H5AN4G6NBJR-UHC vs MT40A256M16GE-083E 比較
詳細並排比較 H5AN4G6NBJR-UHC 由 SK hynix 與 MT40A256M16GE-083E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Micron Technology
MT40A256M16GE-083E - DDR4 4Gb 256Mx16 2400MHz DRAM | Micron
MT40A256M16GE-083E ✗ 停產規格比較
| 參數 | H5AN4G6NBJR-UHC | MT40A256M16GE-083E |
|---|---|---|
| 品牌 | SK hynix | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 停產終止 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| 記憶體容量 | 4 Gbit | — |
| 組織 | 256M x 16 | 256M x 16 |
| Clock Frequency | 1.6 GHz | 1200 MHz (DDR4-2400) |
| Supply Voltage (VDD) | 1.14 V to 1.26 V | — |
| Technology | CMOS | CMOS DRAM |
| 工作溫度 | -40C to +95C | [DATA_NEEDED: operating temperature range] |
| 封裝 | FBGA-96 (PBGA-96) | 96-ball FBGA, 9 x 14 mm |
| 安裝類型 | Surface Mount | Surface Mount |
| Self Refresh | Auto self-refresh | — |
| Data Mask Function | Yes (DM) | — |
| Asynchronous Reset | Yes (RESET_n) | — |
| On-Die Termination | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes (command/address CRC) | — |
| RoHS 狀態 | Compliant | — |
| Density | — | 4 Gbit |
| 供應電壓 | — | 1.2 V |
| 介面 | — | Parallel |
| ECCN | — | EAR99 |
| Country of Origin | — | China |
| 無鹵素 | — | Compliant |
| Lead Free | — | Yes |
| Introduction Date | — | August 2017 |
| Lifecycle | — | Obsolete / End of Life (per distributor cross-reference data) |
| CAS 延遲 | — | [DATA_NEEDED: CAS latency at DDR4-2400] |
| Refresh | — | [DATA_NEEDED: refresh rate] |