low-voltage designs; and the matte-tin-plated, lead-free terminal finish compliant with solderability requirements. The device is designed to minimize RDS(ON) while maintaining superior switching performance, per the manufacturer datasheet. Technologically, the BSS84 family uses a high-cell-density DMOS structure that reduces on-state resistance and enables fast switching transitions with low gate charge. The -W suffix denotes Diodes Incorporated tape-and-reel packaging at 3000 units per reel for automated pick-and-place assembly. Typical applications include high-side load switches in battery-powered portable equipment, power-rail sequencing in microcontroller systems, low-power relay and LED driving, and signal-level switching in industrial control boards. A key design consideration is thermal budget: at 300 mW maximum dissipation in free air, the effective RDS(ON) at low gate drive can dominate conduction losses, so verify actual gate-source voltage in the application. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
BSS84PH6327XTSA2 - -60V P-Ch MOSFET 170mA SOT-23 | Infineon
The Infineon BSS84PH6327XTSA2 is a P-channel enhancement-mode small-signal MOSFET rated at -60 V VDS and -170 mA continuous drain current, housed in a 3-pin PG-SOT23 surface-mount package. As a member of Infineon's SIPMOS OptiMOS P-channel family, it is qualified to AEC-Q101 for automotive applications and features logic-level gate drive, low on-state resistance, and integrated dv/dt ruggedness. A P-channel MOSFET (PMOS) is a metal-oxide-semiconductor field-effect transistor in which the conducting channel is formed by hole carriers and the source-drain current flows when the gate is pulled below the source potential. PMOS parts serve as high-side switches in load-switch, level-shift, and power-rail inversion topologies; they sit within the broader semiconductor hierarchy of discrete transistors, MOSFETs, and small-signal FETs. The BSS84P family targets compact, low-current switching where N-channel equivalents would otherwise require a charge pump or bootstrap driver. Key specifications include a -60 V drain-to-source breakdown, 8 ohm maximum on-state resistance at VGS = -10 V, and a logic-level threshold that allows direct drive from 1.8 V to 5 V microcontroller GPIO. The dv/dt and avalanche ratings simplify protection design in inductive loads such as relays, solenoids, and small DC motors. The PG-SOT23 footprint measures approximately 2.9 mm x 1.5 mm with a typical thermal resistance of around 250 C/W, keeping the part within its 360 mW power budget when used as a low-duty-cycle signal switch. Architecturally, the device uses Infineon's planar SIPMOS process, which combines P-channel polarity with industry-standard SOT-23 pinning for PCB layout reuse across both P and N-channel small-signal designs. The qualified operating temperature range of -55C to +150C enables under-hood and industrial control deployments beyond commercial-only small-signal MOSFETs. Typical applications include automotive load switching, USB power-distribution switches, battery-polarity protection, signal-level shifting between 3.3 V and 12 V domains, and relay/solenoid driver stages. The logic-level gate makes it equally suited to direct GPIO control in microcontroller-based designs and to discrete inverter stages in motor-control circuits. When designing with this part, observe the maximum gate-to-source voltage of +/-20 V and confirm that peak avalanche energy stays within datasheet limits for inductive loads. A 100 kohm gate pull-up resistor is recommended for fail-safe off-state behavior when the driving GPIO enters high-impedance during reset.
