2EDL5023U2DXTMA1 vs 2EDL900G3XTMA1 比較

詳細並排比較 2EDL5023U2DXTMA1 由 Infineon 與 2EDL900G3XTMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 2EDL5023U2DXTMA1 2EDL900G3XTMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Driver Configuration Half-Bridge (High-Side + Low-Side) —
Driver Type Non-Inverting —
輸出數量 2 —
Bootstrap Voltage Rating 120 V —
Peak Gate Drive Current 3 A (typical sink/source) —
Number of Channels 1 (Half-Bridge) 2 (high-side + low-side)
Input Logic TTL-compatible —
Input Voltage (VDD) 5 V (gate drive supply) —
Enable Pin (EN) Active-High (logic high or left open enables) —
PWM Inputs HI (high-side), LI (low-side) —
Ground Return VSS —
封裝 PG-TSNP-12-5 TSNP-16 (3x3 mm) with exposed pad
安裝類型 Surface Mount Surface Mount
工作溫度 -40C to +125C (typical industrial range) —
RoHS 狀態 Compliant Compliant
Tape and Reel Packaging Yes —
Product Type — Dual-channel level-shift gate driver IC
Topology Supported — Half-bridge, high-side, low-side
Isolation Type — Junction isolation (JI), 120 V
Peak Source Current — 4 A
Peak Sink Current — 6 A
Drive Output Voltage Range — 4 V to 16 V
Supply Voltage (VDD/VBS) — 4 V to 16 V
Switching Device Supported — Si MOSFET, enhancement-mode GaN FET
Configurable Deadtime — Yes (programmable)
Integrated Current Sense Amplifier — Yes
PWM Modes — Tri-state, HSCC HS, HSCC LS, Hi/Li, Hi/Li inverted
Input Logic Compatibility — 3.3 V / 5 V / TTL (per datasheet)
工作溫度範圍 — -40 C to +125 C
MSL 等級 — 1

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