K4B4G1646D-BYMA0 vs MT41K256M16TW-107 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646D-BYMA0 disebabkan oleh Samsung Electronics dan MT41K256M16TW-107 disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4B4G1646D-BYMA0 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BYMA0 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | K4B4G1646D-BYMA0 | MT41K256M16TW-107 |
|---|---|---|
| Merek | Samsung Electronics | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $14.10 |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Organisasi | 256M x 16 | 256M x 16 |
| Total Memory Size | 4 Gb | — |
| Tegangan Pemberi Arus | 1.35 V | 1.35 V |
| Kadar Data | 1866 Mbps (PC3-14900) | — |
| Kemasan | 96-ball FBGA | 96-FBGA (8x14 mm) |
| Gambaran Suhu Operasi | 0°C to +85°C | — |
| Lead-Free | Yes | — |
| Boson Bebas | Yes | — |
| RoHS Compliant | Yes | — |
| Auto Precharge | Supported | Yes |
| Asynchronous Reset | Supported | Yes |
| ZQ Calibration | Supported | Yes |
| Data Mask | Supported | Yes |
| Dynamic On-Chip Termination | Supported | — |
| Saiz Ingatan | — | 4 Gbit |
| Antaramuka | — | Parallel |
| Clock Frequency | — | 933 MHz (DDR3L-1866) |
| Access Time | — | 20 ns |
| Lebar Bus Data | — | 16 bit |
| Jenis Pemasangan | — | Surface Mount |
| Suhu Operasi | — | 0C to +95C (commercial :P grade) |
| Auto Self-Refresh | — | Yes |
| Write Leveling | — | Yes |
| Dynamic On-Die Termination | — | Yes |
| Status RoHS | — | [DATA_NEEDED: RoHS status] |
| Aras MSL | — | [DATA_NEEDED: MSL level] |