BSS87H6327FTSA1 - 240V N-Ch MOSFET, 260mA, SOT-89 | Infineon
The Infineon BSS87H6327FTSA1 is an N-channel enhancement-mode small-signal MOSFET rated for 240V drain-source voltage, 260 mA continuous drain current (Ta) and 1 W power dissipation, supplied in the industry-standard SOT-89 surface-mount package (PG-SOT89-4-2) from Infineon's Small Signal N-channel family. A small-signal MOSFET is a discrete field-effect transistor optimized for low-current switching and amplification rather than high-power conversion. The BSS87 sits in the broader taxonomy of discrete semiconductors -> MOSFETs -> small-signal MOSFETs -> N-channel enhancement-mode devices. Its 240V rating is unusually high for the SOT-89 package class, making it a strong fit when designers need voltage headroom in a compact, surface-mount footprint. Key features include a maximum on-resistance (RDS(on)) of 6 ohm at VGS=10V, a low threshold voltage for direct logic-level gate drive from 5V microcontrollers, gate-source breakdown rated to +/-20V, and an automotive-grade qualification per AEC-Q101. The SOT-89 (PG-SOT89-4-2) package provides a metal tab connected to the drain that doubles as a low-thermal-resistance heatsink, enabling 1W continuous dissipation when properly land-patterned on the PCB. The device is fully RoHS compliant, lead-free (Pb-free), and qualified to the automotive reliability standard AEC-Q101, supporting use in both consumer and in-vehicle designs. Technically, the BSS87 uses Infineon's vertical DMOS process, which positions the channel vertically under the gate to maximize breakdown voltage per unit silicon area - the reason a 240V part can fit in a SOT-89 footprint that competitors normally use only for 60V-100V devices. Compared with planar small-signal MOSFETs, the vertical DMOS structure yields lower specific on-resistance and faster switching at the cost of a higher input capacitance, which the designer must account for in high-speed gate-drive design. Typical applications include high-side load switching in 24V industrial buses, LED matrix drivers, relay and solenoid drivers in automotive body modules, level shifters between low-voltage microcontrollers and high-voltage rails, and battery-protection circuits in e-mobility. The combination of 240V rating and SOT-89 footprint is rare, so designers choose this part specifically when the alternative is a much larger DPAK or TO-220. When designing with this part, ensure the gate is driven with at least 10V (or use a charge pump for low-voltage MCU control), keep dv/dt below the datasheet rating, and provide sufficient copper area on the drain tab to achieve the rated 1W dissipation at the application's ambient temperature. For automotive designs, prefer the AEC-Q101-qualified SP number to avoid requalification.
BSZ011NE2LS5IATMA1 - 25V 1.1mΩ OptiMOS 5 N-MOSFET | Infineon
The Infineon BSZ011NE2LS5IATMA1 is an N-channel OptiMOS 5 power MOSFET rated at 25 V drain-source voltage, delivering 35 A continuous drain current at TA=25°C (40 A at TC=25°C) with an ultra-low typical on-state resistance of 1.1 mΩ at VGS=10 V, packaged in a compact surface-mount PG-TSDSON-8-34 (PQFN 3.3x3.3 mm) package. It is designed for high-efficiency DC-DC conversion in switched-mode power supplies, synchronous rectification, and OR-ing applications where conduction losses dominate the total power budget. A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or regulate current in power-conversion circuits. Within the broader semiconductor taxonomy, this device sits in the N-channel enhancement-mode MOSFET family, descending from power MOSFETs, which belong to the discrete semiconductor category. Compared with older planar MOSFET generations, OptiMOS 5 uses Infineon's latest trench technology to shrink per-die RDS(on), gate charge, and output charge (Qoss), enabling higher switching frequencies and smaller magnetics in modern SMPS designs. Key features include a maximum drain-source voltage VDS of 25 V, a logic-level-compatible gate threshold around 1.0-1.7 V (VGS(th) typical), gate drive from 4.5 V to 10 V, and a maximum power dissipation of 69 W at TC=25°C. The PQFN 3.3x3.3 mm footprint uses an exposed drain pad for direct PCB heatsinking, achieving low thermal resistance junction-to-case. The device is lead-free, RoHS compliant, and rated for MSL1 floor-life per JEDEC J-STD-020. The OptiMOS 5 process combines a deep-trench cell structure with a thin wafer backside metallization, balancing low RDS(on) (1.1 mΩ) with optimized switching figures of merit (FOM = RDS(on) × Qg). This makes the BSZ011NE2LS5I ideally suited for 12 V rails in servers, telecom bricks, and USB-PD adapters. The small Qoss also reduces losses in zero-voltage-switching (ZVS) topologies such as LLC and phase-shifted full bridges. Typical applications include synchronous buck converters in 12 V input POL regulators, hot-swap OR-ing in redundant server supplies, battery management protection FETs in 1S-3S Li-ion packs, and low-side switches in motor pre-drivers. Compared with D-pak alternatives, the PQFN 3.3x3.3 mm footprint delivers comparable thermal performance in roughly one-third the board area. When designing with this device, place the gate driver within 5 mm of the gate pin and use a 10 Ω gate-source resistor to prevent parasitic turn-on. Ensure the exposed pad has at least 25 mm² of copper pour on top and inner PCB layers stitched with thermal vias to limit junction temperature rise at full 40 A load. This page synthesizes distributor pricing, parametric drop-in alternatives, and practical PCB layout guidance not consolidated in the manufacturer datasheet, giving power designers an actionable one-stop engineering reference.
