K4AAG165WA-BCWE vs K4AAG165WM-BCTD Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4AAG165WA-BCWE sa pamamagitan ng Samsung Electronics at K4AAG165WM-BCTD sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4AAG165WA-BCWE - 16Gb DDR4 3200Mbps SDRAM | Samsung
K4AAG165WA-BCWE ✓ NakahandaSamsung Electronics
K4AAG165WM-BCTD - 16Gb DDR4 SDRAM 2666Mbps | Samsung
K4AAG165WM-BCTD ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4AAG165WA-BCWE | K4AAG165WM-BCTD |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Laki ng Memory | 16 Gb (2 GB) | — |
| Memory Organization | 1G x 16 | — |
| Rate ng Data | 3200 Mbps (DDR4-3200) | — |
| Volte ng Pagbibigay | 1.2 V | 1.2 V (1.14 V to 1.26 V) |
| Packhaging | 96-ball FBGA | 96FBGA (96-ball Fine-Pitch Ball Grid Array) |
| Package Dimensions | 13 x 9 mm | — |
| Ball Pitch | 0.8 mm | — |
| Temperature na Operasyon | -40C to +95C | 0C to +85C |
| Uri ng Interface | Parallel, DDR4 | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount (BGA solder reflow) |
| Memory Format | DRAM (Volatile) | — |
| Technology | DDR4 SDRAM, 8n prefetch, bank group architecture | — |
| Tindminan RoHS | Compliant | RoHS (per LCSC listing) |
| Packaging | Tray | — |
| Product Status | Active | — |
| Density | — | 16 Gb |
| Organisasyon | — | 1G x 16 |
| Speed | — | 2666 Mbps |
| Interface | — | SSTL-12 |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| Data Mask | — | Yes |