IQE220N15NM5ATMA1 - 150V N-Ch OptiMOS 5 MOSFET | Infineon
부품 번호: IQE220N15NM5ATMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $1.55 | $1.55 |
| 10 | $1.39 | $13.90 |
| 100 | $1.06 | $106.00 |
| 500 | $0.95 | $475.00 |
| 1,000 | $0.84 | $840.00 |
IQE220N15NM5ATMA1 개요
An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled, majority-carrier device whose drain-source conduction is gated by a positive threshold voltage on the gate. The OptiMOS 5 family represents Infineon's fifth-generation trench MOSFET platform, positioned within the broader power management IC and discrete semiconductor hierarchy as a building block for synchronous rectification, hot-swap, and high-frequency switching stages in modern power electronics.
Key features include 150 V VDS max rating, 22 mΩ on-resistance (VGS = 10 V), 14.4 nC total gate charge, 14 pF Ciss, 340 pF Coss, 4.6 V VGS(th) at 46 µA, and an integrated Source-Down package that exposes the source lead to the top pad for improved thermal dissipation. The Source-Down PG-TSON-8-5 layout flips the conventional land pattern to deliver the thermal pad directly to the PCB's heat-spreading copper pours, lowering junction-to-ambient thermal resistance compared to standard TSON-8 outlines.
Architecturally, the device uses Infineon's latest trench-cell process with a stripe-cell pitch optimized for low FOM (RDS(on) × Qg), enabling 100 kHz+ hard-switching operation in telecom and SMPS applications. The Source-Down leadframe routes the source terminal through the bottom of the die, allowing paralleled devices to share a continuous top-side copper plane as both electrical return and heatsink.
Typical applications include 48 V telecom point-of-load converters, synchronous rectification in SMPS, hot-swap controllers on 80 V-100 V distribution rails, motor drive half-bridges, eFuse/ORing switches, and industrial e-mobility auxiliary converters. Compared to a standard MOSFET, the Source-Down variant shifts the system-level thermal budget toward the PCB rather than the package, simplifying mechanical design in space-constrained modules.
When designing, place at least 100 mm² of top-side copper on the source pad, gate-drive the MOSFET from a 10 V capable driver with sub-50 ns rise/fall times, and respect the SOA at high drain voltages where thermal derating becomes critical. Validate VGS(th) at the minimum operating temperature to ensure full enhancement.
This page synthesizes Infineon datasheet specifications, distributor pricing, drop-in alternatives, and Source-Down PCB layout guidance not found in standard MOSFET comparison tools.
드롭인 대체품: IQE220N15NM5ATMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: IQE220N15NM5ATMA1 (동일 폼 팩터 및 풋프린트) — 차이점: Package, Technology, Operating Temperature Range, Gate Threshold Voltage (VGS(th)), Drain-Source Voltage (VDS).
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IQE220N15NM5CGSCATMA1
✅ 드롭인✓ 재고 있음
$2.18 / 개
데이터시트 보기 →IPTG025N15NM6ATMA1
✅ 드롭인✓ 재고 있음
$1.52 / 개
데이터시트 보기 →IQE065N10NM5CGSCATMA1
✅ 드롭인✓ 재고 있음
$1.28 / 개
데이터시트 보기 →IQE013N04LM6ATMA1
✅ 드롭인✓ 재고 있음
$0.71 / 개
데이터시트 보기 →ISC015N06NM5LF2ATMA1
✅ 드롭인✓ 재고 있음
$2.21 / 개
데이터시트 보기 →IQDH88N06LM5CGSCATMA1
✅ 드롭인✓ 재고 있음
$2.31 / 개
데이터시트 보기 →IQE220N15NM5ATMA1 최대 정격 & 전기적 특성
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 5 Power-Transistor |
| Polarity / Channel Type | N-Channel |
| Drain-Source Voltage (VDS) Max | 150 V |
| Continuous Drain Current (ID) at Ta | 7 A |
| Continuous Drain Current (ID) at Tc | 44 A |
| Power Dissipation (PD) at Ta | 2.5 W |
| Power Dissipation (PD) at Tc | 100 W |
| RDS(on) Max at VGS=10V | 22 mΩ |
