M29F200FT55M3F2 vs M29F800FT55M3E2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29F200FT55M3F2 disebabkan oleh Micron Technology dan M29F800FT55M3E2 disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
M29F200FT55M3F2 - 2Mbit 55ns 5V NOR Flash | Micron | Automotive
M29F200FT55M3F2 ✓ AktifMicron Technology
M29F800FT55M3E2 - 8Mbit 55ns 5V Parallel NOR Flash | Micron
M29F800FT55M3E2 ✓ AktifPengandingan Spesifikasi
| Parametr | M29F200FT55M3F2 | M29F800FT55M3E2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | EEPROM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | Parallel NOR Flash | NOR Flash |
| Density | 2 Mbit (2097 kbits) | 8389 kbits |
| Organisasi | 256K x 8 / 128K x 16 | 512K x 16 bit |
| Access Time | 55 ns | 55 ns |
| Supply Voltage (VCC) | 5 V | — |
| Boot Block Architecture | Top Boot Block | — |
| Programming Interface | Embedded program/erase controller, byte or word | — |
| Suhu Operasi | -40C to +125C | -40C to +125C |
| Automotive Qualification | Yes | — |
| Kemasan | 44-pin SO (TSOP) | 44-SO (SOP) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (T/R) | — |
| Number of Words (x16 mode) | 128 K | — |
| Bits per Word (x16 mode) | 16 bits | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant (E suffix) |
| Program/Erase Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Saiz Ingatan | — | 8 Mbit |
| Antaramuka | — | Parallel |
| Tegangan Pemberi Arus | — | 5 V |
| Boot Block Location | — | Top boot block |
| Program/Erase Cycles | — | 100,000 per block |
| Program Algorithm | — | Embedded byte/word program |
| Erase Features | — | Erase suspend and resume |
| Standby Mode | — | Automatic standby, low power |
| Identification | — | Electronic signature |