H5AN4G8NBJR-UHC vs K4A4G085WD-BCTD Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN4G8NBJR-UHC sa pamamagitan ng SK hynix at K4A4G085WD-BCTD sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A4G085WD-BCTD - 4Gb DDR4 SDRAM 512Mx8 2666Mbps | Samsung
K4A4G085WD-BCTD ✓ NakahandaPagsanggunian na paghahambing
| Parametro | H5AN4G8NBJR-UHC | K4A4G085WD-BCTD |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gb |
| Organisasyon | 512M x 8 | 512M x 8 |
| Rate ng Data | 2400 Mbps (PC2400) | 2666 Mbps/pin |
| Volte ng Pagbibigay | 1.2 V | 1.2 V |
| Interface | DDR4 (JEDEC) | DDR4 (JEDEC-compatible) |
| Packhaging | TFBGA-78 (11 x 7.5 mm) | 78-ball FBGA |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | CMOS DRAM | — |
| Lifecycle Code | Active | — |
| Tindminan RoHS | Compliant (Rohs Code: Yes) | [DATA_NEEDED: RoHS compliance status] |
| REACH Compliance | Compliant | — |
| Manufacturer | SK Hynix Inc. | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| Latensya ng CAS | [DATA_NEEDED: CAS latency for -UHC speed bin] | — |
| Refresh | [DATA_NEEDED: refresh rate 1x/2x/4x support] | — |
| Die Generation | — | D-die |
| Ball Pitch | — | 0.8 mm |
| Speed Class | — | DDR4-2666 (PC4-21300) |
| Bank Architecture | — | DDR4 bank-group architecture |
| On-Die Termination (ODT) | — | Yes |
| DLL | — | Yes |
| Level ng MSL | — | [DATA_NEEDED: moisture sensitivity level] |