H5AN8G8NCJR-PBC vs K4A8G165WC-BCRC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN8G8NCJR-PBC sa pamamagitan ng SK hynix at K4A8G165WC-BCRC sa pamamagitan ng Samsung Electro-Mechanics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electro-Mechanics
K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WC-BCRC ✓ NakahandaPagsanggunian na paghahambing
| Parametro | H5AN8G8NCJR-PBC | K4A8G165WC-BCRC |
|---|---|---|
| Brand | SK hynix | Samsung Electro-Mechanics |
| Kategorya | Memory ICs | EEPROM |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | — | In Stock |
| Presyo ng Yunit (USD) | — | $19.69 |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Laki ng Memory | 8 Gb (1 GB) | 8 Gbit |
| Organisasyon | 1G x 8 (x8) | 512M x 16 |
| Supply Voltage (VDD) | 1.2 V | — |
| Interface Voltage (VDDQ) | 1.2 V (SSTL12) | — |
| Rate ng Data | [DATA_NEEDED: data rate for -PBC speed grade (Mbps/MT/s)] | 2400 Mbps |
| Packhaging | 78-ball FBGA | 96-FBGA (TFBGA) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Architecture | CMOS, fully synchronous, dual-edge clocked | — |
| Bank Structure | 8 internal banks, bank-group architecture | — |
| Burst Length | BL8 | — |
| Mga Karakteristika | ODT, DM, DQS strobes, programmable CAS latency, self-refresh | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Die Revision Family | CJR (H5AN8G8NCJR-xxC) | — |
| Tindminan RoHS | Lead-Free & Halogen-Free | Compliant |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | 0 C to +95 C |
| Refresh | Auto-refresh and self-refresh | — |
| Typical Applications | PC/server main memory, embedded solder-down memory | — |
| Clock Frequency | — | 1333 MHz |
| Volte ng Pagbibigay | — | 1.2 V (1.14 V to 1.26 V) |
| Interface | — | Parallel, 16-bit DDR |
| Standby Current (Idle) | — | 2 mA |
| Operating Current | — | 64 mA |
| Die Generation | — | C-die |
| Memory Format | — | DRAM |