H5AN4G8NBJR-UHC vs K4A4G085WD-BCTD Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN4G8NBJR-UHC disebabkan oleh SK hynix dan K4A4G085WD-BCTD disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A4G085WD-BCTD - 4Gb DDR4 SDRAM 512Mx8 2666Mbps | Samsung
K4A4G085WD-BCTD ✓ AktifPengandingan Spesifikasi
| Parametr | H5AN4G8NBJR-UHC | K4A4G085WD-BCTD |
|---|---|---|
| Merek | SK hynix | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gb |
| Organisasi | 512M x 8 | 512M x 8 |
| Kadar Data | 2400 Mbps (PC2400) | 2666 Mbps/pin |
| Tegangan Pemberi Arus | 1.2 V | 1.2 V |
| Antaramuka | DDR4 (JEDEC) | DDR4 (JEDEC-compatible) |
| Kemasan | TFBGA-78 (11 x 7.5 mm) | 78-ball FBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | CMOS DRAM | — |
| Lifecycle Code | Active | — |
| Status RoHS | Compliant (Rohs Code: Yes) | [DATA_NEEDED: RoHS compliance status] |
| REACH Compliance | Compliant | — |
| Manufacturer | SK Hynix Inc. | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| Latensi CAS | [DATA_NEEDED: CAS latency for -UHC speed bin] | — |
| Refresh | [DATA_NEEDED: refresh rate 1x/2x/4x support] | — |
| Die Generation | — | D-die |
| Ball Pitch | — | 0.8 mm |
| Speed Class | — | DDR4-2666 (PC4-21300) |
| Bank Architecture | — | DDR4 bank-group architecture |
| On-Die Termination (ODT) | — | Yes |
| DLL | — | Yes |
| Aras MSL | — | [DATA_NEEDED: moisture sensitivity level] |