BSZ017NE2LS5IATMA1 - 25V OptiMOS 5 N-FET, 1.7mΩ TSDSON-8
The Infineon BSZ017NE2LS5IATMA1 is an N-channel power MOSFET from the OptiMOS 5 25V family, rated for 25V VDS, 27A continuous drain current at TA, and 40A at TC, with an ultra-low typical on-resistance of 1.7 mΩ at VGS=10V and ID=20A. The device is housed in the compact PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) surface-mount package, dissipating 2.1W at TA and 50W at TC. It is supplied on Tape & Reel and qualified to -55°C to +150°C junction temperature for harsh-environment designs. A power MOSFET is a voltage-controlled semiconductor switch that modulates current flow between its drain and source terminals in response to a gate-source voltage. Modern N-channel trench MOSFETs such as OptiMOS 5 sit within the broader taxonomy of discrete power semiconductors (MOSFET > transistor > discrete semiconductor), and are the dominant switching element in synchronous buck converters, motor drives, hot-swap controllers, and OR-ing circuits where ultra-low RDS(on) and small package footprint are mandatory. Infineon's OptiMOS 5 generation targets highest power density and energy efficiency in both standby and full-operation regimes. Key features include RDS(on) of 1.7 mΩ @ VGS=10V, ±16V VGS rating, gate charge of 30 nC @ VGS=10V, and input capacitance of 2000 pF @ VDS=12V. The threshold voltage of 2V @ 250µA simplifies logic-level interfacing, and the TSDSON-8-FL package exposes the die for direct PCB heatsinking. Compared with older OptiMOS 3/4 generations, this part delivers a figure-of-merit reduction that enables higher switching frequencies without exceeding thermal limits. Typical applications include high-current DC-DC synchronous buck converters, USB Power Delivery (PD) and QuickCharge adapters, hot-swap and OR-ing circuits on 12V/20V distribution rails, e-fuse and battery protection FETs in 1S-3S lithium-ion packs, motor drive half-bridges in robotics and e-bikes, and Class-D audio amplifier output stages. The 1.7 mΩ on-resistance keeps conduction losses below 1% even at 20A, supporting high-efficiency 25V point-of-load designs. When designing with this part, observe the ±16V absolute maximum VGS rating and avoid exceeding 12V VGS in normal operation to prevent oxide stress. The exposed pad must be soldered to a sufficiently large copper pour (at least 50 mm² on a 1 oz board) to keep the junction within thermal limits at 40A pulses. Place the gate-drive resistor as close as possible to pin 1 to suppress parasitic turn-on.
BSZ018NE2LSATMA1 - 25V OptiMOS N-Ch MOSFET, 23A/40A | Infineon
The Infineon BSZ018NE2LSATMA1 is an N-channel OptiMOS 25V power MOSFET housed in a PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) surface-mount package. The device delivers 23A continuous drain current at TA (Tambient) and 40A at TC (case temperature), with on-resistance rated for very low conduction loss and total power dissipation of 2.1W (TA) rising to 69W (TC) when properly heat-sunk through the exposed pad. A power MOSFET is a voltage-controlled majority-carrier switch used to convert and regulate electrical energy with high efficiency. In the broader taxonomy, this N-channel enhancement-mode MOSFET belongs to the discrete power semiconductor family, typically paired with a gate driver IC and a PWM controller in switched-mode power supplies (SMPS), motor drives, and synchronous-rectifier stages. The OptiMOS 25V family from Infineon targets low-voltage, high-current applications where low RDS(on) and low gate charge are critical. Key features of the BSZ018NE2LSATMA1 include an ultra-low typical on-resistance in the single-digit milliohm range, an optimized gate-charge (Qg) figure for reduced switching loss, a logic-level compatible gate threshold, and a lead-free, halogen-free package that is fully RoHS compliant. The PG-TSDSON-8-FL footprint uses a flat-lead design that improves solder-joint reliability under thermal-cycling stress compared with traditional gull-wing leads. The MOSFET is built on Infineon's advanced trench OptiMOS process, which shrinks cell pitch and lowers figure-of-merit (FOM = RDS(on) x Qg). The exposed pad provides a low thermal-impedance path (RthJA optimized for 2 oz copper on standard JEDEC test boards), allowing the silicon to drive substantial continuous current when PCB copper is used as the heat-spreader. Typical applications include synchronous rectification in 12V DC-DC buck converters for servers and telecom, battery protection and load switching in 1- to 4-cell Li-ion systems, hot-swap and eFuse circuits on 12V distribution rails, USB-PD power-path OR-ing, and motor-drive half-bridges for small BLDC fans. The 25V drain-source rating provides comfortable margin above nominal 12V rails, accommodating transients on automotive and industrial buses. When designing with this part, place the gate-drive loop as tight as possible (gate resistor within 5 mm of the gate pin) and use a Kelvin-source connection if available. The exposed pad must be soldered to a copper pour of at least 25 mm² on each layer, stitched with thermal vias, to achieve the rated 69W dissipation at TC. This page synthesizes distributor pricing, same-family drop-in alternatives, and practical PCB-layout design notes not found in the manufacturer datasheet.
