IPD60R1K0PFD7SAUMA1 vs IPN70R2K0P7SATMA1 Comparison

Detailed side-by-side comparison of IPD60R1K0PFD7SAUMA1 by Infineon and IPN70R2K0P7SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD60R1K0PFD7SAUMA1 IPD60R1K0PFD7SAUMA1 - 600V 1Ξ© CoolMOS PFD7 | Infineon | DPAK

IPD60R1K0PFD7SAUMA1 - 600V 1Ξ© CoolMOS PFD7 | Infineon | DPAK

IPD60R1K0PFD7SAUMA1 βœ“ Active
Infineon
IPN70R2K0P7SATMA1

IPN70R2K0P7SATMA1 - 700V CoolMOS P7 MOSFET, 3A | Infineon

IPN70R2K0P7SATMA1 βœ“ Active

Specification Comparison

Parameter IPD60R1K0PFD7SAUMA1 IPN70R2K0P7SATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.36 $0.38
Technology CoolMOS PFD7 Superjunction (SJ) MOSFET Superjunction (SJ) N-Channel MOSFET
Polarity / Channel Type N-Channel Enhancement Mode N-Channel Enhancement Mode
Drain-Source Voltage (VDS) 600 V 700 V
Continuous Drain Current (ID) at TC 4.7 A β€”
Power Dissipation (PD) at TC 26 W β€”
Drain-Source On-Resistance (RDS(on)) 1 Ξ© @ VGS=10V β€”
Gate Threshold Voltage (VGS(th)) Β±20 V (max gate-source) 3.5 V (typical)
Gate Charge (QG) 6 nC @ VGS=10V β€”
Output Capacitance (Coss) 230 pF @ 400 V β€”
Package PG-TO252-3 (DPAK, 2 leads + tab, SC-63) PG-SOT223 (3 leads + tab)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +150C (TJ) -55 Β°C to +150 Β°C
Gate Drive Voltage (recommended) 10 V (full enhancement) β€”
RoHS Status Compliant Compliant (ROHS3)
Series CoolMOS PFD7 consumer / superjunction β€”
Manufacturer β€” Infineon Technologies
Part Family β€” CoolMOS P7
Continuous Drain Current (ID, Tc=25Β°C) β€” 3 A
Power Dissipation (PD, Tc=25Β°C) β€” 6 W
On-Resistance (RDS(on)) β€” 2.0 Ξ© (max, VGS=10 V)
Gate-Source Voltage (VGS max) β€” Β±20 V
Integrated ESD Diode β€” Yes
MSL Level β€” 1 (per JEDEC J-STD-020)

Datasheets & Resources

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