K4A8G085WC-BCWE vs K4A8G085WC-BIWE Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G085WC-BCWE disebabkan oleh Samsung Electronics dan K4A8G085WC-BIWE disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4A8G085WC-BCWE | K4A8G085WC-BIWE |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | In Stock | — |
| Harga Unit (USD) | $7.38 | — |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasi | 1G x 8 | 1G x 8 |
| Kadar Data | 3200 Mbps (DDR4-3200) | 3200 Mbps |
| Tegangan Pemberi Arus | 1.2 V | — |
| Suhu Operasi | 0C to +85C | — |
| Kemasan | 78FBGA | 78-FBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Antaramuka | DDR4 (parallel, double data rate) | POD-12 |
| Application Class | Computing / Embedded main memory | — |
| Manufacturer | Samsung Electronics | — |
| Bank Group Architecture | DDR4 bank groups (8n prefetch) | — |
| Speed Bin Suffix | -BCWE (DDR4-3200, commercial temp) | — |
| Status RoHS | Compliant (per JLCPCB listing) | Compliant |
| Refresh | Standard DDR4 refresh mechanisms | Auto-refresh, self-refresh |
| On-Die Termination | Yes (DDR4 ODT) | — |
| Supply Voltage (VDD) | — | 1.2 V |
| Supply Voltage (VDDQ) | — | 1.2 V |
| Gambaran Suhu Operasi | — | -40°C to +95°C |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| Latensi CAS | — | 22 (CL22) |
| Lead-Free | — | Yes |