2EDL5023U2DXTMA1 vs 2EDL900G3XTMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng 2EDL5023U2DXTMA1 sa pamamagitan ng Infineon at 2EDL900G3XTMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
2EDL5023U2DXTMA1 - 120V Boot, 3A Half-Bridge Gate Driver | Infineon
2EDL5023U2DXTMA1 ✓ NakahandaInfineon
2EDL900G3XTMA1 - 120V Dual Half-Bridge Gate Driver 4A/6A | Infineon
2EDL900G3XTMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | 2EDL5023U2DXTMA1 | 2EDL900G3XTMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | Power MOSFET Drivers | Power MOSFET Drivers |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Driver Configuration | Half-Bridge (High-Side + Low-Side) | — |
| Driver Type | Non-Inverting | — |
| Bilang ng Outputs | 2 | — |
| Bootstrap Voltage Rating | 120 V | — |
| Peak Gate Drive Current | 3 A (typical sink/source) | — |
| Number of Channels | 1 (Half-Bridge) | 2 (high-side + low-side) |
| Input Logic | TTL-compatible | — |
| Input Voltage (VDD) | 5 V (gate drive supply) | — |
| Enable Pin (EN) | Active-High (logic high or left open enables) | — |
| PWM Inputs | HI (high-side), LI (low-side) | — |
| Ground Return | VSS | — |
| Packhaging | PG-TSNP-12-5 | TSNP-16 (3x3 mm) with exposed pad |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | -40C to +125C (typical industrial range) | — |
| Tindminan RoHS | Compliant | Compliant |
| Tape and Reel Packaging | Yes | — |
| Product Type | — | Dual-channel level-shift gate driver IC |
| Topology Supported | — | Half-bridge, high-side, low-side |
| Isolation Type | — | Junction isolation (JI), 120 V |
| Peak Source Current | — | 4 A |
| Peak Sink Current | — | 6 A |
| Drive Output Voltage Range | — | 4 V to 16 V |
| Supply Voltage (VDD/VBS) | — | 4 V to 16 V |
| Switching Device Supported | — | Si MOSFET, enhancement-mode GaN FET |
| Configurable Deadtime | — | Yes (programmable) |
| Integrated Current Sense Amplifier | — | Yes |
| PWM Modes | — | Tri-state, HSCC HS, HSCC LS, Hi/Li, Hi/Li inverted |
| Input Logic Compatibility | — | 3.3 V / 5 V / TTL (per datasheet) |
| Hanay ng Temperature na Operasyon | — | -40 C to +125 C |
| Level ng MSL | — | 1 |