BSZ018NE2LSIATMA1 - 25V N-Ch OptiMOS 1.8mOhm MOSFET | Infineon
The Infineon BSZ018NE2LSIATMA1 is an N-channel OptiMOS power MOSFET rated at 25 V drain-source voltage, delivering 22 A continuous drain current (Ta) and 40 A (Tc) in a compact PG-TSDSON-8-FL surface-mount package. The device features an ultra-low typical on-resistance of 1.8 mOhm at VGS=10 V, making it one of the most efficient 25 V parts in the Infineon OptiMOS 25V family. An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled majority-carrier device in which the drain-source channel is n-doped and the gate is isolated by a thin oxide layer. Within the broader semiconductor taxonomy, a MOSFET belongs to the transistor family -> field-effect transistor family -> power discrete -> power management building block. OptiMOS is Infineon's proprietary power-MOSFET platform optimized for low RDS(on) and high switching frequency; it is widely used as a synchronous rectifier, low-side switch, or load switch in switched-mode power supplies (SMPS) and battery-management systems. Key features include 1.8 mOhm typical RDS(on) at VGS=10 V, 160 A pulsed drain current (IDM), 2.1 W power dissipation at Ta=25 C and 69 W at Tc=25 C, and integrated ESD protection. The PG-TSDSON-8-FL package provides an exposed pad for low thermal resistance, enabling direct heatsinking to the PCB copper pour. The device is RoHS compliant and qualified for industrial-grade operating temperatures of -55 C to +150 C. The BSZ018NE2LSIATMA1 uses Infineon's advanced trench MOSFET technology, which achieves exceptionally low RDS(on) per unit silicon area by orientating the channel vertically. Compared with older planar MOSFETs of the same die size, this design reduces conduction losses by approximately 30-50% at the same load current. The result is cooler operation, smaller footprint, and higher power density in space-constrained designs. Typical applications include DC-DC converters in computing and server power rails, synchronous rectification in telecom and networking equipment, battery management and protection in lithium-ion packs, motor control in small drones and robotics, and high-current load switches in industrial automation. The 25V rating is well-matched to 12V bus rails with generous transient headroom. When designing with this part, prioritize PCB layout for minimum source-inductance loop: place the gate driver close to the gate pin, use wide copper pours on source/ drain, and stitch multiple vias to inner thermal layers. The exposed pad must be soldered to a sufficiently large copper area to keep junction temperature within safe limits. This page synthesizes distributor pricing, drop-in alternatives from the OptiMOS family and competitor equivalents, and practical design notes not found in the manufacturer datasheet alone.
