2EDL5023U2DXTMA1 vs 2EDL900G3XTMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 2EDL5023U2DXTMA1 disebabkan oleh Infineon dan 2EDL900G3XTMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 2EDL5023U2DXTMA1 2EDL900G3XTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Configuration Half-Bridge (High-Side + Low-Side) —
Driver Type Non-Inverting —
Bilangan Output 2 —
Bootstrap Voltage Rating 120 V —
Peak Gate Drive Current 3 A (typical sink/source) —
Number of Channels 1 (Half-Bridge) 2 (high-side + low-side)
Input Logic TTL-compatible —
Input Voltage (VDD) 5 V (gate drive supply) —
Enable Pin (EN) Active-High (logic high or left open enables) —
PWM Inputs HI (high-side), LI (low-side) —
Ground Return VSS —
Kemasan PG-TSNP-12-5 TSNP-16 (3x3 mm) with exposed pad
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -40C to +125C (typical industrial range) —
Status RoHS Compliant Compliant
Tape and Reel Packaging Yes —
Product Type — Dual-channel level-shift gate driver IC
Topology Supported — Half-bridge, high-side, low-side
Isolation Type — Junction isolation (JI), 120 V
Peak Source Current — 4 A
Peak Sink Current — 6 A
Drive Output Voltage Range — 4 V to 16 V
Supply Voltage (VDD/VBS) — 4 V to 16 V
Switching Device Supported — Si MOSFET, enhancement-mode GaN FET
Configurable Deadtime — Yes (programmable)
Integrated Current Sense Amplifier — Yes
PWM Modes — Tri-state, HSCC HS, HSCC LS, Hi/Li, Hi/Li inverted
Input Logic Compatibility — 3.3 V / 5 V / TTL (per datasheet)
Gambaran Suhu Operasi — -40 C to +125 C
Aras MSL — 1

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