| Gate Threshold Voltage (VGS(th)) | 4.6 V (typ at 46 µA) |
| Total Gate Charge (Qg) | 14.4 nC at 10 V |
| Input Capacitance (Ciss) | 14 pF |
| Output Capacitance (Coss) | 340 pF |
| 출력 구성 | Single N-Channel |
| 패키지 | PG-TSON-8-5 (Source-Down) |
| 실장 유형 | Surface Mount |
| 동작 온도 | -55C to +150C (junction) |
| Technology | Trench MOSFET (OptiMOS 5) |
| RoHS 상태 | Compliant |
| MSL 레벨 | 1 |
IQE220N15NM5ATMA1 핀 구성
| 핀 1 | Source — Source terminal (low-side return path) |
| 핀 2 | Source — Source terminal (low-side return path) |
| 핀 3 | Source — Source terminal (low-side return path) |
| 핀 4 | Source — Source terminal (low-side return path) |
| 핀 5 | Drain — Drain terminal (high-voltage switched node) |
| 핀 6 | Drain — Drain terminal (high-voltage switched node) |
| 핀 7 | Drain — Drain terminal (high-voltage switched node) |
| 핀 8 | Gate — Gate control input (drive with 10 V VGS for full enhancement) |
안전 동작 영역 (DC, Tc=25C)
일반적인 애플리케이션
IQE220N15NM5ATMA1 적합 용도: 7 애플리케이션s: 48V Telecom Point-of-Load (POL) Converters, Synchronous Rectification in SMPS, Hot-Swap and eFuse Controllers on 80-100V Rails, Motor Drive Half-Bridges and H-Bridges, Industrial e-Mobility Auxiliary Converters, Solar Micro-Inverters and Power Optimizers, Battery Management and Battery Protection.
48V Telecom Point-of-Load (POL) Converters
The IQE220N15NM5ATMA1 fits 48V telecom POL converters because its 150 V VDS provides ample margin above the nominal 48 V input plus transient spikes up to 80-100 V, and the 22 mΩ RDS(on) at VGS = 10 V minimizes conduction loss. The Source-Down PG-TSON-8-5 package enables dense placement on multi-phase POL modules by sinking heat directly into the PCB copper plane rather than the package top, keeping junction temperatures low at 10-20 A per phase. Used as a synchronous rectifier on the secondary side, the device's 14.4 nC Qg enables 200 kHz+ switching with manageable driver losses.
추천
Synchronous Rectification in SMPS
The IQE220N15NM5ATMA1 is well-suited for SMPS synchronous rectification on 100-120 V DC bus converters (e.g., 220 V AC PFC output stages). Its 150 V VDS handles the rectified bus plus ringing margin, while the low Qg × RDS(on) FOM (≈ 318 mΩ·nC) ensures high efficiency at 100 kHz hard-switching. The Source-Down package simplifies PCB layout by placing the thermal pad on the source side, allowing direct via-fanout to inner copper layers for improved thermal dissipation in compact server and industrial SMPS designs.
추천
Hot-Swap and eFuse Controllers on 80-100V Rails
The IQE220N15NM5ATMA1's 44 A continuous drain current at Tc and 150 V VDS rating cover industrial 80-100 V distribution rails, 48 V telecom battery plants, and -48 V/-60 V telecom ORing switches. As the pass-MOSFET in a hot-swap controller, the low 22 mΩ RDS(on) minimizes steady-state voltage drop and power dissipation, while the 14.4 nC Qg enables sub-microsecond fault-current interruption when paired with a hot-swap controller IC. The Source-Down package delivers the thermal margin needed for inrush current peaks during board insertion.
추천
Motor Drive Half-Bridges and H-Bridges
For 48-96 V BLDC and brushed DC motor drives, the IQE220N15NM5ATMA1 serves as the low-side or high-side switch in half-bridge and H-bridge topologies. Its 150 V VDS provides headroom over 80 V bus transients, and the Source-Down PG-TSON-8-5 package allows tight side-by-side layout of high-side and low-side FETs with a shared top-side copper plane, minimizing parasitic inductance in the switching loop. The 14.4 nC Qg reduces gate-driver power budget, enabling compact integrated half-bridge driver ICs to switch at 50-100 kHz PWM.
