CSD19534Q5A vs BSC520N15NS3 比較
詳細並排比較 CSD19534Q5A 由 Texas Instruments 與 BSC520N15NS3 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | CSD19534Q5A | BSC520N15NS3 |
|---|---|---|
| 品牌 | Texas Instruments | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Technology | NexFET (Power MOSFET) | OptiMOS 3, N-channel trench MOSFET |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc | 44 A | — |
| On-Resistance RDS(on) | 12.6 mΩ (typ per datasheet description) | — |
| Power Dissipation (Ta) | 3.2 W | — |
| Power Dissipation (Tc) | 63 W | — |
| 封裝 | 8-VSONP (5x6 mm) with exposed pad | PG-TDSON-8-5 (SuperSO8, 5x6 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | [DATA_NEEDED: operating temperature range] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg at VGS=10V] | — |
| MSL 等級 | 1-260C-UNLIM | 1 |
| RoHS 狀態 | Compliant | Compliant |
| 腳位數 | 8 | — |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID, TC=25C) | — | 21 A |
| Pulsed Drain Current (IDM) | — | 84 A |
| On-State Resistance RDS(on) max (VGS=10V) | — | 52 mOhm |
| Gate-Source Voltage VGS max | — | +/- 20 V |
| Gate Threshold Voltage VGS(th) typ | — | 3 V |
| Power Dissipation (TC=25C) | — | 57 W |
| 工作接面溫度 | — | -55C to +150C |
| Avalanche Energy Rated | — | Yes (single-pulse) |
| Body Diode | — | Intrinsic, avalanche-rated |