IRFR3607TRPBF vs IRFR3504ZTRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR3607TRPBF disebabkan oleh Infineon dan IRFR3504ZTRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFR3607TRPBF IRFR3504ZTRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity / Channel Type N-Channel —
Drain-to-Source Voltage (VDS) 75 V —
Continuous Drain Current (ID, Tc) 56 A —
Calculated Die Drain Current 80 A —
On-State Resistance (RDS(on)) 9 mOhm @ VGS=10V, ID=46A —
Gate Threshold Voltage (VGS(th)) 4 V —
Total Gate Charge (Qg) 56 nC —
Gate-to-Source Voltage (VGS) Max +/-20 V —
Power Dissipation (PD, Tc) 140 W —
Thermal Resistance (RthJC) 1.0 C/W —
Gambaran Suhu Operasi -55C to +175C (TJ max 175C per datasheet convention) —
Kemasan TO-252AA (DPAK) TO-252AA (DPAK) surface mount
Jenis Pemasangan Surface Mount Surface Mount
Technology IR HEXFET (planar DMOS) HEXFET (N-Channel Silicon MOSFET)
Avalanche SOA Fully characterized —
RoHS / Lead-Free Compliant / Pb-free (PBF suffix, JESD-609 e3) —
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, TC=25°C) — 42 A
Continuous Drain Current (ID, TC=100°C) — [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulsed]
On-Resistance RDS(on) max @ VGS=10V — 9 mΩ
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th) typ) — 1.8 V (logic-level)
Total Gate Charge (Qg) typ — 30 nC
Power Dissipation (PD) at TC=25°C — 90 W
Suhu Hubungan Operasi — -55°C to +175°C
Status RoHS — Compliant
Aras MSL — 1 (unlimited)
Avalanche Rated — Yes (improved repetitive avalanche rating)

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