M29W320DT70N3E vs M29W320DB70N3E 比較
詳細並排比較 M29W320DT70N3E 由 Micron Technology 與 M29W320DB70N3E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | M29W320DT70N3E | M29W320DB70N3E |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | Flash |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | NOR Flash | NOR Flash |
| 記憶體容量 | 32 Mbit | — |
| 組織 | 4M x8 / 2M x16 | 2M x 16 |
| 介面 | Parallel | Parallel |
| Access Time | 70 ns | 70 ns |
| Supply Voltage (VCC) | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| Read Current (typical) | 10 mA | — |
| Boot Block Architecture | Top boot (DT suffix) | — |
| Boot Region | 16 KByte boot block, two 8 KByte parameter blocks, 32 KByte small main block | — |
| 封裝 | 48-TSOP I | 48-TSOP I |
| Package Length | 18.4 mm | — |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | 3 (168 Hours) | — |
| Peak Reflow Temperature Time | 30 s | — |
| Packaging | Tray | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Program/Erase Cycles | [DATA_NEEDED: endurance] | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | ROHS3 Compliant |
| Density | — | 32 Mbit (33554 kbits) |
| Number of Words | — | 2000 k |
| Bits per Word | — | 16 bits |
| VPP Fast Program Voltage | — | 12 V (optional) |
| Block Architecture | — | Non-uniform parameter blocks, boot block (bottom boot, DB type) |
| Programming Mode | — | Single VCC program/erase; automatic program/erase with status polling |
| Power-Up Mode | — | Read mode (default) |