BSZ024N04LS6ATMA1 - 40V 24A OptiMOS 6 N-MOSFET | Infineon
The Infineon BSZ024N04LS6ATMA1 is a 40V N-channel power MOSFET from the OptiMOS 6 family, rated for 24A continuous drain current at 25°C case (40A pulsed capability at Tc) and housed in a source-down PG-TSDSON-8-FL package with an exposed drain pad for top-side cooling. Its headline figure-of-merit is a 2.4 mΩ maximum R<sub>DS(on)</sub> at V<sub>GS</sub>=10V, achieved in a chip-scale 8-pin package with a typical land pattern of approximately 3.3 mm x 3.3 mm. The part is intended as a 30%-lower-loss upgrade over earlier OptiMOS generations for SMPS, charger and ORing circuits. A power MOSFET is a voltage-controlled majority-carrier switch that regulates current flow between drain and source in response to a gate-source voltage. N-channel MOSFETs like the BSZ024N04LS6 turn on when V<sub>GS</sub> rises above a threshold (typically 2.3V for this part), allowing low-resistance conduction. They sit hierarchically under transistors -> discrete semiconductors -> active components, and form the synchronous-rectifier or high-side switch building blocks in virtually every modern DC-DC converter and motor drive. Key features include a 40V drain-source breakdown voltage, 75W continuous power dissipation at Tc, a low 25 nC total gate charge at V<sub>GS</sub>=10V, and a 19 pF output capacitance that together minimize switching losses in hard-switched topologies. The package exposes the drain on the top side, enabling direct cooling via an additional heatsink or copper block on top of the part. Per Infineon product literature, the device targets synchronous rectification in 12V bus converters, USB-PD chargers, battery management ORing FETs, and motor-drive half-bridges. The OptiMOS 6 technology uses a shielded-gate trench structure that reduces both on-resistance and gate charge simultaneously. Compared with previous OptiMOS 5 generations, the BSZ024N04LS6 delivers a 30% lower R<sub>DS(on)</sub> for the same die area, which directly translates to lower conduction loss and higher power density at the system level. The 2.5W power dissipation rating at Ta (mounted on a 1 in² 2 oz copper JEDEC EIA/JESD51 1s0p test board) limits the part to applications where case temperature is actively managed, while the 75W Tc rating enables higher throughput with a top-side thermal interface. Typical applications include synchronous rectification in 24V-to-low-voltage isolated DC-DC bricks, ORing FETs in redundant 12V server rails, low-side switches in BLDC motor drives, and high-frequency buck converters for USB-PD adapters up to 100W. Its 2.4 mΩ on-resistance at 10V drive also makes it attractive as the protection switch in hot-swap controllers. When designing with this MOSFET, ensure the gate driver can source/sink enough peak current to charge the 25 nC Qg within the desired switching interval; for 500 kHz operation a 1A peak gate-drive capability is recommended. The exposed top-side drain pad requires a thermal interface material and mechanical clamping when used with an external heatsink.
BSZ031NE2LS5ATMA1 - 25V N-Ch 3.1mOhm OptiMOS 5 MOSFET | Infineon
The Infineon BSZ031NE2LS5ATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 5 25V/30V technology platform, delivering a drain-source on-resistance of 3.1 mOhm maximum at VGS=10 V and supporting continuous drain current up to 19 A (Ta) or 40 A (Tc). Housed in a compact PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) surface-mount package, this part is engineered for high-efficiency synchronous rectification, OR-ing, and hot-swap switching. An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled majority-carrier device in which a positive gate-source voltage inverts the surface of a p-type body region to create an n-type conduction channel between source and drain. Within the broader semiconductor taxonomy, this places the BSZ031NE2LS5ATMA1 in the power MOSFET family, which sits under discrete semiconductors and ultimately within power electronics. OptiMOS 5 specifically refers to Infineon's fifth-generation trench MOSFET process, which reduces Rds(on) x Qg figure-of-merit, shrinks die size, and lowers switching losses versus earlier OptiMOS generations. Key electrical features include a 25 V drain-source breakdown voltage, an ultra-low typical Rds(on) of approximately 3.1 mOhm at VGS=10 V, and a thermally enhanced exposed-pad package with PG-TSDSON-8-FL land pattern. The part is rated for 2.1 W continuous dissipation at ambient (Ta) and up to 30 W with case temperature controlled at 25 C, making it suitable for high-current-density point-of-load converters and USB-PD sink paths. The OptiMOS 5 process also delivers low gate charge Qg and reduced Q<sub>rr</sub>, supporting MHz-class switching frequencies. Typical applications include synchronous rectification in 12 V buck converters for server/telecom POL rails, high-side/low-side switches in USB Power Delivery and Type-C adapters, battery management protection FETs in 1S-2S lithium packs, motor drive H-bridges in 12 V brushless systems, and OR-ing switches for redundant 12/24 V power rails. The combination of low Rds(on) and small footprint makes it particularly attractive when PCB area is constrained and conduction loss dominates the thermal budget. When designing with this part, ensure that VGS is driven with a true 10 V rail (logic-level 3.3 V drive alone will not fully enhance the channel) and place the gate driver within 5 mm of the gate pin to minimize parasitic inductance. The exposed thermal pad must be soldered to a sufficiently large copper pour - typically at least 100 mm^2 on each side of the part - to achieve the rated continuous drain current without exceeding the 150 C maximum junction temperature. This page synthesizes distributor pricing, drop-in alternatives from the Infineon OptiMOS 5 family, and practical layout notes not aggregated in the manufacturer datasheet alone.
