CSD19534Q5A vs BSC520N15NS3 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng CSD19534Q5A sa pamamagitan ng Texas Instruments at BSC520N15NS3 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Texas Instruments
CSD19534Q5A - 100V NexFET N-Channel MOSFET | Texas Instruments
CSD19534Q5A ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | CSD19534Q5A | BSC520N15NS3 |
|---|---|---|
| Brand | Texas Instruments | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | — |
| Technology | NexFET (Power MOSFET) | OptiMOS 3, N-channel trench MOSFET |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc | 44 A | — |
| On-Resistance RDS(on) | 12.6 mΩ (typ per datasheet description) | — |
| Power Dissipation (Ta) | 3.2 W | — |
| Power Dissipation (Tc) | 63 W | — |
| Packhaging | 8-VSONP (5x6 mm) with exposed pad | PG-TDSON-8-5 (SuperSO8, 5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg at VGS=10V] | — |
| Level ng MSL | 1-260C-UNLIM | 1 |
| Tindminan RoHS | Compliant | Compliant |
| Bilang ng Pin | 8 | — |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID, TC=25C) | — | 21 A |
| Pulsed Drain Current (IDM) | — | 84 A |
| On-State Resistance RDS(on) max (VGS=10V) | — | 52 mOhm |
| Gate-Source Voltage VGS max | — | +/- 20 V |
| Gate Threshold Voltage VGS(th) typ | — | 3 V |
| Power Dissipation (TC=25C) | — | 57 W |
| Temperature ng Junction na Operasyon | — | -55C to +150C |
| Avalanche Energy Rated | — | Yes (single-pulse) |
| Body Diode | — | Intrinsic, avalanche-rated |