M29W320DT70N3E vs M29W320DB70N3E Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29W320DT70N3E disebabkan oleh Micron Technology dan M29W320DB70N3E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | M29W320DT70N3E | M29W320DB70N3E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Flash |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | NOR Flash | NOR Flash |
| Saiz Ingatan | 32 Mbit | — |
| Organisasi | 4M x8 / 2M x16 | 2M x 16 |
| Antaramuka | Parallel | Parallel |
| Access Time | 70 ns | 70 ns |
| Supply Voltage (VCC) | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| Read Current (typical) | 10 mA | — |
| Boot Block Architecture | Top boot (DT suffix) | — |
| Boot Region | 16 KByte boot block, two 8 KByte parameter blocks, 32 KByte small main block | — |
| Kemasan | 48-TSOP I | 48-TSOP I |
| Package Length | 18.4 mm | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | 3 (168 Hours) | — |
| Peak Reflow Temperature Time | 30 s | — |
| Packaging | Tray | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Program/Erase Cycles | [DATA_NEEDED: endurance] | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | ROHS3 Compliant |
| Density | — | 32 Mbit (33554 kbits) |
| Number of Words | — | 2000 k |
| Bits per Word | — | 16 bits |
| VPP Fast Program Voltage | — | 12 V (optional) |
| Block Architecture | — | Non-uniform parameter blocks, boot block (bottom boot, DB type) |
| Programming Mode | — | Single VCC program/erase; automatic program/erase with status polling |
| Power-Up Mode | — | Read mode (default) |