BSZ036NE2LSATMA1 - 25V N-Channel OptiMOS Power MOSFET | Infineon
The Infineon BSZ036NE2LSATMA1 is an N-channel OptiMOS power MOSFET rated at 25V VDS with continuous drain current of 16A at TA=25C and 40A at TC=25C, packaged in the compact surface-mount PG-TSDSON-8-FL (5x6 mm) outline. It belongs to Infineon's OptiMOS 25V family, optimized for low RDS(on) and high switching efficiency in space-constrained synchronous rectification, DC-DC conversion, and battery protection applications. A power MOSFET is a voltage-controlled semiconductor switch that converts a gate signal into a low-loss conduction path between drain and source. N-channel enhancement-mode MOSFETs like the BSZ036NE2LSATMA1 are the workhorses of modern switched-mode power supplies, where their very low on-resistance minimizes conduction losses. The OptiMOS 25V family specifically targets synchronous rectification in buck converters, hot-swap controllers, and load switches where ultra-low gate charge and figure-of-merit are critical. The hierarchy is: MOSFET -> discrete semiconductor -> power switch -> power management building block. Key features of the BSZ036NE2LSATMA1 include an extremely low typical on-resistance per cell, low Qg total gate charge, and an exposed-drain pad package providing top-side cooling. The device dissipates 2.1W at TA=25C (free-air) and 37W at TC=25C (infinite heatsink), with an integrated ESD-protected gate structure. The TSDSON-8-FL footprint is fully compatible with industry-standard PowerPAK SO-8 land patterns, enabling straightforward migration from legacy 25V SO-8 MOSFETs. Technically, the BSZ036NE2LSATMA1 uses Infineon's advanced trench MOSFET cell architecture, achieving a low R_DS(on) at 10V VGS with optimized switching loss balance. The low Qrr reverse-recovery charge and small Qgd/Qgs ratio make it suitable for high-frequency (>500 kHz) buck topologies where conventional planar MOSFETs would incur excessive switching loss. The asymmetric source-drain layout of the TSDSON package supports low-side synchronous rectification roles with a Kelvin source connection option. Typical applications include synchronous rectification in 12V-input buck converters for servers and telecom, high-current DC-DC point-of-load regulators on multi-phase VRMs, USB-PD and battery management FETs in mobile devices, hot-swap load switches on distributed power backplanes, and motor drive low-side switches in small BLDC fan/pump drivers. The 25V rating provides a comfortable margin over 12V and 19V adapter rails. When designing with this part, the maximum drain current is thermally limited - in free air (TA=25C, no heatsink) the safe continuous current is 16A, while proper PCB copper cooling extends this significantly. The exposed pad must be soldered to a sufficient copper pour (recommended >=1 square inch top-side) to achieve datasheet SOA. VGS(th) is logic-level compatible, simplifying direct MCU GPIO drive for low-current switching roles. This page synthesizes distributor pricing from DigiKey and Mouser, drop-in OptiMOS family alternatives, and practical PCB layout guidance not aggregated on a single manufacturer page, giving engineers a faster engineering decision path.
BSZ0501NSIATMA1 - 30V 40A OptiMOS 5 N-Channel MOSFET | Infineon
The Infineon BSZ0501NSIATMA1 is an N-Channel 30 V, 40 A OptiMOS 5 power MOSFET in a 3.3 mm x 3.3 mm PG-TSDSON-8-FL surface-mount package with an exposed drain pad. It is specified for 25 A continuous drain current at TA=25C and 40 A at TC=25C, with 2.1 W power dissipation at TA=25C and 50 W at TC=25C, and is part of Infineon's OptiMOS 5 25V/30V benchmark family for highest power density and energy efficiency. What is an N-Channel Power MOSFET? An N-Channel MOSFET is a voltage-controlled semiconductor switch in which a positive gate-source voltage creates an n-type conduction channel between drain and source. Power MOSFETs are widely used as switching elements in DC-DC converters, motor drivers, and load switches, sitting in the hierarchy: N-Channel MOSFET -> power MOSFET -> discrete semiconductor -> active component. The OptiMOS 5 generation specifically targets synchronous-rectification, OR-ing, and hot-swap applications in computing, telecom, and consumer systems. Key features include ultra-low on-state resistance for reduced conduction losses, a small 3.3 x 3.3 mm PG-TSDSON-8-FL footprint, integrated source-connected Schottky-like body diode optimized for synchronous rectification, and a 30 V drain-source rating suitable for 12 V rails and 19 V notebook adapter buses. The combination of low Rds(on) and small package delivers the high power density OptiMOS 5 is known for. Technically, the device is built on Infineon's advanced trench technology, which minimizes cell pitch and FOM (figure of merit). Compared to the prior OptiMOS 3 generation, this part achieves lower gate charge and switching losses, making it well suited to high-frequency DC-DC converters. The drain pad is the thermal pad, enabling direct PCB heat spreading. Typical applications include synchronous rectification in 12 V VRM / POL converters, DC-DC buck and boost converters in notebooks and servers, low-voltage motor drive, battery protection and OR-ing in multi-cell battery packs, and high-side / low-side switching in telecom bricks. The 30 V rating also gives headroom for 24 V industrial rails. Design considerations include keeping the gate drive at 10 V for full enhancement, minimizing gate-loop inductance for clean switching edges, and providing sufficient PCB copper on the exposed drain pad to dissipate up to 2.1 W at ambient (or 50 W with TC heatsinking). Place the gate resistor close to the gate pin to dampen ringing. This page synthesizes distributor pricing, drop-in alternatives within the same PG-TSDSON-8-FL footprint, and practical design notes not collected in any single manufacturer datasheet, giving procurement and design engineers a single reference for the BSZ0501NSIATMA1.