추천
Industrial e-Mobility Auxiliary Converters
In 48 V mild-hybrid automotive auxiliary converters, e-bike/e-scooter traction inverters, and 96 V industrial e-mobility battery systems, the IQE220N15NM5ATMA1 handles switching on the 80-100 V DC bus. The Source-Down PG-TSON-8-5 package reduces thermal resistance versus standard TSON-8, allowing sustained high-current operation in space-constrained enclosures. Designers can parallel multiple devices on a shared PCB copper pour for higher current capability without changing the land pattern.
추천
Solar Micro-Inverters and Power Optimizers
The IQE220N15NM5ATMA1 fits solar micro-inverter and module-level power optimizer applications where input voltages can reach 80-100 V from series-connected PV modules. Its 150 V VDS provides safety margin over worst-case open-circuit voltage at -25°C, and the low RDS(on) × Qg FOM enables high-frequency flyback or HERIC inverter topologies. The Source-Down package's PCB-direct thermal path eliminates the need for bulky heatsinks in outdoor solar junction boxes, where ambient temperatures can exceed 70°C.
추천
Battery Management and Battery Protection
In 96-110 V lithium battery packs (e-mobility, energy storage), the IQE220N15NM5ATMA1 serves as a low-side disconnect FET or pre-charge MOSFET in the battery management system. Its 150 V VDS handles the fully-charged stack plus transient spikes during load dump, and the 22 mΩ RDS(on) minimizes steady-state losses. The Source-Down package's Source-Down thermal pad simplifies PCB layout in compact battery packs where copper is the primary heatsink.
추천
추천 제품 요약
엔지니어링 참조 데이터: IQE220N15NM5ATMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IQE220N15NM5CGSCATMA1 | IPTG025N15NM6ATMA1 | IQE065N10NM5CGSCATMA1 |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TSON-8-5 (Source-Down) | PG-TSON-8-5 (Source-Down) - same | PG-TSON-8-5 - same | PG-TSON-8-5 - same |
| Drain-Source Voltage (VDS) | 150 V | 150 V | 150 V | 100 V |
| RDS(on) at VGS=10V | 22 mΩ | 22 mΩ | 25 mΩ | 6.5 mΩ |
| Technology / Generation | OptiMOS 5 | OptiMOS 5 | OptiMOS 6 | OptiMOS 5 |
주요 차별점
- Source-Down PG-TSON-8-5 package delivers superior PCB cooling (vs Standard TSON-8 N-channel MOSFETs)
- Lower RDS(on) than equivalent 150 V Source-Down alternatives (vs IPTG025N15NM6ATMA1 (25 mΩ))
- OptiMOS 5 generation with optimized FOM (vs Older OptiMOS 3 / 4 trench MOSFET generations)
설계 노트
Estimated: at 22 mΩ RDS(on) and 30 A continuous drain current, conduction loss is approximately 19.8 W, and total power dissipation at Tc=80°C may exceed 100 W. The Source-Down PG-TSON-8-5 package achieves a lower junction-to-PCB thermal resistance than standard TSON-8 because the source-side thermal pad connects directly to top-side copper pours. Design at least 100 mm² of top-side copper on the source pad, plus thermal vias to inner planes, to maintain junction temperature below 150°C. Without adequate copper, the part may exceed safe operating area within seconds.
The Source-Down package MIRRORS the standard TSON-8 land pattern - the source pad is on the bottom (PCB side) and the drain pads are on top of the package. Do NOT use a standard TSON-8 PCB footprint with the IQE220N15NM5ATMA1; the source and drain pads will be reversed. Refer to Infineon's Source-Down land pattern application note before PCB layout. Place the gate drive loop (gate resistor + driver) within 5 mm of the gate pin to minimize parasitic inductance that causes gate ringing.
Do not exceed VGS = ±20 V absolute maximum; use a gate-source Zener clamp (e.g., 16 V) if ringing exceeds this. Verify VGS(th) at the lowest expected operating temperature - at -40°C, VGS(th) may rise to 5.5 V, requiring a 12 V gate drive to guarantee full enhancement. The body diode reverse recovery is slow; for high-frequency bridge topologies, add an anti-parallel Schottky or synchronous channel to avoid dead-time losses. Static electricity can puncture the gate oxide - handle parts with ESD precautions.
규정 준수 정보
RoHS and halogen-free compliant per Infineon product page. Not AEC-Q100 qualified - the part is targeted at telecom, industrial, and consumer applications, not automotive. For automotive-grade 150 V Source-Down MOSFETs in the same family, contact Infineon for IAUZ-series or IAUC-series variants.
