IRFR3607TRPBF vs IRFR3504ZTRPBF 比較
詳細並排比較 IRFR3607TRPBF 由 Infineon 與 IRFR3504ZTRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRFR3607TRPBF | IRFR3504ZTRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity / Channel Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 75 V | — |
| Continuous Drain Current (ID, Tc) | 56 A | — |
| Calculated Die Drain Current | 80 A | — |
| On-State Resistance (RDS(on)) | 9 mOhm @ VGS=10V, ID=46A | — |
| Gate Threshold Voltage (VGS(th)) | 4 V | — |
| Total Gate Charge (Qg) | 56 nC | — |
| Gate-to-Source Voltage (VGS) Max | +/-20 V | — |
| Power Dissipation (PD, Tc) | 140 W | — |
| Thermal Resistance (RthJC) | 1.0 C/W | — |
| 工作溫度範圍 | -55C to +175C (TJ max 175C per datasheet convention) | — |
| 封裝 | TO-252AA (DPAK) | TO-252AA (DPAK) surface mount |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | IR HEXFET (planar DMOS) | HEXFET (N-Channel Silicon MOSFET) |
| Avalanche SOA | Fully characterized | — |
| RoHS / Lead-Free | Compliant / Pb-free (PBF suffix, JESD-609 e3) | — |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, TC=25°C) | — | 42 A |
| Continuous Drain Current (ID, TC=100°C) | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulsed] |
| On-Resistance RDS(on) max @ VGS=10V | — | 9 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th) typ) | — | 1.8 V (logic-level) |
| Total Gate Charge (Qg) typ | — | 30 nC |
| Power Dissipation (PD) at TC=25°C | — | 90 W |
| 工作接面溫度 | — | -55°C to +175°C |
| RoHS 狀態 | — | Compliant |
| MSL 等級 | — | 1 (unlimited) |
| Avalanche Rated | — | Yes (improved repetitive avalanche rating) |