BSZ060NE2LSATMA1 - 25V 44A OptiMOS N-Channel MOSFET | Infineon
The Infineon BSZ060NE2LSATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS™ technology platform, rated at 25 V drain-source voltage and capable of 12 A continuous drain current at 25 °C case or 44 A pulsed case, housed in a compact surface-mount PG-TSDSON-8-FL package. Its headline parameters are 6 mΩ maximum on-resistance at 10 V VGS, 25 V VDS, and 44 A IDM (pulsed), making it optimized for high-efficiency DC-DC conversion in space-constrained power designs. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the active switching element in synchronous buck converters, half-bridges, and load-switch circuits. It belongs to the discrete semiconductor hierarchy: MOSFET -> transistor -> discrete semiconductor -> semiconductor device. Within the MOSFET family, N-channel enhancement-mode devices dominate low-voltage (<=40 V) synchronous rectification because their lower RDS(on) per unit silicon area enables higher current handling and lower conduction loss than equivalent P-channel parts. Key features include Infineon's OptiMOS™ trench-gate process, which achieves industry-leading Figure of Merit (RDS(on) × Qg) for switching loss reduction, a logic-level compatible gate threshold typically supporting 4.5 V drive, and low thermal resistance through the exposed-die pad. The TSDSON-8-FL package provides an exposed lead frame that doubles as the drain connection and thermal dissipation path, allowing the device to dissipate up to 26 W when properly mounted on a PCB with adequate copper thermal vias. The BSZ060NE2LSATMA1's combination of 25 V rating, sub-10 mΩ on-resistance, and small footprint makes it particularly suited for point-of-load converters in servers, notebook adapters, USB-PD power paths, and motor drive half-bridges. The OptiMOS™ technology family shares a common datasheet and pinout, allowing designers to scale to higher or lower RDS(on) variants without board rework. When designing with this part, prioritize a 4-layer PCB with a thermal copper pour under the exposed pad; keep the gate-drive loop area minimal to limit ringing; and verify the SOA (Safe Operating Area) at the application's VDS, ID, and pulse-width combination. Compared with older TrenchFET or DMOS parts, this MOSFET reduces switching losses by approximately 30 percent at 25 V operation. Typical applications for the BSZ060NE2LSATMA1 include synchronous buck converters in networking switches, battery management system (BMS) protection FETs, hot-swap controllers on server backplanes, USB Type-C PD load switches, and motor drive half-bridges in small fans and pumps. The combination of low RDS(on), small footprint, and 25 V rating makes it a strong fit wherever efficiency and board area both matter. This page synthesizes distributor stock and pricing, pin-compatible drop-in alternatives from Infineon's OptiMOS™ family, and practical PCB layout notes not found in the manufacturer datasheet.
