IRFR3607TRPBF vs IRFR3504ZTRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFR3607TRPBF sa pamamagitan ng Infineon at IRFR3504ZTRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFR3607TRPBF IRFR3504ZTRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity / Channel Type N-Channel —
Drain-to-Source Voltage (VDS) 75 V —
Continuous Drain Current (ID, Tc) 56 A —
Calculated Die Drain Current 80 A —
On-State Resistance (RDS(on)) 9 mOhm @ VGS=10V, ID=46A —
Gate Threshold Voltage (VGS(th)) 4 V —
Total Gate Charge (Qg) 56 nC —
Gate-to-Source Voltage (VGS) Max +/-20 V —
Power Dissipation (PD, Tc) 140 W —
Thermal Resistance (RthJC) 1.0 C/W —
Hanay ng Temperature na Operasyon -55C to +175C (TJ max 175C per datasheet convention) —
Packhaging TO-252AA (DPAK) TO-252AA (DPAK) surface mount
Uri ng Pagpapasok Surface Mount Surface Mount
Technology IR HEXFET (planar DMOS) HEXFET (N-Channel Silicon MOSFET)
Avalanche SOA Fully characterized —
RoHS / Lead-Free Compliant / Pb-free (PBF suffix, JESD-609 e3) —
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, TC=25°C) — 42 A
Continuous Drain Current (ID, TC=100°C) — [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulsed]
On-Resistance RDS(on) max @ VGS=10V — 9 mΩ
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th) typ) — 1.8 V (logic-level)
Total Gate Charge (Qg) typ — 30 nC
Power Dissipation (PD) at TC=25°C — 90 W
Temperature ng Junction na Operasyon — -55°C to +175°C
Tindminan RoHS — Compliant
Level ng MSL — 1 (unlimited)
Avalanche Rated — Yes (improved repetitive avalanche rating)

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