BSS138LT1G-VB vs 2N7002LT1G Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS138LT1G-VB disebabkan oleh VBsemi Elec dan 2N7002LT1G disebabkan oleh onsemi. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

VBsemi Elec
BSS138LT1G-VB BSS138LT1G-VB - 50V 200mA N-Channel MOSFET | VBsemi

BSS138LT1G-VB - 50V 200mA N-Channel MOSFET | VBsemi

BSS138LT1G-VB ✓ Aktif

Pengandingan Spesifikasi

Parametr BSS138LT1G-VB 2N7002LT1G
Merek VBsemi Elec onsemi
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (Vdss) 50 V —
Continuous Drain Current (Id) 200 mA (Ta) —
Power Dissipation (Pd) 225 mW (Ta) —
Jenis Pemasangan Surface Mount Surface Mount
Kemasan SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Configuration Single FET Single FET
Gate Threshold Voltage (Vgs th) [DATA_NEEDED: gate threshold voltage] —
RDS(on) Max [DATA_NEEDED: RDS(on)] —
Drive Voltage [DATA_NEEDED: drive voltage] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
Suhu Operasi [DATA_NEEDED: operating temperature range] —
Status RoHS Compliant —
Manufacturer VBsemi Elec onsemi (ON Semiconductor)
Equivalent To onsemi BSS138LT1G —
Polarity — N-Channel
Channel Mode — Enhancement Mode
Drain-Source Voltage VDSS — 60 V
Continuous Drain Current ID — 115 mA (Tc)
Power Dissipation PD — 225 mW (Ta)
Maximum RDS(on) — 7.5 ohm @ VGS = 5 V
Bilangan Pin — 3
Kategori — Small Signal MOSFET
Technology — MOSFET
Lead Finish — [DATA_NEEDED: lead finish/plating]
Gambaran Suhu Operasi — [DATA_NEEDED: operating temperature range]
Packaging — [DATA_NEEDED: packaging type]

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