IAUS300N08S5N012T vs IAUS300N08S5N012 Karşılaştırma

Ayrıntılı yan yana karşılaştırma IAUS300N08S5N012T tarafından Infineon ve IAUS300N08S5N012 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre IAUS300N08S5N012T IAUS300N08S5N012
Marka Infineon Infineon
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number IAUS300N08S5N012T —
Technology OptiMOS 5 OptiMOS 5 planar trench
Drain-Source Voltage (V_DS) 80 V —
On-State Resistance (R_DS(on)) 1.2 mΩ max @ V_GS = 10 V —
Continuous Drain Current (I_D) 300 A (Tj) —
Power Dissipation (P_D) 375 W (Tc) —
Thermal Resistance Junction-to-Case (R_thJC) 0.4 K/W —
Maximum Chip Current 400 A at 25°C (chip-limited) —
Paket PG-HDSOP-16-2 (TOLT, topside-cooled) PG-HSOG-8-1 (Surface Mount)
Montaj Türü Surface Mount Surface Mount
Channel Polarity N-Channel —
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
Marking Code 5N08012 —
İşletim Sıcaklığı Aralığı [DATA_NEEDED: full min/max operating temperature range] -55°C to +175°C
RoHS Durumu Compliant (per Infineon product page) —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: typical threshold voltage] —
Total Gate Charge (Q_G) [DATA_NEEDED: typical total gate charge] —
Series — OptiMOS 5
FET Type — N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID) at TC — 300 A
On-Resistance R<sub>DS(on)</sub> Max at VGS=10V — 1.2 mΩ typical
Gate-Source Threshold Voltage VGS(th) — 3.8 V at 275 µA
Power Dissipation (PD) at TC — 375 W
MSL Seviyesi — MSL1 (up to 260°C peak reflow)
RoHS Compliance — RoHS compliant (Green product)
Avalanche Rating — 100% Avalanche tested
Terminals — 8

Dökümanlar & Kaynaklar

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