IRF540 vs IRF540NSTRLPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF540 disebabkan oleh STMicroelectronics dan IRF540NSTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF540 | IRF540NSTRLPBF |
|---|---|---|
| Merek | STMicroelectronics | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (VDSS) | 100 V | — |
| Continuous Drain Current (ID) | 22 A (Tc) | — |
| Power Dissipation (PD) | 85 W (Tc) | — |
| RDS(on) Typical | 0.050 Ohm | — |
| RDS(on) Maximum at 10 V Gate Drive | 77 mOhm (family typ.) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Total Gate Charge] | — |
| Suhu Hubungan Operasi | -55C to +175C | — |
| Avalanche Rating | Repetitive avalanche rated, 100% avalanche tested, data at 100C | — |
| Kemasan | TO-220 (through hole) | D2PAK (TO-263), surface mount |
| Jenis Pemasangan | Through Hole | Surface Mount |
| Configuration | Single | — |
| Technology | Avalanche-rugged power MOSFET | HEXFET (IR MOSFET) |
| Status RoHS | unknown | Compliant (Pb-free) |
| Gate Drive Recommendation | 10 V for full enhancement | — |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (Vdss) | — | 100 V |
| Continuous Drain Current (Id) at Tc=25C | — | 33 A |
| Pulsed Drain Current (Idm) | — | 110 A (per datasheet pulse curve) |
| On-Resistance Rds(on) max at Vgs=10V | — | 44 mOhm |
| Gate Threshold Voltage Vgs(th) | — | 2.0 V to 4.0 V |
| Total Gate Charge Qg | — | 47.3 nC (typical) |
| Power Dissipation (Pd) at Tc=25C | — | 130 W |
| Gambaran Suhu Operasi | — | -55 C to +175 C |
| Packaging | — | Tape & Reel (13-inch reel) |
| Avalanche Energy Rated | — | Yes (HEXFET ruggedized) |