H5AN4G6NBJR-UHC vs MT40A256M16GE-083E Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN4G6NBJR-UHC disebabkan oleh SK hynix dan MT40A256M16GE-083E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
MT40A256M16GE-083E - DDR4 4Gb 256Mx16 2400MHz DRAM | Micron
MT40A256M16GE-083E ✗ Akhir HayatPengandingan Spesifikasi
| Parametr | H5AN4G6NBJR-UHC | MT40A256M16GE-083E |
|---|---|---|
| Merek | SK hynix | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Akhir Hidup |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 4 Gbit | — |
| Organisasi | 256M x 16 | 256M x 16 |
| Clock Frequency | 1.6 GHz | 1200 MHz (DDR4-2400) |
| Supply Voltage (VDD) | 1.14 V to 1.26 V | — |
| Technology | CMOS | CMOS DRAM |
| Suhu Operasi | -40C to +95C | [DATA_NEEDED: operating temperature range] |
| Kemasan | FBGA-96 (PBGA-96) | 96-ball FBGA, 9 x 14 mm |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Self Refresh | Auto self-refresh | — |
| Data Mask Function | Yes (DM) | — |
| Asynchronous Reset | Yes (RESET_n) | — |
| On-Die Termination | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes (command/address CRC) | — |
| Status RoHS | Compliant | — |
| Density | — | 4 Gbit |
| Tegangan Pemberi Arus | — | 1.2 V |
| Antaramuka | — | Parallel |
| ECCN | — | EAR99 |
| Country of Origin | — | China |
| Boson Bebas | — | Compliant |
| Lead Free | — | Yes |
| Introduction Date | — | August 2017 |
| Lifecycle | — | Obsolete / End of Life (per distributor cross-reference data) |
| Latensi CAS | — | [DATA_NEEDED: CAS latency at DDR4-2400] |
| Refresh | — | [DATA_NEEDED: refresh rate] |