BSZ065N03LSATMA1 - 30V N-Channel OptiMOS MOSFET | Infineon
The Infineon BSZ065N03LSATMA1 is an N-channel 30V OptiMOS power MOSFET rated for 12A continuous drain current at TA=25C and 40A at TC=25C, housed in a compact PG-TSDSON-8-FL (S308) surface-mount package. It belongs to Infineon's OptiMOS 30V family, which is optimized for synchronous rectification, OR-ing, and high-frequency DC-DC conversion in space-constrained designs. The device offers very low on-state resistance and ultra-low gate/output charge, making it especially suitable for voltage-regulator solutions in servers, datacom, and telecom systems where efficiency and power density are critical. A power MOSFET such as the BSZ065N03LSATMA1 is a three-terminal voltage-controlled switch that uses an insulated gate to modulate conduction between the drain and source terminals. The OptiMOS family uses Infineon's advanced trench technology, which falls within the broader power MOSFET hierarchy (power MOSFET -> discrete semiconductor -> power management building block). Optimized low-voltage N-channel devices like this one are the workhorse synchronous-rectifier and high-side/low-side switch in modern buck, boost, and half-bridge converter topologies. Key features include the S308 (PG-TSDSON-8-FL) footprint measuring approximately 3.3 x 3.3 mm with an exposed drain pad for low thermal resistance (2.1 W at TA, 26 W at TC dissipation ratings). It supports standard 4.5V gate drive typical of low-voltage logic-level MOSFETs, and its low gate charge enables fast switching at multi-hundred-kHz converter frequencies. The combination of low RDS(on) and small footprint targets point-of-load converters, hot-swap controllers, and battery-protection switches. The OptiMOS 30V family targets demanding synchronous-rectifier roles in multiphase VRM designs for server CPUs, GPUs, and ASICs. The trench cell architecture minimizes conduction loss while preserving ruggedness against linear-mode and avalanche stresses typical in OR-ing and hot-swap circuits. Typical applications include synchronous rectification in DC-DC buck converters, OR-ing FETs in redundant power supplies, hot-swap controllers in server backplanes, motor drive low-side switches, and battery-management protection in 1S-4S Li-ion packs. Designers choose this part when board area is at a premium but absolute current stays below ~40A. When designing with this part, place gate-drive resistors close to the gate pin to limit ringing, and connect the exposed drain pad to a sufficiently large copper pour. Verify SOA against expected linear-mode transients during hot-swap turn-on to avoid exceeding junction temperature limits. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
BSZ065N06LS5ATMA1 - 60V 65A OptiMOS 5 N-Ch MOSFET | Infineon
The Infineon BSZ065N06LS5ATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS™ 5 logic-level technology, rated for 60 V drain-source voltage and 65 A continuous drain current, housed in a compact PQFN 3.3 x 3.3 (PG-TSDSON-8-FL) surface-mount package. It features a maximum on-resistance of 6.5 mΩ at VGS=10 V and is designed to deliver very low conduction losses in a small PCB footprint. A power MOSFET is a voltage-controlled semiconductor switch that regulates current flow between its drain and source terminals in response to a gate drive voltage. MOSFETs form the core switching elements in synchronous buck converters, motor drives, load switches, hot-swap controllers, and battery protection circuits, occupying the lowest tier of the power-electronics hierarchy: switch -> converter -> power supply -> system. The BSZ065N06LS5 belongs to the OptiMOS 5 logic-level family, which is optimized for low gate charge and fast switching at standard 4.5 V to 10 V gate drive levels commonly produced by microcontrollers and standard gate drivers. Key features of the BSZ065N06LS5ATMA1 include 6.5 mΩ maximum RDS(on) at VGS=10 V, a low gate threshold suitable for logic-level drive, 46 W maximum power dissipation, and an operating junction temperature range of -55°C to +150°C. The OptiMOS 5 process delivers excellent figure-of-merit (FOM = RDS(on) × Qg), reducing both conduction and switching losses simultaneously. Per the Infineon datasheet, the device is logic-level compatible and engineered for high-frequency DC-DC conversion. Typical applications for this part include wireless charging power stages, adapter and telecom point-of-load converters, synchronous rectification, motor control, hot-swap and load-management circuits, and battery management systems in 12 V/24 V rails. According to the manufacturer, OptiMOS 5 logic-level parts are highly suitable for wireless charging, adapter and telecom applications where efficiency and small size are both required. When designing with the BSZ065N06LS5, ensure that gate-drive voltage reaches the full logic-level plateau (10 V recommended for lowest RDS(on)) and that PCB copper area under the exposed pad is maximized for thermal dissipation. The S3O8/TSDSON-8-FL package relies on its thermal pad for heat removal, so a thermal via array is recommended. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, including parametric proximity comparison and same-footprint cross-brand guidance.