IPD60R1K0PFD7SAUMA1 vs IPN70R2K0P7SATMA1 比較
詳細並排比較 IPD60R1K0PFD7SAUMA1 由 Infineon 與 IPN70R2K0P7SATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPD60R1K0PFD7SAUMA1 | IPN70R2K0P7SATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Technology | CoolMOS PFD7 Superjunction (SJ) MOSFET | Superjunction (SJ) N-Channel MOSFET |
| Polarity / Channel Type | N-Channel Enhancement Mode | N-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | 600 V | 700 V |
| Continuous Drain Current (ID) at TC | 4.7 A | — |
| Power Dissipation (PD) at TC | 26 W | — |
| Drain-Source On-Resistance (RDS(on)) | 1 Ω @ VGS=10V | — |
| Gate Threshold Voltage (VGS(th)) | ±20 V (max gate-source) | 3.5 V (typical) |
| Gate Charge (QG) | 6 nC @ VGS=10V | — |
| Output Capacitance (Coss) | 230 pF @ 400 V | — |
| 封裝 | PG-TO252-3 (DPAK, 2 leads + tab, SC-63) | PG-SOT223 (3 leads + tab) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55C to +150C (TJ) | -55 °C to +150 °C |
| Gate Drive Voltage (recommended) | 10 V (full enhancement) | — |
| RoHS 狀態 | Compliant | Compliant (ROHS3) |
| Series | CoolMOS PFD7 consumer / superjunction | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | CoolMOS P7 |
| Continuous Drain Current (ID, Tc=25°C) | — | 3 A |
| Power Dissipation (PD, Tc=25°C) | — | 6 W |
| On-Resistance (RDS(on)) | — | 2.0 Ω (max, VGS=10 V) |
| Gate-Source Voltage (VGS max) | — | ±20 V |
| Integrated ESD Diode | — | Yes |
| MSL 等級 | — | 1 (per JEDEC J-STD-020) |