IPD60R1K0PFD7SAUMA1 vs IPN70R2K0P7SATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD60R1K0PFD7SAUMA1 disebabkan oleh Infineon dan IPN70R2K0P7SATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPD60R1K0PFD7SAUMA1 | IPN70R2K0P7SATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | CoolMOS PFD7 Superjunction (SJ) MOSFET | Superjunction (SJ) N-Channel MOSFET |
| Polarity / Channel Type | N-Channel Enhancement Mode | N-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | 600 V | 700 V |
| Continuous Drain Current (ID) at TC | 4.7 A | — |
| Power Dissipation (PD) at TC | 26 W | — |
| Drain-Source On-Resistance (RDS(on)) | 1 Ω @ VGS=10V | — |
| Gate Threshold Voltage (VGS(th)) | ±20 V (max gate-source) | 3.5 V (typical) |
| Gate Charge (QG) | 6 nC @ VGS=10V | — |
| Output Capacitance (Coss) | 230 pF @ 400 V | — |
| Kemasan | PG-TO252-3 (DPAK, 2 leads + tab, SC-63) | PG-SOT223 (3 leads + tab) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55C to +150C (TJ) | -55 °C to +150 °C |
| Gate Drive Voltage (recommended) | 10 V (full enhancement) | — |
| Status RoHS | Compliant | Compliant (ROHS3) |
| Series | CoolMOS PFD7 consumer / superjunction | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | CoolMOS P7 |
| Continuous Drain Current (ID, Tc=25°C) | — | 3 A |
| Power Dissipation (PD, Tc=25°C) | — | 6 W |
| On-Resistance (RDS(on)) | — | 2.0 Ω (max, VGS=10 V) |
| Gate-Source Voltage (VGS max) | — | ±20 V |
| Integrated ESD Diode | — | Yes |
| Aras MSL | — | 1 (per JEDEC J-STD-020) |