IAUS300N08S5N012T vs IAUS300N08S5N012 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUS300N08S5N012T disebabkan oleh Infineon dan IAUS300N08S5N012 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUS300N08S5N012T IAUS300N08S5N012
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number IAUS300N08S5N012T —
Technology OptiMOS 5 OptiMOS 5 planar trench
Drain-Source Voltage (V_DS) 80 V —
On-State Resistance (R_DS(on)) 1.2 mΩ max @ V_GS = 10 V —
Continuous Drain Current (I_D) 300 A (Tj) —
Power Dissipation (P_D) 375 W (Tc) —
Thermal Resistance Junction-to-Case (R_thJC) 0.4 K/W —
Maximum Chip Current 400 A at 25°C (chip-limited) —
Kemasan PG-HDSOP-16-2 (TOLT, topside-cooled) PG-HSOG-8-1 (Surface Mount)
Jenis Pemasangan Surface Mount Surface Mount
Channel Polarity N-Channel —
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
Marking Code 5N08012 —
Gambaran Suhu Operasi [DATA_NEEDED: full min/max operating temperature range] -55°C to +175°C
Status RoHS Compliant (per Infineon product page) —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: typical threshold voltage] —
Total Gate Charge (Q_G) [DATA_NEEDED: typical total gate charge] —
Series — OptiMOS 5
FET Type — N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID) at TC — 300 A
On-Resistance R<sub>DS(on)</sub> Max at VGS=10V — 1.2 mΩ typical
Gate-Source Threshold Voltage VGS(th) — 3.8 V at 275 µA
Power Dissipation (PD) at TC — 375 W
Aras MSL — MSL1 (up to 260°C peak reflow)
RoHS Compliance — RoHS compliant (Green product)
Avalanche Rating — 100% Avalanche tested
Terminals — 8

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