H5AN8G8NCJR-PBC vs K4A8G165WC-BCRC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G8NCJR-PBC disebabkan oleh SK hynix dan K4A8G165WC-BCRC disebabkan oleh Samsung Electro-Mechanics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electro-Mechanics
K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WC-BCRC ✓ AktifPengandingan Spesifikasi
| Parametr | H5AN8G8NCJR-PBC | K4A8G165WC-BCRC |
|---|---|---|
| Merek | SK hynix | Samsung Electro-Mechanics |
| Kategori | Memory ICs | EEPROM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | — | In Stock |
| Harga Unit (USD) | — | $19.69 |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 8 Gb (1 GB) | 8 Gbit |
| Organisasi | 1G x 8 (x8) | 512M x 16 |
| Supply Voltage (VDD) | 1.2 V | — |
| Interface Voltage (VDDQ) | 1.2 V (SSTL12) | — |
| Kadar Data | [DATA_NEEDED: data rate for -PBC speed grade (Mbps/MT/s)] | 2400 Mbps |
| Kemasan | 78-ball FBGA | 96-FBGA (TFBGA) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Architecture | CMOS, fully synchronous, dual-edge clocked | — |
| Bank Structure | 8 internal banks, bank-group architecture | — |
| Burst Length | BL8 | — |
| Ciri-ciri | ODT, DM, DQS strobes, programmable CAS latency, self-refresh | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Die Revision Family | CJR (H5AN8G8NCJR-xxC) | — |
| Status RoHS | Lead-Free & Halogen-Free | Compliant |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | 0 C to +95 C |
| Refresh | Auto-refresh and self-refresh | — |
| Typical Applications | PC/server main memory, embedded solder-down memory | — |
| Clock Frequency | — | 1333 MHz |
| Tegangan Pemberi Arus | — | 1.2 V (1.14 V to 1.26 V) |
| Antaramuka | — | Parallel, 16-bit DDR |
| Standby Current (Idle) | — | 2 mA |
| Operating Current | — | 64 mA |
| Die Generation | — | C-die |
| Memory Format | — | DRAM |