CSD19534Q5A vs BSC520N15NS3 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci CSD19534Q5A disebabkan oleh Texas Instruments dan BSC520N15NS3 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Texas Instruments
CSD19534Q5A - 100V NexFET N-Channel MOSFET | Texas Instruments
CSD19534Q5A ✓ Aktif
Pengandingan Spesifikasi
| Parametr | CSD19534Q5A | BSC520N15NS3 |
|---|---|---|
| Merek | Texas Instruments | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | NexFET (Power MOSFET) | OptiMOS 3, N-channel trench MOSFET |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc | 44 A | — |
| On-Resistance RDS(on) | 12.6 mΩ (typ per datasheet description) | — |
| Power Dissipation (Ta) | 3.2 W | — |
| Power Dissipation (Tc) | 63 W | — |
| Kemasan | 8-VSONP (5x6 mm) with exposed pad | PG-TDSON-8-5 (SuperSO8, 5x6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | [DATA_NEEDED: operating temperature range] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg at VGS=10V] | — |
| Aras MSL | 1-260C-UNLIM | 1 |
| Status RoHS | Compliant | Compliant |
| Kiraan Pin | 8 | — |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID, TC=25C) | — | 21 A |
| Pulsed Drain Current (IDM) | — | 84 A |
| On-State Resistance RDS(on) max (VGS=10V) | — | 52 mOhm |
| Gate-Source Voltage VGS max | — | +/- 20 V |
| Gate Threshold Voltage VGS(th) typ | — | 3 V |
| Power Dissipation (TC=25C) | — | 57 W |
| Suhu Hubungan Operasi | — | -55C to +150C |
| Avalanche Energy Rated | — | Yes (single-pulse) |
| Body Diode | — | Intrinsic, avalanche-rated |