K4A8G165WB-BCTD vs AS4C512M16D4-75BIN Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G165WB-BCTD disebabkan oleh Samsung Electronics dan AS4C512M16D4-75BIN disebabkan oleh Alliance Memory. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A8G165WB-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
K4A8G165WB-BCTD ✓ AktifAlliance Memory
AS4C512M16D4-75BIN - 8Gbit DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4-75BIN ✓ AktifPengandingan Spesifikasi
| Parametr | K4A8G165WB-BCTD | AS4C512M16D4-75BIN |
|---|---|---|
| Merek | Samsung Electronics | Alliance Memory |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organisasi | 512M x 16 | — |
| Kadar Data | 2666 Mbps | 2666 Mbps |
| Supply Voltage (VDD) | 1.2 V | — |
| Suhu Operasi | 0C to +85C | -40°C to +95°C |
| Kemasan | 96FBGA | 96-FBGA (7.5x13) |
| Die Generation | B-die | — |
| Jenis Pemasangan | Surface Mount (BGA) | Surface Mount |
| Antaramuka | DDR4 (parallel, double data rate) | POD |
| Data Mask | Supported (DM per x16 lane) | — |
| ZQ Calibration | Supported | — |
| Dynamic On-Die Termination | Supported | — |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | — |
| Refresh Rate | [DATA_NEEDED: Refresh Rate] | — |
| Status RoHS | Compliant (per JLCPCB listing: ROHS) | Compliant |
| Moisture Sensitivity Level | [DATA_NEEDED: MSL Level] | — |
| Saiz Ingatan | — | 8 Gbit |
| Memory Organization | — | 512M x 16 |
| Clock Frequency | — | 1.333 GHz |
| Access Time | — | 18 ns |
| Write Cycle Time | — | 15 ns |
| Tegangan Pemberi Arus | — | 1.2 V |
| Bilangan Pin | — | 96 |
| Ciri-ciri | — | Auto self-refresh, auto precharge, asynchronous reset, output enable, CRC, data mask, write leveling, dynamic ODT, ZQ calibration |