BSS138LT1G-VB vs 2N7002LT1G 比較

詳細並排比較 BSS138LT1G-VB 由 VBsemi Elec 與 2N7002LT1G 由 onsemi. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

VBsemi Elec
BSS138LT1G-VB BSS138LT1G-VB - 50V 200mA N-Channel MOSFET | VBsemi

BSS138LT1G-VB - 50V 200mA N-Channel MOSFET | VBsemi

BSS138LT1G-VB ✓ 啟用中
onsemi
2N7002LT1G 2N7002LT1G - 60V N-Channel MOSFET SOT-23 | onsemi

2N7002LT1G - 60V N-Channel MOSFET SOT-23 | onsemi

2N7002LT1G ✓ 啟用中

規格比較

參數 BSS138LT1G-VB 2N7002LT1G
品牌 VBsemi Elec onsemi
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
電晶體類型 N-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (Vdss) 50 V —
Continuous Drain Current (Id) 200 mA (Ta) —
Power Dissipation (Pd) 225 mW (Ta) —
安裝類型 Surface Mount Surface Mount
封裝 SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Configuration Single FET Single FET
Gate Threshold Voltage (Vgs th) [DATA_NEEDED: gate threshold voltage] —
RDS(on) Max [DATA_NEEDED: RDS(on)] —
Drive Voltage [DATA_NEEDED: drive voltage] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
工作溫度 [DATA_NEEDED: operating temperature range] —
RoHS 狀態 Compliant —
Manufacturer VBsemi Elec onsemi (ON Semiconductor)
Equivalent To onsemi BSS138LT1G —
Polarity — N-Channel
Channel Mode — Enhancement Mode
Drain-Source Voltage VDSS — 60 V
Continuous Drain Current ID — 115 mA (Tc)
Power Dissipation PD — 225 mW (Ta)
Maximum RDS(on) — 7.5 ohm @ VGS = 5 V
腳位數 — 3
類別 — Small Signal MOSFET
Technology — MOSFET
Lead Finish — [DATA_NEEDED: lead finish/plating]
工作溫度範圍 — [DATA_NEEDED: operating temperature range]
Packaging — [DATA_NEEDED: packaging type]

資料表與資源

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