IPD60R1K0PFD7SAUMA1 vs IPN70R2K0P7SATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD60R1K0PFD7SAUMA1 sa pamamagitan ng Infineon at IPN70R2K0P7SATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD60R1K0PFD7SAUMA1 - 600V 1Ω CoolMOS PFD7 | Infineon | DPAK
IPD60R1K0PFD7SAUMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IPD60R1K0PFD7SAUMA1 | IPN70R2K0P7SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Technology | CoolMOS PFD7 Superjunction (SJ) MOSFET | Superjunction (SJ) N-Channel MOSFET |
| Polarity / Channel Type | N-Channel Enhancement Mode | N-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | 600 V | 700 V |
| Continuous Drain Current (ID) at TC | 4.7 A | — |
| Power Dissipation (PD) at TC | 26 W | — |
| Drain-Source On-Resistance (RDS(on)) | 1 Ω @ VGS=10V | — |
| Gate Threshold Voltage (VGS(th)) | ±20 V (max gate-source) | 3.5 V (typical) |
| Gate Charge (QG) | 6 nC @ VGS=10V | — |
| Output Capacitance (Coss) | 230 pF @ 400 V | — |
| Packhaging | PG-TO252-3 (DPAK, 2 leads + tab, SC-63) | PG-SOT223 (3 leads + tab) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55C to +150C (TJ) | -55 °C to +150 °C |
| Gate Drive Voltage (recommended) | 10 V (full enhancement) | — |
| Tindminan RoHS | Compliant | Compliant (ROHS3) |
| Series | CoolMOS PFD7 consumer / superjunction | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | CoolMOS P7 |
| Continuous Drain Current (ID, Tc=25°C) | — | 3 A |
| Power Dissipation (PD, Tc=25°C) | — | 6 W |
| On-Resistance (RDS(on)) | — | 2.0 Ω (max, VGS=10 V) |
| Gate-Source Voltage (VGS max) | — | ±20 V |
| Integrated ESD Diode | — | Yes |
| Level ng MSL | — | 1 (per JEDEC J-STD-020) |