IRF540 vs IRF540NSTRLPBF 比較
詳細並排比較 IRF540 由 STMicroelectronics 與 IRF540NSTRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF540 | IRF540NSTRLPBF |
|---|---|---|
| 品牌 | STMicroelectronics | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (VDSS) | 100 V | — |
| Continuous Drain Current (ID) | 22 A (Tc) | — |
| Power Dissipation (PD) | 85 W (Tc) | — |
| RDS(on) Typical | 0.050 Ohm | — |
| RDS(on) Maximum at 10 V Gate Drive | 77 mOhm (family typ.) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Total Gate Charge] | — |
| 工作接面溫度 | -55C to +175C | — |
| Avalanche Rating | Repetitive avalanche rated, 100% avalanche tested, data at 100C | — |
| 封裝 | TO-220 (through hole) | D2PAK (TO-263), surface mount |
| 安裝類型 | Through Hole | Surface Mount |
| Configuration | Single | — |
| Technology | Avalanche-rugged power MOSFET | HEXFET (IR MOSFET) |
| RoHS 狀態 | unknown | Compliant (Pb-free) |
| Gate Drive Recommendation | 10 V for full enhancement | — |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-Source Voltage (Vdss) | — | 100 V |
| Continuous Drain Current (Id) at Tc=25C | — | 33 A |
| Pulsed Drain Current (Idm) | — | 110 A (per datasheet pulse curve) |
| On-Resistance Rds(on) max at Vgs=10V | — | 44 mOhm |
| Gate Threshold Voltage Vgs(th) | — | 2.0 V to 4.0 V |
| Total Gate Charge Qg | — | 47.3 nC (typical) |
| Power Dissipation (Pd) at Tc=25C | — | 130 W |
| 工作溫度範圍 | — | -55 C to +175 C |
| Packaging | — | Tape & Reel (13-inch reel) |
| Avalanche Energy Rated | — | Yes (HEXFET ruggedized) |