K4AAG165WA-BCWE vs K4AAG165WM-BCTD Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4AAG165WA-BCWE disebabkan oleh Samsung Electronics dan K4AAG165WM-BCTD disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4AAG165WA-BCWE | K4AAG165WM-BCTD |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 16 Gb (2 GB) | — |
| Memory Organization | 1G x 16 | — |
| Kadar Data | 3200 Mbps (DDR4-3200) | — |
| Tegangan Pemberi Arus | 1.2 V | 1.2 V (1.14 V to 1.26 V) |
| Kemasan | 96-ball FBGA | 96FBGA (96-ball Fine-Pitch Ball Grid Array) |
| Package Dimensions | 13 x 9 mm | — |
| Ball Pitch | 0.8 mm | — |
| Suhu Operasi | -40C to +95C | 0C to +85C |
| Jenis Antaramuka | Parallel, DDR4 | — |
| Jenis Pemasangan | Surface Mount | Surface Mount (BGA solder reflow) |
| Memory Format | DRAM (Volatile) | — |
| Technology | DDR4 SDRAM, 8n prefetch, bank group architecture | — |
| Status RoHS | Compliant | RoHS (per LCSC listing) |
| Packaging | Tray | — |
| Product Status | Active | — |
| Density | — | 16 Gb |
| Organisasi | — | 1G x 16 |
| Speed | — | 2666 Mbps |
| Antaramuka | — | SSTL-12 |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| Data Mask | — | Yes |